Details
| Original language | English |
|---|---|
| Article number | 7452343 |
| Pages (from-to) | 783-790 |
| Number of pages | 8 |
| Journal | IEEE journal of photovoltaics |
| Volume | 6 |
| Issue number | 3 |
| Early online date | 13 Apr 2016 |
| Publication status | Published - May 2016 |
Abstract
The reuse of the silicon substrate is a key component in the kerfless-porous-silicon-based wafering process. Starting with a boron-doped p+-type substrate, a porous double layer is created, reorganized in a hydrogen bake, and then serves as a substrate for silicon homoepitaxy. After lift-off, the silicon substrate is wet chemically reconditioned and reporosified to serve again as a substrate for epitaxial layer deposition. We reduce the substrate consumption per cycle to 5 ± 0.3 μm/side and demonstrate 14 uses on a 6-in wafer. We investigate the impact of the reuse sequence on the epitaxial layer quality by carrier lifetime measurements. Starting with the third reuse, a pattern becomes visible in lifetime mappings. We observe a degradation of the minority carrier lifetime from 15 to 7 μs after 13 reuses.
Keywords
- Carrier lifetime, epitaxial layer, layer transfer, porous silicon (PSI) process, Substrate reuse
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Electrical and Electronic Engineering
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In: IEEE journal of photovoltaics, Vol. 6, No. 3, 7452343, 05.2016, p. 783-790.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Reuse of Substrate Wafers for the Porous Silicon Layer Transfer
AU - Steckenreiter, Verena
AU - Hensen, Jan
AU - Knorr, Alwina
AU - Kajari-Schroder, Sarah
AU - Brendel, Rolf
N1 - Acknowledgements: The authors would like to thank A. Albu and Dr. W. Appel at IMS CHIPS for epitaxial depositions. They would also like to thank Dr. B. Lim for valuable help with the boron–oxygen analysis and Dr. R. Niepelt for the profilometric mappings. Furthermore, they would like to thank Dr. E. Garralaga Rojas, Dr. F. Haase, M. Nese, Dr. D. Nilsen Wright, and Dr. A. Bentzen for fruitful discussions.
PY - 2016/5
Y1 - 2016/5
N2 - The reuse of the silicon substrate is a key component in the kerfless-porous-silicon-based wafering process. Starting with a boron-doped p+-type substrate, a porous double layer is created, reorganized in a hydrogen bake, and then serves as a substrate for silicon homoepitaxy. After lift-off, the silicon substrate is wet chemically reconditioned and reporosified to serve again as a substrate for epitaxial layer deposition. We reduce the substrate consumption per cycle to 5 ± 0.3 μm/side and demonstrate 14 uses on a 6-in wafer. We investigate the impact of the reuse sequence on the epitaxial layer quality by carrier lifetime measurements. Starting with the third reuse, a pattern becomes visible in lifetime mappings. We observe a degradation of the minority carrier lifetime from 15 to 7 μs after 13 reuses.
AB - The reuse of the silicon substrate is a key component in the kerfless-porous-silicon-based wafering process. Starting with a boron-doped p+-type substrate, a porous double layer is created, reorganized in a hydrogen bake, and then serves as a substrate for silicon homoepitaxy. After lift-off, the silicon substrate is wet chemically reconditioned and reporosified to serve again as a substrate for epitaxial layer deposition. We reduce the substrate consumption per cycle to 5 ± 0.3 μm/side and demonstrate 14 uses on a 6-in wafer. We investigate the impact of the reuse sequence on the epitaxial layer quality by carrier lifetime measurements. Starting with the third reuse, a pattern becomes visible in lifetime mappings. We observe a degradation of the minority carrier lifetime from 15 to 7 μs after 13 reuses.
KW - Carrier lifetime
KW - epitaxial layer
KW - layer transfer
KW - porous silicon (PSI) process
KW - Substrate reuse
UR - http://www.scopus.com/inward/record.url?scp=84979724287&partnerID=8YFLogxK
U2 - 10.1109/JPHOTOV.2016.2545406
DO - 10.1109/JPHOTOV.2016.2545406
M3 - Article
AN - SCOPUS:84979724287
VL - 6
SP - 783
EP - 790
JO - IEEE journal of photovoltaics
JF - IEEE journal of photovoltaics
SN - 2156-3381
IS - 3
M1 - 7452343
ER -