Resonant tunneling diodes made up of stacked self-assembled Ge/Si islands

Research output: Contribution to journalArticleResearchpeer review

Authors

  • O. G. Schmidt
  • U. Denker
  • K. Eberl
  • O. Kienzle
  • F. Ernst
  • R. J. Haug

Research Organisations

External Research Organisations

  • Max Planck Institute for Solid State Research (MPI-FKF)
  • Max Planck Institute for Intelligent Systems
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Details

Original languageEnglish
Pages (from-to)4341-4343
Number of pages3
JournalApplied Physics Letters
Volume77
Issue number26
Publication statusPublished - 19 Dec 2000

Abstract

Multiple layers of self-assembled Ge/Si islands are used for resonant tunneling diodes (RTDs). The extremely closely stacked Ge nanostructures form vertical channels with energetically deep thermalization layers and high Si double barriers. Two resonances are found in the RTD current-voltage curve, which are attributed to the heavy-heavy hole (hh) and heavy-light hole (lh) transition. The lh resonance shows negative differential resistance up to 50 K. With increasing magnetic field, the lh resonance slightly shifts to higher voltages.

ASJC Scopus subject areas

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Resonant tunneling diodes made up of stacked self-assembled Ge/Si islands. / Schmidt, O. G.; Denker, U.; Eberl, K. et al.
In: Applied Physics Letters, Vol. 77, No. 26, 19.12.2000, p. 4341-4343.

Research output: Contribution to journalArticleResearchpeer review

Schmidt OG, Denker U, Eberl K, Kienzle O, Ernst F, Haug RJ. Resonant tunneling diodes made up of stacked self-assembled Ge/Si islands. Applied Physics Letters. 2000 Dec 19;77(26):4341-4343. doi: 10.1063/1.1332817, 10.15488/2828
Schmidt, O. G. ; Denker, U. ; Eberl, K. et al. / Resonant tunneling diodes made up of stacked self-assembled Ge/Si islands. In: Applied Physics Letters. 2000 ; Vol. 77, No. 26. pp. 4341-4343.
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