Details
| Original language | English |
|---|---|
| Title of host publication | Proceedings of the 8th International Symposium Nanostructures |
| Subtitle of host publication | Physics and Technology |
| Editors | Zh. alferov, L. Esaki, ZH. Alferov, L. Esaki |
| Pages | 487-490 |
| Number of pages | 4 |
| Publication status | Published - 1 Dec 2000 |
| Event | 8th International Symposium Nanostructures: Physics and Technology - St. Petersburg, Russian Federation Duration: 19 Jun 2000 → 23 Jun 2000 |
Publication series
| Name | Proceedings of the 8th International Symposium Nanostructures: Physics and Technology |
|---|
Abstract
We present a new concept and first results of resonant tunneling diodes based on self-assembled Ge/Si islands. The proposed structure consists of closely stacked and vertically aligned Ge islands which create vertical channels with energetically deep thermalization layers and high Si double barriers for holes in the valence band. The current-voltage (I-V) curve of such a layer sequence shows two resonances which we attribute to the heavy-heavy hole and heavy-light hole (lh) transition. The lh resonance is pronounced and negative differential resistence is conserved up to over 45 K. Magnetic field dependence of the resonances suggest that the tunneling current through the structure is of 2-dimensional character.
ASJC Scopus subject areas
- Engineering(all)
- General Engineering
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Proceedings of the 8th International Symposium Nanostructures: Physics and Technology. ed. / Zh. alferov; L. Esaki; ZH. Alferov; L. Esaki. 2000. p. 487-490 (Proceedings of the 8th International Symposium Nanostructures: Physics and Technology).
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - Resonant tunneling diodes based on stacked self-assembled Ge/Si islands
AU - Schmidtt, O. G.
AU - Denker, U.
AU - Kienzle, O.
AU - Ernst, F.
AU - Haug, R. J.
AU - Eberl, K.
PY - 2000/12/1
Y1 - 2000/12/1
N2 - We present a new concept and first results of resonant tunneling diodes based on self-assembled Ge/Si islands. The proposed structure consists of closely stacked and vertically aligned Ge islands which create vertical channels with energetically deep thermalization layers and high Si double barriers for holes in the valence band. The current-voltage (I-V) curve of such a layer sequence shows two resonances which we attribute to the heavy-heavy hole and heavy-light hole (lh) transition. The lh resonance is pronounced and negative differential resistence is conserved up to over 45 K. Magnetic field dependence of the resonances suggest that the tunneling current through the structure is of 2-dimensional character.
AB - We present a new concept and first results of resonant tunneling diodes based on self-assembled Ge/Si islands. The proposed structure consists of closely stacked and vertically aligned Ge islands which create vertical channels with energetically deep thermalization layers and high Si double barriers for holes in the valence band. The current-voltage (I-V) curve of such a layer sequence shows two resonances which we attribute to the heavy-heavy hole and heavy-light hole (lh) transition. The lh resonance is pronounced and negative differential resistence is conserved up to over 45 K. Magnetic field dependence of the resonances suggest that the tunneling current through the structure is of 2-dimensional character.
UR - http://www.scopus.com/inward/record.url?scp=0034594211&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:0034594211
SN - 5936340023
T3 - Proceedings of the 8th International Symposium Nanostructures: Physics and Technology
SP - 487
EP - 490
BT - Proceedings of the 8th International Symposium Nanostructures
A2 - alferov, Zh.
A2 - Esaki, L.
A2 - Alferov, ZH.
A2 - Esaki, L.
T2 - 8th International Symposium Nanostructures: Physics and Technology
Y2 - 19 June 2000 through 23 June 2000
ER -