Details
| Original language | English |
|---|---|
| Pages (from-to) | 338-340 |
| Number of pages | 3 |
| Journal | Physica B: Condensed Matter |
| Volume | 272 |
| Issue number | 1-4 |
| Publication status | Published - 17 Dec 1999 |
| Externally published | Yes |
| Event | 1999 11th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-11) - Kyoto, Jpn Duration: 19 Jul 1999 → 23 Jul 1999 |
Abstract
First, we measure the coherence time of optically oriented carrier spins in wide gap quantum wells and observe an increase with temperature from less than 10 ps at 20 K to 500 ps at 200 K. Second, we measure the temperature dependence of the momentum relaxation time by four wave mixing and absorption experiments. The spin relaxation time is approximately proportional to the inverse of the momentum relaxation time. In the low-temperature regime, the strong increase of spin lifetime can be caused by motional narrowing due to the faster scattering of excitons with increasing temperature. In the high-temperature regime, quenching of the electron-hole spin flip dephasing due to an increasing ionization of excitons with increasing temperatures can prolongate spin lifetime.
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Electrical and Electronic Engineering
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In: Physica B: Condensed Matter, Vol. 272, No. 1-4, 17.12.1999, p. 338-340.
Research output: Contribution to journal › Conference article › Research › peer review
}
TY - JOUR
T1 - Relation between spin and momentum relaxation in ZnSe/ZnMgSSe quantum wells
AU - Hägele, D.
AU - Oestreich, Michael
AU - Rühle, W. W.
AU - Hoffmann, J.
AU - Wachter, S.
AU - Kalt, H.
AU - Ohkawa, K.
AU - Hommel, D.
PY - 1999/12/17
Y1 - 1999/12/17
N2 - First, we measure the coherence time of optically oriented carrier spins in wide gap quantum wells and observe an increase with temperature from less than 10 ps at 20 K to 500 ps at 200 K. Second, we measure the temperature dependence of the momentum relaxation time by four wave mixing and absorption experiments. The spin relaxation time is approximately proportional to the inverse of the momentum relaxation time. In the low-temperature regime, the strong increase of spin lifetime can be caused by motional narrowing due to the faster scattering of excitons with increasing temperature. In the high-temperature regime, quenching of the electron-hole spin flip dephasing due to an increasing ionization of excitons with increasing temperatures can prolongate spin lifetime.
AB - First, we measure the coherence time of optically oriented carrier spins in wide gap quantum wells and observe an increase with temperature from less than 10 ps at 20 K to 500 ps at 200 K. Second, we measure the temperature dependence of the momentum relaxation time by four wave mixing and absorption experiments. The spin relaxation time is approximately proportional to the inverse of the momentum relaxation time. In the low-temperature regime, the strong increase of spin lifetime can be caused by motional narrowing due to the faster scattering of excitons with increasing temperature. In the high-temperature regime, quenching of the electron-hole spin flip dephasing due to an increasing ionization of excitons with increasing temperatures can prolongate spin lifetime.
UR - http://www.scopus.com/inward/record.url?scp=0343081465&partnerID=8YFLogxK
U2 - 10.1016/S0921-4526(99)00300-2
DO - 10.1016/S0921-4526(99)00300-2
M3 - Conference article
AN - SCOPUS:0343081465
VL - 272
SP - 338
EP - 340
JO - Physica B: Condensed Matter
JF - Physica B: Condensed Matter
SN - 0921-4526
IS - 1-4
T2 - 1999 11th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-11)
Y2 - 19 July 1999 through 23 July 1999
ER -