Reduction of interfacial carbon and boron contamination as sources for degradation of epitaxial SiGe layers grown by MBE

Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review

Authors

  • H. P. Zeindl
  • G. Lippert
  • J. Drews
  • R. Kurps
  • H. J. Osten

External Research Organisations

  • Leibniz Institute for High Performance Microelectronics (IHP)
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Details

Original languageEnglish
Title of host publicationGettering and Defect Engineering in Semiconductor Technology, GADEST 93
EditorsH.G. Grimmeiss, M. Kittler, H. Richter
Pages117-122
Number of pages6
Publication statusPublished - Dec 1993
Externally publishedYes
Event5th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology, GADEST 1993 - Chossewitz, Frankfurt (Oder), Germany
Duration: 9 Oct 1993 → 14 Oct 1993

Publication series

NameSolid State Phenomena
Volume32-33
ISSN (Print)1012-0394
ISSN (electronic)1662-9779

Abstract

In order to grow high quality epitaxial MBE layers, substrates with atomically clean surfaces are required. In this paper we investigated the effectiveness of different wet chemical ex-situ cleaning procedures and an UV/ozone in-situ method on the reduction of interfacial boron and carbon contamination. The carbon desorption was monitored in-situ by XPS. The UV/ozone cleaning reduces the carbon concentration below the detection limit of XPS. Cleaned wafers were coated with silicon and the capped interface was characterized ex-situ by SIMS. By growth interruption the recontamination of an epitaxial layer in ultra high vacuum was investigated. No additional carbon could be detected by SIMS after a growth interruption of 2 hours.

ASJC Scopus subject areas

Cite this

Reduction of interfacial carbon and boron contamination as sources for degradation of epitaxial SiGe layers grown by MBE. / Zeindl, H. P.; Lippert, G.; Drews, J. et al.
Gettering and Defect Engineering in Semiconductor Technology, GADEST 93. ed. / H.G. Grimmeiss; M. Kittler; H. Richter. 1993. p. 117-122 (Solid State Phenomena; Vol. 32-33).

Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review

Zeindl, HP, Lippert, G, Drews, J, Kurps, R & Osten, HJ 1993, Reduction of interfacial carbon and boron contamination as sources for degradation of epitaxial SiGe layers grown by MBE. in HG Grimmeiss, M Kittler & H Richter (eds), Gettering and Defect Engineering in Semiconductor Technology, GADEST 93. Solid State Phenomena, vol. 32-33, pp. 117-122, 5th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology, GADEST 1993, Chossewitz, Frankfurt (Oder), Germany, 9 Oct 1993. https://doi.org/10.4028/www.scientific.net/SSP.32-33.117
Zeindl, H. P., Lippert, G., Drews, J., Kurps, R., & Osten, H. J. (1993). Reduction of interfacial carbon and boron contamination as sources for degradation of epitaxial SiGe layers grown by MBE. In H. G. Grimmeiss, M. Kittler, & H. Richter (Eds.), Gettering and Defect Engineering in Semiconductor Technology, GADEST 93 (pp. 117-122). (Solid State Phenomena; Vol. 32-33). https://doi.org/10.4028/www.scientific.net/SSP.32-33.117
Zeindl HP, Lippert G, Drews J, Kurps R, Osten HJ. Reduction of interfacial carbon and boron contamination as sources for degradation of epitaxial SiGe layers grown by MBE. In Grimmeiss HG, Kittler M, Richter H, editors, Gettering and Defect Engineering in Semiconductor Technology, GADEST 93. 1993. p. 117-122. (Solid State Phenomena). doi: 10.4028/www.scientific.net/SSP.32-33.117
Zeindl, H. P. ; Lippert, G. ; Drews, J. et al. / Reduction of interfacial carbon and boron contamination as sources for degradation of epitaxial SiGe layers grown by MBE. Gettering and Defect Engineering in Semiconductor Technology, GADEST 93. editor / H.G. Grimmeiss ; M. Kittler ; H. Richter. 1993. pp. 117-122 (Solid State Phenomena).
Download
@inproceedings{a0a0c2162b704a188fbd00aea5f2b174,
title = "Reduction of interfacial carbon and boron contamination as sources for degradation of epitaxial SiGe layers grown by MBE",
abstract = "In order to grow high quality epitaxial MBE layers, substrates with atomically clean surfaces are required. In this paper we investigated the effectiveness of different wet chemical ex-situ cleaning procedures and an UV/ozone in-situ method on the reduction of interfacial boron and carbon contamination. The carbon desorption was monitored in-situ by XPS. The UV/ozone cleaning reduces the carbon concentration below the detection limit of XPS. Cleaned wafers were coated with silicon and the capped interface was characterized ex-situ by SIMS. By growth interruption the recontamination of an epitaxial layer in ultra high vacuum was investigated. No additional carbon could be detected by SIMS after a growth interruption of 2 hours.",
author = "Zeindl, {H. P.} and G. Lippert and J. Drews and R. Kurps and Osten, {H. J.}",
year = "1993",
month = dec,
doi = "10.4028/www.scientific.net/SSP.32-33.117",
language = "English",
isbn = "9783908450009",
series = "Solid State Phenomena",
pages = "117--122",
editor = "H.G. Grimmeiss and M. Kittler and H. Richter",
booktitle = "Gettering and Defect Engineering in Semiconductor Technology, GADEST 93",
note = "5th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology, GADEST 1993 ; Conference date: 09-10-1993 Through 14-10-1993",

}

Download

TY - GEN

T1 - Reduction of interfacial carbon and boron contamination as sources for degradation of epitaxial SiGe layers grown by MBE

AU - Zeindl, H. P.

AU - Lippert, G.

AU - Drews, J.

AU - Kurps, R.

AU - Osten, H. J.

PY - 1993/12

Y1 - 1993/12

N2 - In order to grow high quality epitaxial MBE layers, substrates with atomically clean surfaces are required. In this paper we investigated the effectiveness of different wet chemical ex-situ cleaning procedures and an UV/ozone in-situ method on the reduction of interfacial boron and carbon contamination. The carbon desorption was monitored in-situ by XPS. The UV/ozone cleaning reduces the carbon concentration below the detection limit of XPS. Cleaned wafers were coated with silicon and the capped interface was characterized ex-situ by SIMS. By growth interruption the recontamination of an epitaxial layer in ultra high vacuum was investigated. No additional carbon could be detected by SIMS after a growth interruption of 2 hours.

AB - In order to grow high quality epitaxial MBE layers, substrates with atomically clean surfaces are required. In this paper we investigated the effectiveness of different wet chemical ex-situ cleaning procedures and an UV/ozone in-situ method on the reduction of interfacial boron and carbon contamination. The carbon desorption was monitored in-situ by XPS. The UV/ozone cleaning reduces the carbon concentration below the detection limit of XPS. Cleaned wafers were coated with silicon and the capped interface was characterized ex-situ by SIMS. By growth interruption the recontamination of an epitaxial layer in ultra high vacuum was investigated. No additional carbon could be detected by SIMS after a growth interruption of 2 hours.

UR - http://www.scopus.com/inward/record.url?scp=84955113887&partnerID=8YFLogxK

U2 - 10.4028/www.scientific.net/SSP.32-33.117

DO - 10.4028/www.scientific.net/SSP.32-33.117

M3 - Conference contribution

AN - SCOPUS:84955113887

SN - 9783908450009

T3 - Solid State Phenomena

SP - 117

EP - 122

BT - Gettering and Defect Engineering in Semiconductor Technology, GADEST 93

A2 - Grimmeiss, H.G.

A2 - Kittler, M.

A2 - Richter, H.

T2 - 5th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology, GADEST 1993

Y2 - 9 October 1993 through 14 October 1993

ER -