Reducing UV induced degradation losses of solar modules with c-Si solar cells featuring dielectric passivation layers

Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review

Authors

  • Robert Witteck
  • Henning Schulte-Huxel
  • Boris Veith-Wolf
  • Malte Ruben Vogt
  • Fabian Kiefer
  • Marc Köntges
  • Robby Peibst
  • Rolf Brendel

Research Organisations

External Research Organisations

  • Institute for Solar Energy Research (ISFH)
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Details

Original languageEnglish
Title of host publication2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1366-1370
Number of pages5
ISBN (electronic)978-1-5090-5605-7
ISBN (print)978-1-5090-5606-4
Publication statusPublished - 2017
Event44th IEEE Photovoltaic Specialist Conference, PVSC 2017 - Washington, United States
Duration: 25 Jun 2017 → 30 Jun 2017

Abstract

We report on the stability of the c-Si surface passivation quality by aluminum oxide (AIOx), silicon nitride (SiNy), and AlOx/SiNy, stacks under UV illumination. Low-temperature annealed AlOx shows a weak degradation during UV illumination, with surface recombination velocities (SRVs) of 25 cm/s after a UV dose of 275 kWh/m2. This degradation is less pronounced compared to that of fired SiNy layers with an SRV of 117 cm/s. After a firing step, the AlOx layer show even an improvement during UV illumination, resulting in stabilized SRVs of down to 1 cm/s. The improvement is mainly due to an increase of the negative fixed charge density in the AlOx layer up to a large value of -1.2×1013 cm-2.

Keywords

    Aluminum oxide, Carrier lifetime, Crystalline silicon, Degradation, Silicon nitride, Surface passivation, UV stability

ASJC Scopus subject areas

Sustainable Development Goals

Cite this

Reducing UV induced degradation losses of solar modules with c-Si solar cells featuring dielectric passivation layers. / Witteck, Robert; Schulte-Huxel, Henning; Veith-Wolf, Boris et al.
2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 1366-1370.

Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review

Witteck, R, Schulte-Huxel, H, Veith-Wolf, B, Vogt, MR, Kiefer, F, Köntges, M, Peibst, R & Brendel, R 2017, Reducing UV induced degradation losses of solar modules with c-Si solar cells featuring dielectric passivation layers. in 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., pp. 1366-1370, 44th IEEE Photovoltaic Specialist Conference, PVSC 2017, Washington, United States, 25 Jun 2017. https://doi.org/10.1109/PVSC.2017.8366019
Witteck, R., Schulte-Huxel, H., Veith-Wolf, B., Vogt, M. R., Kiefer, F., Köntges, M., Peibst, R., & Brendel, R. (2017). Reducing UV induced degradation losses of solar modules with c-Si solar cells featuring dielectric passivation layers. In 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017 (pp. 1366-1370). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2017.8366019
Witteck R, Schulte-Huxel H, Veith-Wolf B, Vogt MR, Kiefer F, Köntges M et al. Reducing UV induced degradation losses of solar modules with c-Si solar cells featuring dielectric passivation layers. In 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc. 2017. p. 1366-1370 doi: 10.1109/PVSC.2017.8366019
Witteck, Robert ; Schulte-Huxel, Henning ; Veith-Wolf, Boris et al. / Reducing UV induced degradation losses of solar modules with c-Si solar cells featuring dielectric passivation layers. 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 1366-1370
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title = "Reducing UV induced degradation losses of solar modules with c-Si solar cells featuring dielectric passivation layers",
abstract = "We report on the stability of the c-Si surface passivation quality by aluminum oxide (AIOx), silicon nitride (SiNy), and AlOx/SiNy, stacks under UV illumination. Low-temperature annealed AlOx shows a weak degradation during UV illumination, with surface recombination velocities (SRVs) of 25 cm/s after a UV dose of 275 kWh/m2. This degradation is less pronounced compared to that of fired SiNy layers with an SRV of 117 cm/s. After a firing step, the AlOx layer show even an improvement during UV illumination, resulting in stabilized SRVs of down to 1 cm/s. The improvement is mainly due to an increase of the negative fixed charge density in the AlOx layer up to a large value of -1.2×1013 cm-2.",
keywords = "Aluminum oxide, Carrier lifetime, Crystalline silicon, Degradation, Silicon nitride, Surface passivation, UV stability",
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AU - Witteck, Robert

AU - Schulte-Huxel, Henning

AU - Veith-Wolf, Boris

AU - Vogt, Malte Ruben

AU - Kiefer, Fabian

AU - Köntges, Marc

AU - Peibst, Robby

AU - Brendel, Rolf

N1 - Publisher Copyright: © 2017 IEEE.

PY - 2017

Y1 - 2017

N2 - We report on the stability of the c-Si surface passivation quality by aluminum oxide (AIOx), silicon nitride (SiNy), and AlOx/SiNy, stacks under UV illumination. Low-temperature annealed AlOx shows a weak degradation during UV illumination, with surface recombination velocities (SRVs) of 25 cm/s after a UV dose of 275 kWh/m2. This degradation is less pronounced compared to that of fired SiNy layers with an SRV of 117 cm/s. After a firing step, the AlOx layer show even an improvement during UV illumination, resulting in stabilized SRVs of down to 1 cm/s. The improvement is mainly due to an increase of the negative fixed charge density in the AlOx layer up to a large value of -1.2×1013 cm-2.

AB - We report on the stability of the c-Si surface passivation quality by aluminum oxide (AIOx), silicon nitride (SiNy), and AlOx/SiNy, stacks under UV illumination. Low-temperature annealed AlOx shows a weak degradation during UV illumination, with surface recombination velocities (SRVs) of 25 cm/s after a UV dose of 275 kWh/m2. This degradation is less pronounced compared to that of fired SiNy layers with an SRV of 117 cm/s. After a firing step, the AlOx layer show even an improvement during UV illumination, resulting in stabilized SRVs of down to 1 cm/s. The improvement is mainly due to an increase of the negative fixed charge density in the AlOx layer up to a large value of -1.2×1013 cm-2.

KW - Aluminum oxide

KW - Carrier lifetime

KW - Crystalline silicon

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