Details
| Original language | English |
|---|---|
| Pages (from-to) | 25-30 |
| Number of pages | 6 |
| Journal | CARBON |
| Volume | 130 |
| Publication status | Published - Apr 2018 |
| Externally published | Yes |
Abstract
The chemical nature of the chemical mechanical polishing of diamond has been examined by adding various redox agents to an alkaline SF1 polishing slurry. Three oxidizing agents, namely hydrogen peroxide, potassium permanganate and ferric nitrate, and two reducing agents, oxalic acid and sodium thiosulfate, were added to the SF1 slurry. Oxalic acid produced the fastest polishing rate while hydrogen peroxide had very little effect on polishing, probably due to its volatile nature. X-ray photoelectron spectroscopy (XPS) reveals little difference in the surface oxygen content on thesamples polished using various slurries. This suggests that the addition of redox agents do not increase the density of oxygen containing species on the surface but accelerate the process of attachment and removal of Si or O atoms within the slurry particles to the diamond surface.
Keywords
- Chemical mechanical polishing, Diamond
ASJC Scopus subject areas
- Chemistry(all)
- General Chemistry
- Materials Science(all)
- General Materials Science
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In: CARBON, Vol. 130, 04.2018, p. 25-30.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Redox agent enhanced chemical mechanical polishing of thin film diamond
AU - Mandal, Soumen
AU - Thomas, Evan L.H.
AU - Gines, Laia
AU - Morgan, David
AU - Green, Joshua
AU - Brousseau, Emmanuel B.
AU - Williams, Oliver A.
N1 - Publisher Copyright: © 2018 Elsevier Ltd
PY - 2018/4
Y1 - 2018/4
N2 - The chemical nature of the chemical mechanical polishing of diamond has been examined by adding various redox agents to an alkaline SF1 polishing slurry. Three oxidizing agents, namely hydrogen peroxide, potassium permanganate and ferric nitrate, and two reducing agents, oxalic acid and sodium thiosulfate, were added to the SF1 slurry. Oxalic acid produced the fastest polishing rate while hydrogen peroxide had very little effect on polishing, probably due to its volatile nature. X-ray photoelectron spectroscopy (XPS) reveals little difference in the surface oxygen content on thesamples polished using various slurries. This suggests that the addition of redox agents do not increase the density of oxygen containing species on the surface but accelerate the process of attachment and removal of Si or O atoms within the slurry particles to the diamond surface.
AB - The chemical nature of the chemical mechanical polishing of diamond has been examined by adding various redox agents to an alkaline SF1 polishing slurry. Three oxidizing agents, namely hydrogen peroxide, potassium permanganate and ferric nitrate, and two reducing agents, oxalic acid and sodium thiosulfate, were added to the SF1 slurry. Oxalic acid produced the fastest polishing rate while hydrogen peroxide had very little effect on polishing, probably due to its volatile nature. X-ray photoelectron spectroscopy (XPS) reveals little difference in the surface oxygen content on thesamples polished using various slurries. This suggests that the addition of redox agents do not increase the density of oxygen containing species on the surface but accelerate the process of attachment and removal of Si or O atoms within the slurry particles to the diamond surface.
KW - Chemical mechanical polishing
KW - Diamond
UR - http://www.scopus.com/inward/record.url?scp=85040000512&partnerID=8YFLogxK
U2 - 10.1016/j.carbon.2017.12.077
DO - 10.1016/j.carbon.2017.12.077
M3 - Article
VL - 130
SP - 25
EP - 30
JO - CARBON
JF - CARBON
SN - 0008-6223
ER -