Details
| Original language | English |
|---|---|
| Article number | 093707 |
| Journal | Journal of applied physics |
| Volume | 106 |
| Issue number | 9 |
| Early online date | 10 Nov 2009 |
| Publication status | Published - 2009 |
| Externally published | Yes |
Abstract
We show that the recombination lifetimes measured in highly aluminum-doped p -type silicon (Al- p+) regions, fabricated by means of screen printing and firing of aluminum paste, are three orders of magnitude larger than the lifetimes expected from the extrapolation of the lifetime data measured on aluminum-doped Czochralski-grown silicon wafers. Solar cell simulations demonstrate that the lifetime of 130 ns measured in Al- p+ regions with an aluminum doping concentration of ∼2× 1018 cm -3 enables solar cell open-circuit voltages of 670 mV and energy conversion efficiencies of 21% on n -type silicon wafers. These results prove that the efficiency potential of screen-printed Al- p+ emitters for the application to rear-junction n -type silicon solar cells is much higher than traditionally assumed.
ASJC Scopus subject areas
- Physics and Astronomy(all)
- General Physics and Astronomy
Cite this
- Standard
- Harvard
- Apa
- Vancouver
- BibTeX
- RIS
In: Journal of applied physics, Vol. 106, No. 9, 093707, 2009.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Recombination lifetimes in highly aluminum-doped silicon
AU - Schmidt, Jan
AU - Thiemann, Nils
AU - Bock, Robert
AU - Brendel, Rolf
N1 - Funding Information: Funding was provided by the State of Lower Saxony and the German Ministry for the Environment, Nature Conserva- tion and Nuclear Safety (BMU) under Contract No. 0327666 (ALU+).
PY - 2009
Y1 - 2009
N2 - We show that the recombination lifetimes measured in highly aluminum-doped p -type silicon (Al- p+) regions, fabricated by means of screen printing and firing of aluminum paste, are three orders of magnitude larger than the lifetimes expected from the extrapolation of the lifetime data measured on aluminum-doped Czochralski-grown silicon wafers. Solar cell simulations demonstrate that the lifetime of 130 ns measured in Al- p+ regions with an aluminum doping concentration of ∼2× 1018 cm -3 enables solar cell open-circuit voltages of 670 mV and energy conversion efficiencies of 21% on n -type silicon wafers. These results prove that the efficiency potential of screen-printed Al- p+ emitters for the application to rear-junction n -type silicon solar cells is much higher than traditionally assumed.
AB - We show that the recombination lifetimes measured in highly aluminum-doped p -type silicon (Al- p+) regions, fabricated by means of screen printing and firing of aluminum paste, are three orders of magnitude larger than the lifetimes expected from the extrapolation of the lifetime data measured on aluminum-doped Czochralski-grown silicon wafers. Solar cell simulations demonstrate that the lifetime of 130 ns measured in Al- p+ regions with an aluminum doping concentration of ∼2× 1018 cm -3 enables solar cell open-circuit voltages of 670 mV and energy conversion efficiencies of 21% on n -type silicon wafers. These results prove that the efficiency potential of screen-printed Al- p+ emitters for the application to rear-junction n -type silicon solar cells is much higher than traditionally assumed.
UR - http://www.scopus.com/inward/record.url?scp=70450227192&partnerID=8YFLogxK
U2 - 10.1063/1.3253742
DO - 10.1063/1.3253742
M3 - Article
AN - SCOPUS:70450227192
VL - 106
JO - Journal of applied physics
JF - Journal of applied physics
SN - 0021-8979
IS - 9
M1 - 093707
ER -