Details
| Original language | English |
|---|---|
| Pages (from-to) | 85-91 |
| Number of pages | 7 |
| Journal | Solar Energy Materials and Solar Cells |
| Volume | 131 |
| Publication status | Published - Dec 2014 |
Abstract
We present an investigation of the electrical characteristics - recombination and contact resistance - of poly-crystalline (poly) Si/mono-crystalline (c) Si junctions and of the influence of the interfacial oxide between the poly-Si and the c-Si on these characteristics. In particular, we compare thermally grown oxides with different thickness values with wet chemically grown oxides. Both n- and p-type poly-Si emitters are investigated. For one combination (n-type poly-Si, thermal oxide), we compare planar and textured surfaces. For all oxide types investigated, we achieve combinations of low recombination current densities <20 fA/cm2 and low specific contact resistances <0.1 ω cm2. The corresponding implied open-circuit voltages measured on our test structures are 732 mV (n-type poly-Si) and 711 mV (p-type poly-Si). By applying these poly-Si layers on a solar cell structure, we achieve an open-circuit voltage of 714 mV and a series resistance of 0.6 ω cm2.
Keywords
- Passivated contact, Passivation, Polysilicon, Silicon solar cell, Tunnel oxide
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Energy(all)
- Renewable Energy, Sustainability and the Environment
- Materials Science(all)
- Surfaces, Coatings and Films
Sustainable Development Goals
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In: Solar Energy Materials and Solar Cells, Vol. 131, 12.2014, p. 85-91.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Recombination behavior and contact resistance of n+ and p+ poly-crystalline Si/mono-crystalline Si junctions
AU - Römer, Udo
AU - Peibst, Robby
AU - Ohrdes, Tobias
AU - Lim, Bianca
AU - Krügener, Jan
AU - Bugiel, Eberhard
AU - Wietler, Tobias
AU - Brendel, Rolf
N1 - Funding information: The authors thank Susanne Mau and Guido Glowatzki for their help with the processing of the test structures. This work was supported by the German Ministry for the Environment, Nature Conservation, Building and Nuclear Safety under Contract 0325478 (SimpliHigh) and the State of Lower Saxony.
PY - 2014/12
Y1 - 2014/12
N2 - We present an investigation of the electrical characteristics - recombination and contact resistance - of poly-crystalline (poly) Si/mono-crystalline (c) Si junctions and of the influence of the interfacial oxide between the poly-Si and the c-Si on these characteristics. In particular, we compare thermally grown oxides with different thickness values with wet chemically grown oxides. Both n- and p-type poly-Si emitters are investigated. For one combination (n-type poly-Si, thermal oxide), we compare planar and textured surfaces. For all oxide types investigated, we achieve combinations of low recombination current densities <20 fA/cm2 and low specific contact resistances <0.1 ω cm2. The corresponding implied open-circuit voltages measured on our test structures are 732 mV (n-type poly-Si) and 711 mV (p-type poly-Si). By applying these poly-Si layers on a solar cell structure, we achieve an open-circuit voltage of 714 mV and a series resistance of 0.6 ω cm2.
AB - We present an investigation of the electrical characteristics - recombination and contact resistance - of poly-crystalline (poly) Si/mono-crystalline (c) Si junctions and of the influence of the interfacial oxide between the poly-Si and the c-Si on these characteristics. In particular, we compare thermally grown oxides with different thickness values with wet chemically grown oxides. Both n- and p-type poly-Si emitters are investigated. For one combination (n-type poly-Si, thermal oxide), we compare planar and textured surfaces. For all oxide types investigated, we achieve combinations of low recombination current densities <20 fA/cm2 and low specific contact resistances <0.1 ω cm2. The corresponding implied open-circuit voltages measured on our test structures are 732 mV (n-type poly-Si) and 711 mV (p-type poly-Si). By applying these poly-Si layers on a solar cell structure, we achieve an open-circuit voltage of 714 mV and a series resistance of 0.6 ω cm2.
KW - Passivated contact
KW - Passivation
KW - Polysilicon
KW - Silicon solar cell
KW - Tunnel oxide
UR - http://www.scopus.com/inward/record.url?scp=84908401427&partnerID=8YFLogxK
U2 - 10.1016/j.solmat.2014.06.003
DO - 10.1016/j.solmat.2014.06.003
M3 - Article
AN - SCOPUS:84908401427
VL - 131
SP - 85
EP - 91
JO - Solar Energy Materials and Solar Cells
JF - Solar Energy Materials and Solar Cells
SN - 0927-0248
ER -