Recombination behavior and contact resistance of n+ and p+ poly-crystalline Si/mono-crystalline Si junctions

Research output: Contribution to journalArticleResearchpeer review

Authors

  • Udo Römer
  • Robby Peibst
  • Tobias Ohrdes
  • Bianca Lim
  • Jan Krügener
  • Eberhard Bugiel
  • Tobias Wietler
  • Rolf Brendel

External Research Organisations

  • Institute for Solar Energy Research (ISFH)
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Details

Original languageEnglish
Pages (from-to)85-91
Number of pages7
JournalSolar Energy Materials and Solar Cells
Volume131
Publication statusPublished - Dec 2014

Abstract

We present an investigation of the electrical characteristics - recombination and contact resistance - of poly-crystalline (poly) Si/mono-crystalline (c) Si junctions and of the influence of the interfacial oxide between the poly-Si and the c-Si on these characteristics. In particular, we compare thermally grown oxides with different thickness values with wet chemically grown oxides. Both n- and p-type poly-Si emitters are investigated. For one combination (n-type poly-Si, thermal oxide), we compare planar and textured surfaces. For all oxide types investigated, we achieve combinations of low recombination current densities <20 fA/cm2 and low specific contact resistances <0.1 ω cm2. The corresponding implied open-circuit voltages measured on our test structures are 732 mV (n-type poly-Si) and 711 mV (p-type poly-Si). By applying these poly-Si layers on a solar cell structure, we achieve an open-circuit voltage of 714 mV and a series resistance of 0.6 ω cm2.

Keywords

    Passivated contact, Passivation, Polysilicon, Silicon solar cell, Tunnel oxide

ASJC Scopus subject areas

Sustainable Development Goals

Cite this

Recombination behavior and contact resistance of n+ and p+ poly-crystalline Si/mono-crystalline Si junctions. / Römer, Udo; Peibst, Robby; Ohrdes, Tobias et al.
In: Solar Energy Materials and Solar Cells, Vol. 131, 12.2014, p. 85-91.

Research output: Contribution to journalArticleResearchpeer review

Römer U, Peibst R, Ohrdes T, Lim B, Krügener J, Bugiel E et al. Recombination behavior and contact resistance of n+ and p+ poly-crystalline Si/mono-crystalline Si junctions. Solar Energy Materials and Solar Cells. 2014 Dec;131:85-91. doi: 10.1016/j.solmat.2014.06.003
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abstract = "We present an investigation of the electrical characteristics - recombination and contact resistance - of poly-crystalline (poly) Si/mono-crystalline (c) Si junctions and of the influence of the interfacial oxide between the poly-Si and the c-Si on these characteristics. In particular, we compare thermally grown oxides with different thickness values with wet chemically grown oxides. Both n- and p-type poly-Si emitters are investigated. For one combination (n-type poly-Si, thermal oxide), we compare planar and textured surfaces. For all oxide types investigated, we achieve combinations of low recombination current densities <20 fA/cm2 and low specific contact resistances <0.1 ω cm2. The corresponding implied open-circuit voltages measured on our test structures are 732 mV (n-type poly-Si) and 711 mV (p-type poly-Si). By applying these poly-Si layers on a solar cell structure, we achieve an open-circuit voltage of 714 mV and a series resistance of 0.6 ω cm2.",
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T1 - Recombination behavior and contact resistance of n+ and p+ poly-crystalline Si/mono-crystalline Si junctions

AU - Römer, Udo

AU - Peibst, Robby

AU - Ohrdes, Tobias

AU - Lim, Bianca

AU - Krügener, Jan

AU - Bugiel, Eberhard

AU - Wietler, Tobias

AU - Brendel, Rolf

N1 - Funding information: The authors thank Susanne Mau and Guido Glowatzki for their help with the processing of the test structures. This work was supported by the German Ministry for the Environment, Nature Conservation, Building and Nuclear Safety under Contract 0325478 (SimpliHigh) and the State of Lower Saxony.

PY - 2014/12

Y1 - 2014/12

N2 - We present an investigation of the electrical characteristics - recombination and contact resistance - of poly-crystalline (poly) Si/mono-crystalline (c) Si junctions and of the influence of the interfacial oxide between the poly-Si and the c-Si on these characteristics. In particular, we compare thermally grown oxides with different thickness values with wet chemically grown oxides. Both n- and p-type poly-Si emitters are investigated. For one combination (n-type poly-Si, thermal oxide), we compare planar and textured surfaces. For all oxide types investigated, we achieve combinations of low recombination current densities <20 fA/cm2 and low specific contact resistances <0.1 ω cm2. The corresponding implied open-circuit voltages measured on our test structures are 732 mV (n-type poly-Si) and 711 mV (p-type poly-Si). By applying these poly-Si layers on a solar cell structure, we achieve an open-circuit voltage of 714 mV and a series resistance of 0.6 ω cm2.

AB - We present an investigation of the electrical characteristics - recombination and contact resistance - of poly-crystalline (poly) Si/mono-crystalline (c) Si junctions and of the influence of the interfacial oxide between the poly-Si and the c-Si on these characteristics. In particular, we compare thermally grown oxides with different thickness values with wet chemically grown oxides. Both n- and p-type poly-Si emitters are investigated. For one combination (n-type poly-Si, thermal oxide), we compare planar and textured surfaces. For all oxide types investigated, we achieve combinations of low recombination current densities <20 fA/cm2 and low specific contact resistances <0.1 ω cm2. The corresponding implied open-circuit voltages measured on our test structures are 732 mV (n-type poly-Si) and 711 mV (p-type poly-Si). By applying these poly-Si layers on a solar cell structure, we achieve an open-circuit voltage of 714 mV and a series resistance of 0.6 ω cm2.

KW - Passivated contact

KW - Passivation

KW - Polysilicon

KW - Silicon solar cell

KW - Tunnel oxide

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