Details
| Original language | English |
|---|---|
| Article number | 6018976 |
| Pages (from-to) | 54-58 |
| Number of pages | 5 |
| Journal | IEEE journal of photovoltaics |
| Volume | 1 |
| Issue number | 1 |
| Publication status | Published - 15 Sept 2011 |
| Externally published | Yes |
Abstract
In this paper, we present experimental data regarding the recombination activity and concentration of the boron-oxygen complex in compensated n-type silicon, doped with phosphorus and boron, when subjected to illumination. Unlike the data of Bothe in n-type silicon compensated with thermal donors, our results suggest the dominant defect level in our doping range to be a shallow level (E C-E T 0.15 eV), with a capture cross-section ratio σ n/σ p of around 0.006, suggesting a negatively charged center. We also confirm previous results showing an increasing defect density with bias light intensity. Due to the strong lifetime reduction observed, we suggest that this material might not be suited to make high-efficiency n-type solar cells, unless practical strategies to reduce the defect concentration can be developed.
Keywords
- Compensated, light-induced degradation, n-type, silicon
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Electrical and Electronic Engineering
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In: IEEE journal of photovoltaics, Vol. 1, No. 1, 6018976, 15.09.2011, p. 54-58.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Recombination activity and impact of the boron-oxygen-related defect in compensated N-type silicon
AU - Rougieux, F. E.
AU - Forster, M.
AU - MacDonald, D.
AU - Cuevas, A.
AU - Lim, B.
AU - Schmidt, J.
PY - 2011/9/15
Y1 - 2011/9/15
N2 - In this paper, we present experimental data regarding the recombination activity and concentration of the boron-oxygen complex in compensated n-type silicon, doped with phosphorus and boron, when subjected to illumination. Unlike the data of Bothe in n-type silicon compensated with thermal donors, our results suggest the dominant defect level in our doping range to be a shallow level (E C-E T 0.15 eV), with a capture cross-section ratio σ n/σ p of around 0.006, suggesting a negatively charged center. We also confirm previous results showing an increasing defect density with bias light intensity. Due to the strong lifetime reduction observed, we suggest that this material might not be suited to make high-efficiency n-type solar cells, unless practical strategies to reduce the defect concentration can be developed.
AB - In this paper, we present experimental data regarding the recombination activity and concentration of the boron-oxygen complex in compensated n-type silicon, doped with phosphorus and boron, when subjected to illumination. Unlike the data of Bothe in n-type silicon compensated with thermal donors, our results suggest the dominant defect level in our doping range to be a shallow level (E C-E T 0.15 eV), with a capture cross-section ratio σ n/σ p of around 0.006, suggesting a negatively charged center. We also confirm previous results showing an increasing defect density with bias light intensity. Due to the strong lifetime reduction observed, we suggest that this material might not be suited to make high-efficiency n-type solar cells, unless practical strategies to reduce the defect concentration can be developed.
KW - Compensated
KW - light-induced degradation
KW - n-type
KW - silicon
UR - http://www.scopus.com/inward/record.url?scp=84865166918&partnerID=8YFLogxK
U2 - 10.1109/JPHOTOV.2011.2165698
DO - 10.1109/JPHOTOV.2011.2165698
M3 - Article
AN - SCOPUS:84865166918
VL - 1
SP - 54
EP - 58
JO - IEEE journal of photovoltaics
JF - IEEE journal of photovoltaics
SN - 2156-3381
IS - 1
M1 - 6018976
ER -