Details
| Original language | English |
|---|---|
| Article number | 111467 |
| Journal | Solar Energy Materials and Solar Cells |
| Volume | 235 |
| Early online date | 24 Nov 2021 |
| Publication status | Published - Jan 2022 |
| Externally published | Yes |
Abstract
Characterisation and optimization of next-generation silicon solar cell concepts rely on an accurate knowledge of intrinsic charge carrier recombination in crystalline silicon. Reports of measured lifetimes exceeding the previous accepted parameterisation of intrinsic recombination indicate an overestimation of this recombination in certain injection regimes and hence the need for revision. In this work, twelve high-quality silicon sample sets covering a wide doping range are fabricated using state-of-the-art processing routes in order to permit an accurate assessment of intrinsic recombination based on wafer thickness variation. Special care is taken to mitigate extrinsic recombination due to bulk contamination or at the wafer surfaces. The combination of the high-quality samples with refined sample characterisation and lifetime measurements enables a much higher level of accuracy to be achieved compared to previous studies. We observe that reabsorption of luminescence photons inside the sample must be accounted for to achieve a precise description of radiative recombination. With this effect taken into account, we extract the lifetime limitation due to Auger recombination. We find that the extracted Auger recombination rate can accurately be parameterized using a physically motivated equation based on Coulomb-enhanced Auger recombination for all doping and injection conditions relevant for silicon-based photovoltaics. The improved accuracy of data description obtained with the model suggests that our new parameterisation is more consistent with the actual recombination process than previous models. Due to notable changes in Auger recombination predicted for moderate injection, we further revise the fundamental limiting power conversion efficiency for a single-junction crystalline silicon solar cell to 29.4%, which is within 0.1% abs compared to other recent assessments.
Keywords
- Auger recombination, Charge carrier lifetime, Intrinsic recombination, Parameterisation, Silicon, Single-junction maximum efficiency
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Energy(all)
- Renewable Energy, Sustainability and the Environment
- Materials Science(all)
- Surfaces, Coatings and Films
Sustainable Development Goals
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In: Solar Energy Materials and Solar Cells, Vol. 235, 111467, 01.2022.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Reassessment of the intrinsic bulk recombination in crystalline silicon
AU - Niewelt, Tim
AU - Steinhauser, Bernd
AU - Richter, Armin
AU - Veith-Wolf, Boris A.
AU - Fell, Andreas
AU - Hammann, B.
AU - Grant, Nicholas
AU - Black, Lachlan
AU - Tan, J.
AU - Youssef, A.
AU - Murphy, John
AU - Schmidt, Jan
AU - Schubert, Martin
AU - Glunz, Stefan W.
N1 - Funding information: This work was funded by the German Federal Ministry for Economic Affairs and Energy ( BMWi ) in project LIMES under the contract numbers 0324204 A ( University of Freiburg ), 0324204C ( Fraunhofer ISE) and 0324204D ( ISFH ). Work at the University of Warwick was supported by the Engineering and Physical Sciences Research Council ( EP/M024911/1 ) and the Leverhulme Trust ( RPG-2020-377 ). Work at the Australian National University was supported by the Australian Renewable Energy Agency ( ARENA ) through project RND017.
PY - 2022/1
Y1 - 2022/1
N2 - Characterisation and optimization of next-generation silicon solar cell concepts rely on an accurate knowledge of intrinsic charge carrier recombination in crystalline silicon. Reports of measured lifetimes exceeding the previous accepted parameterisation of intrinsic recombination indicate an overestimation of this recombination in certain injection regimes and hence the need for revision. In this work, twelve high-quality silicon sample sets covering a wide doping range are fabricated using state-of-the-art processing routes in order to permit an accurate assessment of intrinsic recombination based on wafer thickness variation. Special care is taken to mitigate extrinsic recombination due to bulk contamination or at the wafer surfaces. The combination of the high-quality samples with refined sample characterisation and lifetime measurements enables a much higher level of accuracy to be achieved compared to previous studies. We observe that reabsorption of luminescence photons inside the sample must be accounted for to achieve a precise description of radiative recombination. With this effect taken into account, we extract the lifetime limitation due to Auger recombination. We find that the extracted Auger recombination rate can accurately be parameterized using a physically motivated equation based on Coulomb-enhanced Auger recombination for all doping and injection conditions relevant for silicon-based photovoltaics. The improved accuracy of data description obtained with the model suggests that our new parameterisation is more consistent with the actual recombination process than previous models. Due to notable changes in Auger recombination predicted for moderate injection, we further revise the fundamental limiting power conversion efficiency for a single-junction crystalline silicon solar cell to 29.4%, which is within 0.1% abs compared to other recent assessments.
AB - Characterisation and optimization of next-generation silicon solar cell concepts rely on an accurate knowledge of intrinsic charge carrier recombination in crystalline silicon. Reports of measured lifetimes exceeding the previous accepted parameterisation of intrinsic recombination indicate an overestimation of this recombination in certain injection regimes and hence the need for revision. In this work, twelve high-quality silicon sample sets covering a wide doping range are fabricated using state-of-the-art processing routes in order to permit an accurate assessment of intrinsic recombination based on wafer thickness variation. Special care is taken to mitigate extrinsic recombination due to bulk contamination or at the wafer surfaces. The combination of the high-quality samples with refined sample characterisation and lifetime measurements enables a much higher level of accuracy to be achieved compared to previous studies. We observe that reabsorption of luminescence photons inside the sample must be accounted for to achieve a precise description of radiative recombination. With this effect taken into account, we extract the lifetime limitation due to Auger recombination. We find that the extracted Auger recombination rate can accurately be parameterized using a physically motivated equation based on Coulomb-enhanced Auger recombination for all doping and injection conditions relevant for silicon-based photovoltaics. The improved accuracy of data description obtained with the model suggests that our new parameterisation is more consistent with the actual recombination process than previous models. Due to notable changes in Auger recombination predicted for moderate injection, we further revise the fundamental limiting power conversion efficiency for a single-junction crystalline silicon solar cell to 29.4%, which is within 0.1% abs compared to other recent assessments.
KW - Auger recombination
KW - Charge carrier lifetime
KW - Intrinsic recombination
KW - Parameterisation
KW - Silicon
KW - Single-junction maximum efficiency
UR - http://www.scopus.com/inward/record.url?scp=85119620507&partnerID=8YFLogxK
U2 - 10.1016/j.solmat.2021.111467
DO - 10.1016/j.solmat.2021.111467
M3 - Article
VL - 235
JO - Solar Energy Materials and Solar Cells
JF - Solar Energy Materials and Solar Cells
SN - 0927-0248
M1 - 111467
ER -