Details
| Original language | English |
|---|---|
| Article number | 6 |
| Journal | EPJ Photovoltaics |
| Volume | 12 |
| Publication status | Published - 9 Nov 2021 |
Abstract
Polysilicon-on-oxide (POLO) passivating contacts and interdigitated back-contact (IBC) cell technologies have recently attracted a lot of interest as candidates for the implementation in the next generation of solar cells. An IBC cell with POLO junctions for both polarities-a POLO2-IBC cell-has to electrically isolate the highly defective p+ and n+ poly-Si regions on the rear side of the cell to avoid parasitic recombination. Inserting an initially undoped, intrinsic (i) region between the p+ and n+ poly-Si regions was demonstrated to successfully prevent the parasitic recombination in the transition region of ISFH's 26.1%-efficient POLO2-IBC cell. In order to further improve the conversion efficiency towards 27%, we apply hydrogen-donating dielectric layer stacks to the p+-(i)-n+ POLO interdigitating rear side to enhance the passivation quality of the POLO junctions. We indeed show a significant improvement of POLO junctions on symmetrical full-Area homogenously doped reference samples, but when we apply a hydrogen-donating layer stack on the p+-(i)-n+ POLO interdigitating rear side, we observe a strong degradation in the performance of the POLO2-IBC cell. We attribute this to the formation of a conductive channel between the p+ and n+ poly-Si regions due to the strong negative charge density of the hydrogen-donating layer stack.
Keywords
- Charge, Hydrogenation, IBC, Passivating contact, POLO, Polysilicon, Recombination
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Energy(all)
- Renewable Energy, Sustainability and the Environment
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Electrical and Electronic Engineering
Sustainable Development Goals
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In: EPJ Photovoltaics, Vol. 12, 6, 09.11.2021.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Rear side dielectrics on interdigitating p +-(i)-n +back-contact solar cells-hydrogenation vs. charge effects
AU - Rienäcker, Michael
AU - Larionova, Yevgeniya
AU - Krügener, Jan
AU - Wolter, Sascha
AU - Brendel, Rolf
AU - Peibst, Robby
N1 - Funding Information: The authors thank the state of lower Saxony and the Federal Ministry of Economic Affairs (BMWi) for funding this work, which was performed in the framework of the research project “27Plus6” (FKZ03EE1056A). We are grateful to Hilke Fischer, Sarah Spätlich and Renate Winter (all from ISFH) as well as Raymond Zieseniss and Guido Glowatzki (both from Institute of Electronic Materials and Devices) for sample processing. We thank Felix Haase and Christina Hollemann for fruitful discussions.
PY - 2021/11/9
Y1 - 2021/11/9
N2 - Polysilicon-on-oxide (POLO) passivating contacts and interdigitated back-contact (IBC) cell technologies have recently attracted a lot of interest as candidates for the implementation in the next generation of solar cells. An IBC cell with POLO junctions for both polarities-a POLO2-IBC cell-has to electrically isolate the highly defective p+ and n+ poly-Si regions on the rear side of the cell to avoid parasitic recombination. Inserting an initially undoped, intrinsic (i) region between the p+ and n+ poly-Si regions was demonstrated to successfully prevent the parasitic recombination in the transition region of ISFH's 26.1%-efficient POLO2-IBC cell. In order to further improve the conversion efficiency towards 27%, we apply hydrogen-donating dielectric layer stacks to the p+-(i)-n+ POLO interdigitating rear side to enhance the passivation quality of the POLO junctions. We indeed show a significant improvement of POLO junctions on symmetrical full-Area homogenously doped reference samples, but when we apply a hydrogen-donating layer stack on the p+-(i)-n+ POLO interdigitating rear side, we observe a strong degradation in the performance of the POLO2-IBC cell. We attribute this to the formation of a conductive channel between the p+ and n+ poly-Si regions due to the strong negative charge density of the hydrogen-donating layer stack.
AB - Polysilicon-on-oxide (POLO) passivating contacts and interdigitated back-contact (IBC) cell technologies have recently attracted a lot of interest as candidates for the implementation in the next generation of solar cells. An IBC cell with POLO junctions for both polarities-a POLO2-IBC cell-has to electrically isolate the highly defective p+ and n+ poly-Si regions on the rear side of the cell to avoid parasitic recombination. Inserting an initially undoped, intrinsic (i) region between the p+ and n+ poly-Si regions was demonstrated to successfully prevent the parasitic recombination in the transition region of ISFH's 26.1%-efficient POLO2-IBC cell. In order to further improve the conversion efficiency towards 27%, we apply hydrogen-donating dielectric layer stacks to the p+-(i)-n+ POLO interdigitating rear side to enhance the passivation quality of the POLO junctions. We indeed show a significant improvement of POLO junctions on symmetrical full-Area homogenously doped reference samples, but when we apply a hydrogen-donating layer stack on the p+-(i)-n+ POLO interdigitating rear side, we observe a strong degradation in the performance of the POLO2-IBC cell. We attribute this to the formation of a conductive channel between the p+ and n+ poly-Si regions due to the strong negative charge density of the hydrogen-donating layer stack.
KW - Charge
KW - Hydrogenation
KW - IBC
KW - Passivating contact
KW - POLO
KW - Polysilicon
KW - Recombination
UR - http://www.scopus.com/inward/record.url?scp=85119094617&partnerID=8YFLogxK
U2 - 10.1051/epjpv/2021007
DO - 10.1051/epjpv/2021007
M3 - Article
AN - SCOPUS:85119094617
VL - 12
JO - EPJ Photovoltaics
JF - EPJ Photovoltaics
M1 - 6
ER -