Details
| Original language | English |
|---|---|
| Pages (from-to) | 3174-3176 |
| Number of pages | 3 |
| Journal | Applied physics letters |
| Volume | 62 |
| Issue number | 24 |
| Publication status | Published - 1 Dec 1993 |
| Externally published | Yes |
Abstract
By etching narrow trenches in an AlGaAs/GaAs heterostructure and defining a channel and six in-plane gates in the two-dimensional electron gas, a single-electron transistor is produced in a simple way. As expected from charging effects, the conductivity of the transistor oscillates with the voltage on each gate. However, in contrast to metallic devices or heterostructure devices with metallic top gates, the voltage dependent depletion of the gates themselves leads to changes in the period of the oscillations.
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Physics and Astronomy (miscellaneous)
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In: Applied physics letters, Vol. 62, No. 24, 01.12.1993, p. 3174-3176.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Realization of an in-plane-gate single-electron transistor
AU - Pothier, H.
AU - Weis, J.
AU - Haug, R. J.
AU - Klitzing, K. V.
AU - Ploog, K.
PY - 1993/12/1
Y1 - 1993/12/1
N2 - By etching narrow trenches in an AlGaAs/GaAs heterostructure and defining a channel and six in-plane gates in the two-dimensional electron gas, a single-electron transistor is produced in a simple way. As expected from charging effects, the conductivity of the transistor oscillates with the voltage on each gate. However, in contrast to metallic devices or heterostructure devices with metallic top gates, the voltage dependent depletion of the gates themselves leads to changes in the period of the oscillations.
AB - By etching narrow trenches in an AlGaAs/GaAs heterostructure and defining a channel and six in-plane gates in the two-dimensional electron gas, a single-electron transistor is produced in a simple way. As expected from charging effects, the conductivity of the transistor oscillates with the voltage on each gate. However, in contrast to metallic devices or heterostructure devices with metallic top gates, the voltage dependent depletion of the gates themselves leads to changes in the period of the oscillations.
UR - http://www.scopus.com/inward/record.url?scp=0009383654&partnerID=8YFLogxK
U2 - 10.1063/1.109120
DO - 10.1063/1.109120
M3 - Article
AN - SCOPUS:0009383654
VL - 62
SP - 3174
EP - 3176
JO - Applied physics letters
JF - Applied physics letters
SN - 0003-6951
IS - 24
ER -