Raman investigations of elastic strain relief in Si1-xGe x layers on patterned silicon substrate

Research output: Contribution to journal › Article › Research › peer review

Authors

  • B. Dietrich
  • E. Bugiel
  • H. J. Osten
  • P. Zaumseil

External Research Organisations

  • Leibniz Institute for High Performance Microelectronics (IHP)
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Details

Original languageEnglish
Pages (from-to)7223-7227
Number of pages5
JournalJournal of applied physics
Volume74
Issue number12
Publication statusPublished - 15 Dec 1993
Externally publishedYes

Abstract

The appearance of an elastic strain relief in narrow mesalike patterned Si1-xGex heteroepitaxial layers is shown. A Si 1-xGex layer was deposited on a mesalike patterned Si(001) substrate by molecular-beam epitaxy. The germanium concentration was x=14%, the layer thickness h=96 μm was several times larger than the critical thickness hc. The layers on top of the mesas were investigated by Raman microscopy. The Raman line shifts of the wider mesas and their dislocation densities agree with the predicted strain reduction by generation of misfit dislocations. On the narrow mesas an additional shift of the Raman lines toward the unstrained alloylike Raman frequency was measured. It is caused by an elastic strain relief on top of the narrow mesas. An estimation of the expected Raman line shifts is given assuming an uniaxially strained SiGe layer. The calculated line shifts agree sufficiently with the measured values. The elastic strain relief reduces the free energy of the layer-substrate system, reduces the stress in the pseudomorphic layer, and stabilizes the structure. The effect arises if the mesas are narrower than 2 μm. It is therefore of interest in all submicrometer technologies.

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Cite this

Raman investigations of elastic strain relief in Si1-xGe x layers on patterned silicon substrate. / Dietrich, B.; Bugiel, E.; Osten, H. J. et al.
In: Journal of applied physics, Vol. 74, No. 12, 15.12.1993, p. 7223-7227.

Research output: Contribution to journal › Article › Research › peer review

Dietrich B, Bugiel E, Osten HJ, Zaumseil P. Raman investigations of elastic strain relief in Si1-xGe x layers on patterned silicon substrate. Journal of applied physics. 1993 Dec 15;74(12):7223-7227. doi: 10.1063/1.355335
Dietrich, B. ; Bugiel, E. ; Osten, H. J. et al. / Raman investigations of elastic strain relief in Si1-xGe x layers on patterned silicon substrate. In: Journal of applied physics. 1993 ; Vol. 74, No. 12. pp. 7223-7227.
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AU - Dietrich, B.

AU - Bugiel, E.

AU - Osten, H. J.

AU - Zaumseil, P.

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