Details
| Original language | English |
|---|---|
| Article number | 034022 |
| Journal | Phys. Rev. Applied |
| Volume | 9 |
| Issue number | 3 |
| Publication status | Published - 23 Mar 2018 |
| Externally published | Yes |
Abstract
Although various defect centers have displayed promise as either quantum sensors, single photon emitters, or light-matter interfaces, the search for an ideal defect with multifunctional ability remains open. In this spirit, we study the dichroic silicon vacancies in silicon carbide that feature two well-distinguishable zero-phonon lines and analyze the quantum properties in their optical emission and spin control. We demonstrate that this center combines 40% optical emission into the zero-phonon lines showing the contrasting difference in optical properties with varying temperature and polarization, and a 100% increase in the fluorescence intensity upon the spin resonance, and long spin coherence time of their spin-3/2 ground states up to 0.6 ms. These results single out this defect center as a promising system for spin-based quantum technologies.
Keywords
- Silicon carbide, Polarization, Silicon Vacancies
ASJC Scopus subject areas
- Physics and Astronomy(all)
- General Physics and Astronomy
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In: Phys. Rev. Applied, Vol. 9, No. 3, 034022, 23.03.2018.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Quantum Properties of Dichroic Silicon Vacancies in Silicon Carbide
AU - Nagy, Roland
AU - Widmann, Matthias
AU - Niethammer, Matthias
AU - Dasari, Durga B. R.
AU - Gerhardt, Ilja
AU - Soykal, Öney O.
AU - Radulaski, Marina
AU - Ohshima, Takeshi
AU - Vuckovic, Jelena
AU - Son, Nguyen Tien
AU - Ivanov, Ivan G.
AU - Economou, Sophia E.
AU - Bonato, Cristian
AU - Lee, Sang-Yun
AU - Wrachtrup, Jörg
N1 - ACKNOWLEDGMENTS This work was supported by the ERA.Net RUS Plus Program (DIABASE), the DFG via priority programme 1601, the EU via ERC Grant SMel and Diadems, the Max Planck Society, the Carl Zeiss Stiftung, the Swedish Research Council (VR 2016-04068), the Carl-Trygger Stiftelse för Vetenskaplig Forskning (CTS 15:339), the Knut and AliceWallenberg Foundation (KAW2013.0300), the JSPS KAKENHI (A) 17H01056, the National Science Foundation DMR Grant No. 406028, the U.S. Office of Secretary of Defense Quantum Science and engineering Program, the COST Action MP1403 “Nanoscale Quantum Optics” funded by COST (European Cooperation in Science and Technology), and by EPSRC (Grant No. EP/P019803/1), the Army Research Office under Contract No. W911NF1310309, and the KIST Open Research Program (2E27231) and institutional program (2E27110). We thank Roman Kolesov, Rainer Stöhr, and Torsten Rendler for fruitful discussions and experimental aid. We also acknowledge motivating discussions with Michel Bockstedte, Adam Gali, Thomas L. Reinecke, and Jingyuan Linda Zhang.
PY - 2018/3/23
Y1 - 2018/3/23
N2 - Although various defect centers have displayed promise as either quantum sensors, single photon emitters, or light-matter interfaces, the search for an ideal defect with multifunctional ability remains open. In this spirit, we study the dichroic silicon vacancies in silicon carbide that feature two well-distinguishable zero-phonon lines and analyze the quantum properties in their optical emission and spin control. We demonstrate that this center combines 40% optical emission into the zero-phonon lines showing the contrasting difference in optical properties with varying temperature and polarization, and a 100% increase in the fluorescence intensity upon the spin resonance, and long spin coherence time of their spin-3/2 ground states up to 0.6 ms. These results single out this defect center as a promising system for spin-based quantum technologies.
AB - Although various defect centers have displayed promise as either quantum sensors, single photon emitters, or light-matter interfaces, the search for an ideal defect with multifunctional ability remains open. In this spirit, we study the dichroic silicon vacancies in silicon carbide that feature two well-distinguishable zero-phonon lines and analyze the quantum properties in their optical emission and spin control. We demonstrate that this center combines 40% optical emission into the zero-phonon lines showing the contrasting difference in optical properties with varying temperature and polarization, and a 100% increase in the fluorescence intensity upon the spin resonance, and long spin coherence time of their spin-3/2 ground states up to 0.6 ms. These results single out this defect center as a promising system for spin-based quantum technologies.
KW - Silicon carbide
KW - Polarization
KW - Silicon Vacancies
UR - http://www.scopus.com/inward/record.url?scp=85044466257&partnerID=8YFLogxK
U2 - 10.1103/PhysRevApplied.9.034022
DO - 10.1103/PhysRevApplied.9.034022
M3 - Article
VL - 9
JO - Phys. Rev. Applied
JF - Phys. Rev. Applied
SN - 2331-7019
IS - 3
M1 - 034022
ER -