Details
| Original language | English |
|---|---|
| Article number | 064001 |
| Journal | Applied physics letters |
| Volume | 125 |
| Issue number | 6 |
| Publication status | Published - 5 Aug 2024 |
Abstract
In the last decade, quantum resistance metrology has benefited from the application of graphene as the base material for the fabrication of quantum Hall (QH) resistance standards since it allows for the realization of the resistance unit ohm in the revised International System of Units under relaxed experimental conditions. Here, we present a detailed magnetotransport investigation of p-type epitaxial graphene, which was doped by the molecular acceptor F4-TCNQ. High-accuracy measurements of the QH resistance show an excellent quantization and a reproduction of the nominal value, the half of the von Klitzing constant RK/2, within 2 nΩ/Ω. It underlines the universality of the QH effect and shows that p-type epitaxial graphene can also serve as the basis for future resistance standards for operation at relaxed experimental conditions. For the p-type devices, the onset of the QH plateau is observed at about 1 T higher magnetic fields, which can be attributed to an additional disorder or a non-symmetric charge transfer mechanism in the QH regime.
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Physics and Astronomy (miscellaneous)
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In: Applied physics letters, Vol. 125, No. 6, 064001, 05.08.2024.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Quantum Hall resistance standards based on epitaxial graphene with p-type conductivity
AU - Yin, Yefei
AU - Kruskopf, Mattias
AU - Bauer, Stephan
AU - Tschirner, Teresa
AU - Pierz, Klaus
AU - Hohls, Frank
AU - Haug, Rolf J.
AU - Schumacher, Hans W.
N1 - Publisher Copyright: © 2024 Author(s).
PY - 2024/8/5
Y1 - 2024/8/5
N2 - In the last decade, quantum resistance metrology has benefited from the application of graphene as the base material for the fabrication of quantum Hall (QH) resistance standards since it allows for the realization of the resistance unit ohm in the revised International System of Units under relaxed experimental conditions. Here, we present a detailed magnetotransport investigation of p-type epitaxial graphene, which was doped by the molecular acceptor F4-TCNQ. High-accuracy measurements of the QH resistance show an excellent quantization and a reproduction of the nominal value, the half of the von Klitzing constant RK/2, within 2 nΩ/Ω. It underlines the universality of the QH effect and shows that p-type epitaxial graphene can also serve as the basis for future resistance standards for operation at relaxed experimental conditions. For the p-type devices, the onset of the QH plateau is observed at about 1 T higher magnetic fields, which can be attributed to an additional disorder or a non-symmetric charge transfer mechanism in the QH regime.
AB - In the last decade, quantum resistance metrology has benefited from the application of graphene as the base material for the fabrication of quantum Hall (QH) resistance standards since it allows for the realization of the resistance unit ohm in the revised International System of Units under relaxed experimental conditions. Here, we present a detailed magnetotransport investigation of p-type epitaxial graphene, which was doped by the molecular acceptor F4-TCNQ. High-accuracy measurements of the QH resistance show an excellent quantization and a reproduction of the nominal value, the half of the von Klitzing constant RK/2, within 2 nΩ/Ω. It underlines the universality of the QH effect and shows that p-type epitaxial graphene can also serve as the basis for future resistance standards for operation at relaxed experimental conditions. For the p-type devices, the onset of the QH plateau is observed at about 1 T higher magnetic fields, which can be attributed to an additional disorder or a non-symmetric charge transfer mechanism in the QH regime.
UR - http://www.scopus.com/inward/record.url?scp=85200707546&partnerID=8YFLogxK
U2 - 10.1063/5.0223723
DO - 10.1063/5.0223723
M3 - Article
AN - SCOPUS:85200707546
VL - 125
JO - Applied physics letters
JF - Applied physics letters
SN - 0003-6951
IS - 6
M1 - 064001
ER -