Details
| Original language | English |
|---|---|
| Title of host publication | 2024 Conference on Precision Electromagnetic Measurements, CPEM 2024 - Proceedings |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| ISBN (electronic) | 9798350361049 |
| Publication status | Published - 8 Jul 2024 |
| Externally published | Yes |
| Event | 2024 Conference on Precision Electromagnetic Measurements (CPEM) - Denver, United States Duration: 8 Jul 2024 → 12 Jul 2024 |
Publication series
| Name | CPEM Digest (Conference on Precision Electromagnetic Measurements) |
|---|---|
| ISSN (Print) | 0589-1485 |
Abstract
Epitaxial graphene-based quantum Hall resistance standards (QHRS) can be operated at relaxed working conditions compared to conventional GaAs heterostructure devices. To reach the desired magnetic field working point, exact and reliable control of the charge carrier density of graphene plays a crucial role. This can be achieved by post-growth deposition of F4-TCNQ molecular dopants embedded within a polymer host layer. Here, we investigate QHRS with different sequences of such doping and undoped spacer layers to find a structure that is as simple and optimal as possible. By high-accuracy resistance measurements we found excellent metrological quality for all types of devices in a broad magnetic field range starting at 5 T and at 4.2 K. The resistance quantization is maintained over two years, so far, which gives further confidence in the robustness and long-term stability of such molecular-doped graphene-based QHRS.
Keywords
- epitaxial graphene, metrology, quantum Hall effect, Resistance standards
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Instrumentation
- Engineering(all)
- Electrical and Electronic Engineering
Cite this
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2024 Conference on Precision Electromagnetic Measurements, CPEM 2024 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2024. (CPEM Digest (Conference on Precision Electromagnetic Measurements)).
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - Quantum Hall Resistance Standards Based on Epitaxial Graphene with Different Doping Layer Sequence
AU - Yin, Yefei
AU - Kruskopf, Mattias
AU - Chatterjee, Atasi
AU - Bauer, Stephan
AU - Tschirner, Teresa
AU - Gotz, Martin
AU - Hohls, Frank
AU - Pierz, Klaus
AU - Schumacher, Hans W.
N1 - Publisher Copyright: © 2024 IEEE.
PY - 2024/7/8
Y1 - 2024/7/8
N2 - Epitaxial graphene-based quantum Hall resistance standards (QHRS) can be operated at relaxed working conditions compared to conventional GaAs heterostructure devices. To reach the desired magnetic field working point, exact and reliable control of the charge carrier density of graphene plays a crucial role. This can be achieved by post-growth deposition of F4-TCNQ molecular dopants embedded within a polymer host layer. Here, we investigate QHRS with different sequences of such doping and undoped spacer layers to find a structure that is as simple and optimal as possible. By high-accuracy resistance measurements we found excellent metrological quality for all types of devices in a broad magnetic field range starting at 5 T and at 4.2 K. The resistance quantization is maintained over two years, so far, which gives further confidence in the robustness and long-term stability of such molecular-doped graphene-based QHRS.
AB - Epitaxial graphene-based quantum Hall resistance standards (QHRS) can be operated at relaxed working conditions compared to conventional GaAs heterostructure devices. To reach the desired magnetic field working point, exact and reliable control of the charge carrier density of graphene plays a crucial role. This can be achieved by post-growth deposition of F4-TCNQ molecular dopants embedded within a polymer host layer. Here, we investigate QHRS with different sequences of such doping and undoped spacer layers to find a structure that is as simple and optimal as possible. By high-accuracy resistance measurements we found excellent metrological quality for all types of devices in a broad magnetic field range starting at 5 T and at 4.2 K. The resistance quantization is maintained over two years, so far, which gives further confidence in the robustness and long-term stability of such molecular-doped graphene-based QHRS.
KW - epitaxial graphene
KW - metrology
KW - quantum Hall effect
KW - Resistance standards
UR - http://www.scopus.com/inward/record.url?scp=85203557656&partnerID=8YFLogxK
U2 - 10.1109/cpem61406.2024.10646126
DO - 10.1109/cpem61406.2024.10646126
M3 - Conference contribution
AN - SCOPUS:85203557656
T3 - CPEM Digest (Conference on Precision Electromagnetic Measurements)
BT - 2024 Conference on Precision Electromagnetic Measurements, CPEM 2024 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2024 Conference on Precision Electromagnetic Measurements (CPEM)
Y2 - 8 July 2024 through 12 July 2024
ER -