Details
| Original language | English |
|---|---|
| Title of host publication | Physics of Semiconductors |
| Subtitle of host publication | Proceedings of the 31st International Conference on the Physics of Semiconductors, ICPS 2012 |
| Pages | 223-224 |
| Number of pages | 2 |
| Publication status | Published - 31 Dec 2013 |
| Event | 31st International Conference on the Physics of Semiconductors, ICPS 2012 - Zurich, Switzerland Duration: 29 Jul 2012 → 3 Aug 2012 |
Publication series
| Name | AIP Conference Proceedings |
|---|---|
| Volume | 1566 |
| ISSN (Print) | 0094-243X |
| ISSN (electronic) | 1551-7616 |
Abstract
We present a lateral quantum dot device which has a tunable number of quantum dots. Depending on easily tunable gate voltages, one, two or three quantum dots are found. They are investigated in transport and charge detection.
Keywords
- Coulomb blockade, Quantum dots, single-electron tunneling
ASJC Scopus subject areas
- Physics and Astronomy(all)
- General Physics and Astronomy
Cite this
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Physics of Semiconductors: Proceedings of the 31st International Conference on the Physics of Semiconductors, ICPS 2012. 2013. p. 223-224 (AIP Conference Proceedings; Vol. 1566).
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - Quantum dot device tunable from single to triple dot system
AU - Rogge, M. C.
AU - Pierz, K.
AU - Haug, R. J.
PY - 2013/12/31
Y1 - 2013/12/31
N2 - We present a lateral quantum dot device which has a tunable number of quantum dots. Depending on easily tunable gate voltages, one, two or three quantum dots are found. They are investigated in transport and charge detection.
AB - We present a lateral quantum dot device which has a tunable number of quantum dots. Depending on easily tunable gate voltages, one, two or three quantum dots are found. They are investigated in transport and charge detection.
KW - Coulomb blockade
KW - Quantum dots
KW - single-electron tunneling
UR - http://www.scopus.com/inward/record.url?scp=84907358191&partnerID=8YFLogxK
U2 - 10.1063/1.4848366
DO - 10.1063/1.4848366
M3 - Conference contribution
AN - SCOPUS:84907358191
SN - 9780735411944
T3 - AIP Conference Proceedings
SP - 223
EP - 224
BT - Physics of Semiconductors
T2 - 31st International Conference on the Physics of Semiconductors, ICPS 2012
Y2 - 29 July 2012 through 3 August 2012
ER -