Quantum confinement effects in Si/Ge heterostructures with spatially ordered arrays of self-assembled quantum dots

Research output: Contribution to journalArticleResearchpeer review

Authors

  • Oleksiy B. Agafonov
  • Christian Dais
  • Detlev Grützmacher
  • Rolf J. Haug

Research Organisations

External Research Organisations

  • Paul Scherrer Institut (PSI)
  • Forschungszentrum Jülich
  • Jülich Aachen Research Alliance on Fundamentals of Future Information Technology (JARAFIT)
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Details

Original languageEnglish
Article number222107
JournalApplied physics letters
Volume96
Issue number22
Publication statusPublished - 31 May 2010

Abstract

Magnetotunneling spectroscopy was employed to probe the confinement in vertical Si/Ge double-barrier resonant tunneling diodes with regularly distributed Ge quantum dots. Their current-voltage characteristics reveal a steplike behavior in the vicinity of zero bias, indicating resonant tunneling of heavy-holes via three-dimensionally confined unoccupied hole states in Ge quantum dots. Assuming parabolic confinement, we extract the strength of the confinement potential of quantum dots.

ASJC Scopus subject areas

Cite this

Quantum confinement effects in Si/Ge heterostructures with spatially ordered arrays of self-assembled quantum dots. / Agafonov, Oleksiy B.; Dais, Christian; Grützmacher, Detlev et al.
In: Applied physics letters, Vol. 96, No. 22, 222107, 31.05.2010.

Research output: Contribution to journalArticleResearchpeer review

Agafonov, Oleksiy B. ; Dais, Christian ; Grützmacher, Detlev et al. / Quantum confinement effects in Si/Ge heterostructures with spatially ordered arrays of self-assembled quantum dots. In: Applied physics letters. 2010 ; Vol. 96, No. 22.
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