Details
| Original language | English |
|---|---|
| Title of host publication | Laser-Induced Damage in Optical Materials: 2004 |
| Subtitle of host publication | 36th Annual Boulder Damage Symposium proceedings ; 20 - 22 September 2004, Boulder, Colorado |
| Place of Publication | Bellingham |
| Publisher | SPIE |
| Pages | 53-60 |
| Number of pages | 8 |
| ISBN (print) | 0-8194-5607-1 |
| Publication status | Published - 21 Feb 2005 |
| Externally published | Yes |
| Event | 36th Annual Boulder Damage Symposium : Laser-Induced Damage in Optical Materials: 2004 - Boulder, CO, United States Duration: 20 Sept 2004 → 22 Sept 2004 |
Publication series
| Name | Proceedings of SPIE - The International Society for Optical Engineering |
|---|---|
| Publisher | SPIE |
| Volume | 5647 |
| ISSN (Print) | 0277-786X |
Abstract
In comparison to studies at longer pulse regimes, investigations of laser induced damage threshold indicate a contrary behavior on the fs-scale for the dielectric coatings. In general, experiments reveal an electronic cause of the damage. The strong correlation of theoretical calculations with experimental data of laser induced damage thresholds for quartz verifies this assumption. Consequently, the characteristic function of the wavelength dependence of the damage threshold differs in this range from the classical behavior. The quantized structure of the electronic transition leads to a typical step function of the LIDT in dependence on the band gap energy of the materials. Hence, the step should be observed between energy levels from n to n+1 electron ionization. In detail, the probability for the transition of the electron from the valence band to the conduction band changes abruptly. In an international cooperation with the University of Vilnius the wavelength dependence of the LIDT was investigated for dielectric coatings of TxSi1-xO 2as a function of the stoichiometry. The measurements were performed for a wavelength range from 600 to 800 nm and at a pulse duration of 130 fs by using an OPA laser system. The step from two photon to three photon ionization was measured. The assumption of the mentioned behavior of the fs-damage was proven. For different concentrations of silicon and titanium in the oxide, the electronic structure of the material changes. The experiments have shown an increasing gap energy and LIDT for a high content of silica.
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Condensed Matter Physics
- Computer Science(all)
- Computer Science Applications
- Mathematics(all)
- Applied Mathematics
- Engineering(all)
- Electrical and Electronic Engineering
Cite this
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Laser-Induced Damage in Optical Materials: 2004: 36th Annual Boulder Damage Symposium proceedings ; 20 - 22 September 2004, Boulder, Colorado. Bellingham: SPIE, 2005. p. 53-60 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 5647).
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - Quantized behavior of the LIDT in the fs-range in dielectric layers
AU - Jupé, Marco
AU - Jensen, Lars
AU - Starke, Kai
AU - Ristau, Detlev
AU - Melninkaitis, Andrius
AU - Grigonis, R.
AU - Sirutkaitis, Valdas
PY - 2005/2/21
Y1 - 2005/2/21
N2 - In comparison to studies at longer pulse regimes, investigations of laser induced damage threshold indicate a contrary behavior on the fs-scale for the dielectric coatings. In general, experiments reveal an electronic cause of the damage. The strong correlation of theoretical calculations with experimental data of laser induced damage thresholds for quartz verifies this assumption. Consequently, the characteristic function of the wavelength dependence of the damage threshold differs in this range from the classical behavior. The quantized structure of the electronic transition leads to a typical step function of the LIDT in dependence on the band gap energy of the materials. Hence, the step should be observed between energy levels from n to n+1 electron ionization. In detail, the probability for the transition of the electron from the valence band to the conduction band changes abruptly. In an international cooperation with the University of Vilnius the wavelength dependence of the LIDT was investigated for dielectric coatings of TxSi1-xO 2as a function of the stoichiometry. The measurements were performed for a wavelength range from 600 to 800 nm and at a pulse duration of 130 fs by using an OPA laser system. The step from two photon to three photon ionization was measured. The assumption of the mentioned behavior of the fs-damage was proven. For different concentrations of silicon and titanium in the oxide, the electronic structure of the material changes. The experiments have shown an increasing gap energy and LIDT for a high content of silica.
AB - In comparison to studies at longer pulse regimes, investigations of laser induced damage threshold indicate a contrary behavior on the fs-scale for the dielectric coatings. In general, experiments reveal an electronic cause of the damage. The strong correlation of theoretical calculations with experimental data of laser induced damage thresholds for quartz verifies this assumption. Consequently, the characteristic function of the wavelength dependence of the damage threshold differs in this range from the classical behavior. The quantized structure of the electronic transition leads to a typical step function of the LIDT in dependence on the band gap energy of the materials. Hence, the step should be observed between energy levels from n to n+1 electron ionization. In detail, the probability for the transition of the electron from the valence band to the conduction band changes abruptly. In an international cooperation with the University of Vilnius the wavelength dependence of the LIDT was investigated for dielectric coatings of TxSi1-xO 2as a function of the stoichiometry. The measurements were performed for a wavelength range from 600 to 800 nm and at a pulse duration of 130 fs by using an OPA laser system. The step from two photon to three photon ionization was measured. The assumption of the mentioned behavior of the fs-damage was proven. For different concentrations of silicon and titanium in the oxide, the electronic structure of the material changes. The experiments have shown an increasing gap energy and LIDT for a high content of silica.
UR - http://www.scopus.com/inward/record.url?scp=18744380698&partnerID=8YFLogxK
U2 - 10.1117/12.597993
DO - 10.1117/12.597993
M3 - Conference contribution
AN - SCOPUS:18744380698
SN - 0-8194-5607-1
T3 - Proceedings of SPIE - The International Society for Optical Engineering
SP - 53
EP - 60
BT - Laser-Induced Damage in Optical Materials: 2004
PB - SPIE
CY - Bellingham
T2 - 36th Annual Boulder Damage Symposium
Y2 - 20 September 2004 through 22 September 2004
ER -