Details
| Original language | English |
|---|---|
| Pages (from-to) | 9869-9873 |
| Number of pages | 5 |
| Journal | Journal of Applied Physics |
| Volume | 91 |
| Issue number | 12 |
| Publication status | Published - 30 May 2002 |
| Externally published | Yes |
Abstract
If a spatially nonuniform carrier distribution is optically excited in an electrically biased semiconductor, complicated carrier motion can be expected due to temporal and spatial variations of the screened electric field. We present an experimental method that allows one to quantify the drift velocity of carrier ensembles versus time in time-dependent electric fields. The method is based on the analysis of spatially resolved photoluminescence images at different times, recorded with a streak camera. With this technique, we have studied the details of carrier sweep out in photoconductive switches.
ASJC Scopus subject areas
- Physics and Astronomy(all)
- General Physics and Astronomy
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In: Journal of Applied Physics, Vol. 91, No. 12, 30.05.2002, p. 9869-9873.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Quantifying the drift velocity of carrier ensembles in time-dependent electric fields
AU - Bieler, M.
AU - Hübner, Jens
AU - Oestreich, Michael
AU - Koch, Martin
AU - Hein, G.
AU - Pierz, K.
AU - Siegner, U.
PY - 2002/5/30
Y1 - 2002/5/30
N2 - If a spatially nonuniform carrier distribution is optically excited in an electrically biased semiconductor, complicated carrier motion can be expected due to temporal and spatial variations of the screened electric field. We present an experimental method that allows one to quantify the drift velocity of carrier ensembles versus time in time-dependent electric fields. The method is based on the analysis of spatially resolved photoluminescence images at different times, recorded with a streak camera. With this technique, we have studied the details of carrier sweep out in photoconductive switches.
AB - If a spatially nonuniform carrier distribution is optically excited in an electrically biased semiconductor, complicated carrier motion can be expected due to temporal and spatial variations of the screened electric field. We present an experimental method that allows one to quantify the drift velocity of carrier ensembles versus time in time-dependent electric fields. The method is based on the analysis of spatially resolved photoluminescence images at different times, recorded with a streak camera. With this technique, we have studied the details of carrier sweep out in photoconductive switches.
UR - http://www.scopus.com/inward/record.url?scp=0037097955&partnerID=8YFLogxK
U2 - 10.1063/1.1478141
DO - 10.1063/1.1478141
M3 - Article
AN - SCOPUS:0037097955
VL - 91
SP - 9869
EP - 9873
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 12
ER -