Pyramid Formation by Etching of InxGa1−xN /GaN Quantum Well Structures Grown on N-face GaN for Nanooptical Light Emitters

Research output: Contribution to journal › Article › Research › peer review

Authors

  • Uwe Rossow
  • Shawutijiang Sidikejiang
  • Samar Hagag
  • Philipp Horenburg
  • Philipp Henning
  • Rodrigo de Vasconcellos Lourenco
  • Heiko Bremers
  • Andreas Hangleiter

External Research Organisations

  • Technische Universität Braunschweig
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Details

Original languageEnglish
Article number2100085
JournalPhysica Status Solidi (B) Basic Research
Volume258
Issue number10
Early online date20 Jul 2021
Publication statusPublished - 8 Oct 2021
Externally publishedYes

Abstract

While growth processes of (Formula presented.) /GaN quantum well (QW) structures on the Ga face of GaN buffer layers are already optimized to obtain high quantum efficiency, the growth on N-face has gained momentum only in the past years. Compared with Ga face (Formula presented.) layers are more stable on N face, and the surface can easily be structured by wet chemical etching, which usually leads to the formation of pyramids on the surface. This allows a new way to realize nanooptical light emitters, which offers the possibility to produce structures with similar emission properties. First, (Formula presented.) /GaN (single or multi-) QW structures on N-face GaN are grown. In a second step, pyramids are formed by KOH etching. Pyramids with smooth side facets of the type (Formula presented.) are demonstrated and sharp tips in the nanometer range can be achieved without any sign of damage. Transmission electron microscopy (TEM) reveals that (Formula presented.) quantum dot-like structures are present in the pyramids and in photoluminescence narrow emission lines are observed. The etching process depends on electrolyte composition and temperature, defects at the surface, and surface morphology. A better control of this process is required to achieve reproducible nanostructures.

Keywords

    low-pressure metal−organic vapor-phase epitaxy, nitrides, quantum wells, semiconducting III−V materials

ASJC Scopus subject areas

Cite this

Pyramid Formation by Etching of InxGa1−xN /GaN Quantum Well Structures Grown on N-face GaN for Nanooptical Light Emitters. / Rossow, Uwe; Sidikejiang, Shawutijiang; Hagag, Samar et al.
In: Physica Status Solidi (B) Basic Research, Vol. 258, No. 10, 2100085, 08.10.2021.

Research output: Contribution to journal › Article › Research › peer review

Rossow, U, Sidikejiang, S, Hagag, S, Horenburg, P, Henning, P, de Vasconcellos Lourenco, R, Bremers, H & Hangleiter, A 2021, 'Pyramid Formation by Etching of InxGa1−xN /GaN Quantum Well Structures Grown on N-face GaN for Nanooptical Light Emitters', Physica Status Solidi (B) Basic Research, vol. 258, no. 10, 2100085. https://doi.org/10.1002/pssb.202100085
Rossow, U., Sidikejiang, S., Hagag, S., Horenburg, P., Henning, P., de Vasconcellos Lourenco, R., Bremers, H., & Hangleiter, A. (2021). Pyramid Formation by Etching of InxGa1−xN /GaN Quantum Well Structures Grown on N-face GaN for Nanooptical Light Emitters. Physica Status Solidi (B) Basic Research, 258(10), Article 2100085. https://doi.org/10.1002/pssb.202100085
Rossow U, Sidikejiang S, Hagag S, Horenburg P, Henning P, de Vasconcellos Lourenco R et al. Pyramid Formation by Etching of InxGa1−xN /GaN Quantum Well Structures Grown on N-face GaN for Nanooptical Light Emitters. Physica Status Solidi (B) Basic Research. 2021 Oct 8;258(10):2100085. Epub 2021 Jul 20. doi: 10.1002/pssb.202100085
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title = "Pyramid Formation by Etching of InxGa1−xN /GaN Quantum Well Structures Grown on N-face GaN for Nanooptical Light Emitters",
abstract = "While growth processes of (Formula presented.) /GaN quantum well (QW) structures on the Ga face of GaN buffer layers are already optimized to obtain high quantum efficiency, the growth on N-face has gained momentum only in the past years. Compared with Ga face (Formula presented.) layers are more stable on N face, and the surface can easily be structured by wet chemical etching, which usually leads to the formation of pyramids on the surface. This allows a new way to realize nanooptical light emitters, which offers the possibility to produce structures with similar emission properties. First, (Formula presented.) /GaN (single or multi-) QW structures on N-face GaN are grown. In a second step, pyramids are formed by KOH etching. Pyramids with smooth side facets of the type (Formula presented.) are demonstrated and sharp tips in the nanometer range can be achieved without any sign of damage. Transmission electron microscopy (TEM) reveals that (Formula presented.) quantum dot-like structures are present in the pyramids and in photoluminescence narrow emission lines are observed. The etching process depends on electrolyte composition and temperature, defects at the surface, and surface morphology. A better control of this process is required to achieve reproducible nanostructures.",
keywords = "low-pressure metal−organic vapor-phase epitaxy, nitrides, quantum wells, semiconducting III−V materials",
author = "Uwe Rossow and Shawutijiang Sidikejiang and Samar Hagag and Philipp Horenburg and Philipp Henning and {de Vasconcellos Lourenco}, Rodrigo and Heiko Bremers and Andreas Hangleiter",
note = "Funding Information: The authors acknowledge F. A. Ketzer for help in PL measurement; Dr. A. Jaros, Dr. H. Spende, Professor Dr. T. Vo{\ss}, and Professor Dr. A. Waag (IHT, TU Braunschweig) for preliminary μ‐photoluminescence and cathodoluminescence (CL) measurements; and Company Zeiss for transmission electron microscopy images. U.R. gratefully acknowledges DAAD for a travelling grant. Furthermore, the authors acknowledge fruitful discussions with Professor Dr. S. K{\"u}ck (PTB), funding by the Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) under Germany's Excellence Strategy, EXC‐2123 QuantumFrontiers, 390 837 967, and finally Physica Status Solidi (PSS) for 60th year of publishing our research. ",
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Download

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T1 - Pyramid Formation by Etching of InxGa1−xN /GaN Quantum Well Structures Grown on N-face GaN for Nanooptical Light Emitters

AU - Rossow, Uwe

AU - Sidikejiang, Shawutijiang

AU - Hagag, Samar

AU - Horenburg, Philipp

AU - Henning, Philipp

AU - de Vasconcellos Lourenco, Rodrigo

AU - Bremers, Heiko

AU - Hangleiter, Andreas

N1 - Funding Information: The authors acknowledge F. A. Ketzer for help in PL measurement; Dr. A. Jaros, Dr. H. Spende, Professor Dr. T. Voß, and Professor Dr. A. Waag (IHT, TU Braunschweig) for preliminary μ‐photoluminescence and cathodoluminescence (CL) measurements; and Company Zeiss for transmission electron microscopy images. U.R. gratefully acknowledges DAAD for a travelling grant. Furthermore, the authors acknowledge fruitful discussions with Professor Dr. S. Kück (PTB), funding by the Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) under Germany's Excellence Strategy, EXC‐2123 QuantumFrontiers, 390 837 967, and finally Physica Status Solidi (PSS) for 60th year of publishing our research.

PY - 2021/10/8

Y1 - 2021/10/8

N2 - While growth processes of (Formula presented.) /GaN quantum well (QW) structures on the Ga face of GaN buffer layers are already optimized to obtain high quantum efficiency, the growth on N-face has gained momentum only in the past years. Compared with Ga face (Formula presented.) layers are more stable on N face, and the surface can easily be structured by wet chemical etching, which usually leads to the formation of pyramids on the surface. This allows a new way to realize nanooptical light emitters, which offers the possibility to produce structures with similar emission properties. First, (Formula presented.) /GaN (single or multi-) QW structures on N-face GaN are grown. In a second step, pyramids are formed by KOH etching. Pyramids with smooth side facets of the type (Formula presented.) are demonstrated and sharp tips in the nanometer range can be achieved without any sign of damage. Transmission electron microscopy (TEM) reveals that (Formula presented.) quantum dot-like structures are present in the pyramids and in photoluminescence narrow emission lines are observed. The etching process depends on electrolyte composition and temperature, defects at the surface, and surface morphology. A better control of this process is required to achieve reproducible nanostructures.

AB - While growth processes of (Formula presented.) /GaN quantum well (QW) structures on the Ga face of GaN buffer layers are already optimized to obtain high quantum efficiency, the growth on N-face has gained momentum only in the past years. Compared with Ga face (Formula presented.) layers are more stable on N face, and the surface can easily be structured by wet chemical etching, which usually leads to the formation of pyramids on the surface. This allows a new way to realize nanooptical light emitters, which offers the possibility to produce structures with similar emission properties. First, (Formula presented.) /GaN (single or multi-) QW structures on N-face GaN are grown. In a second step, pyramids are formed by KOH etching. Pyramids with smooth side facets of the type (Formula presented.) are demonstrated and sharp tips in the nanometer range can be achieved without any sign of damage. Transmission electron microscopy (TEM) reveals that (Formula presented.) quantum dot-like structures are present in the pyramids and in photoluminescence narrow emission lines are observed. The etching process depends on electrolyte composition and temperature, defects at the surface, and surface morphology. A better control of this process is required to achieve reproducible nanostructures.

KW - low-pressure metal−organic vapor-phase epitaxy

KW - nitrides

KW - quantum wells

KW - semiconducting III−V materials

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