Propagation of a magnetic domain wall in the presence of AFM fabricated defects

Research output: Contribution to journal › Conference article › Research › peer review

Authors

  • H. W. Schumacher
  • D. Ravelosona
  • F. Cayssol
  • J. Wunderlich
  • C. Chappert
  • V. Mathet
  • A. Thiaville
  • J. P. Jamet
  • J. Ferré
  • R. J. Haug

Research Organisations

External Research Organisations

  • Universite Paris-Sud XI
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Details

Original languageEnglish
Pages (from-to)2331-2333
Number of pages3
JournalIEEE transactions on magnetics
Volume37
Issue number4 I
Publication statusPublished - 1 Jul 2001
Event8th Joint Magnetism and Magnetic Materials -International Magnetic Conference- (MMM-Intermag) - San Antonio, TX, United States
Duration: 7 Jan 2001 → 11 Jan 2001

Abstract

We can control the magnetization reversal process in Pt/Co/Pt ultra thin film devices by using mesoscopic defects fabricated by atomic force microscope (AFM) lithography. Holes and grooves locally cutting the Co layer are written by direct mechanical indentation of the metal samples by the AFM tip. The smallest lateral feature size of these artificial structures (down to 20 nm for a hole) is comparable to the intrinsic Barkhausen length (∼25 nm) of the films. The influence of the AFM fabricated structures on the magnetization reversal process in micron sized devices was studied by Kerr microscopy and extraordinary Hall effect measurements. Single point defects act as mesosocopic domain wall pinning centers, while lines effectively block the domain wall propagation. Study of the influence of well characterized defects should help understand better the magnetization reversal processes in our films.

Keywords

    AFM lithography, Domain wall pinning, Extraordinary hall effect, Magnetization reversal dynamics

ASJC Scopus subject areas

Cite this

Propagation of a magnetic domain wall in the presence of AFM fabricated defects. / Schumacher, H. W.; Ravelosona, D.; Cayssol, F. et al.
In: IEEE transactions on magnetics, Vol. 37, No. 4 I, 01.07.2001, p. 2331-2333.

Research output: Contribution to journal › Conference article › Research › peer review

Schumacher, HW, Ravelosona, D, Cayssol, F, Wunderlich, J, Chappert, C, Mathet, V, Thiaville, A, Jamet, JP, Ferré, J & Haug, RJ 2001, 'Propagation of a magnetic domain wall in the presence of AFM fabricated defects', IEEE transactions on magnetics, vol. 37, no. 4 I, pp. 2331-2333. https://doi.org/10.1109/20.951163
Schumacher, H. W., Ravelosona, D., Cayssol, F., Wunderlich, J., Chappert, C., Mathet, V., Thiaville, A., Jamet, J. P., Ferré, J., & Haug, R. J. (2001). Propagation of a magnetic domain wall in the presence of AFM fabricated defects. IEEE transactions on magnetics, 37(4 I), 2331-2333. https://doi.org/10.1109/20.951163
Schumacher HW, Ravelosona D, Cayssol F, Wunderlich J, Chappert C, Mathet V et al. Propagation of a magnetic domain wall in the presence of AFM fabricated defects. IEEE transactions on magnetics. 2001 Jul 1;37(4 I):2331-2333. doi: 10.1109/20.951163
Schumacher, H. W. ; Ravelosona, D. ; Cayssol, F. et al. / Propagation of a magnetic domain wall in the presence of AFM fabricated defects. In: IEEE transactions on magnetics. 2001 ; Vol. 37, No. 4 I. pp. 2331-2333.
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T1 - Propagation of a magnetic domain wall in the presence of AFM fabricated defects

AU - Schumacher, H. W.

AU - Ravelosona, D.

AU - Cayssol, F.

AU - Wunderlich, J.

AU - Chappert, C.

AU - Mathet, V.

AU - Thiaville, A.

AU - Jamet, J. P.

AU - Ferré, J.

AU - Haug, R. J.

N1 - Funding information: Manuscript received October 12, 2000. This work was supported by the European Union TMR network SUB-MAGDEV and the Japanese NEDO grant, “Nanopatterned magnetic systems.” H. W. Schumacher, D. Ravelosona, F. Cayssol, J. Wunderlich, C. Chappert and C. Mathet are with Institut d’Elkectronique Fondamentale, UMR CNRS 8622, Université Paris Sud, 91405 Orsay, France (e-mail: schumach@ief.u-psud.fr). A. Thiaville, J.-P. Jamet and J. Ferré are with Laboratoire de Physique des solides, UMR CNRS 8602, Université Paris Sud, 91405 Orsay, France. R. J. Haug is with Institut für Festkörperphysik, Universität Hannover, Ap-pelstr. 2, 30167 Hannover, Germany. Publisher Item Identifier S 0018-9464(01)06777-2.

PY - 2001/7/1

Y1 - 2001/7/1

N2 - We can control the magnetization reversal process in Pt/Co/Pt ultra thin film devices by using mesoscopic defects fabricated by atomic force microscope (AFM) lithography. Holes and grooves locally cutting the Co layer are written by direct mechanical indentation of the metal samples by the AFM tip. The smallest lateral feature size of these artificial structures (down to 20 nm for a hole) is comparable to the intrinsic Barkhausen length (∼25 nm) of the films. The influence of the AFM fabricated structures on the magnetization reversal process in micron sized devices was studied by Kerr microscopy and extraordinary Hall effect measurements. Single point defects act as mesosocopic domain wall pinning centers, while lines effectively block the domain wall propagation. Study of the influence of well characterized defects should help understand better the magnetization reversal processes in our films.

AB - We can control the magnetization reversal process in Pt/Co/Pt ultra thin film devices by using mesoscopic defects fabricated by atomic force microscope (AFM) lithography. Holes and grooves locally cutting the Co layer are written by direct mechanical indentation of the metal samples by the AFM tip. The smallest lateral feature size of these artificial structures (down to 20 nm for a hole) is comparable to the intrinsic Barkhausen length (∼25 nm) of the films. The influence of the AFM fabricated structures on the magnetization reversal process in micron sized devices was studied by Kerr microscopy and extraordinary Hall effect measurements. Single point defects act as mesosocopic domain wall pinning centers, while lines effectively block the domain wall propagation. Study of the influence of well characterized defects should help understand better the magnetization reversal processes in our films.

KW - AFM lithography

KW - Domain wall pinning

KW - Extraordinary hall effect

KW - Magnetization reversal dynamics

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U2 - 10.1109/20.951163

DO - 10.1109/20.951163

M3 - Conference article

AN - SCOPUS:0035385945

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SP - 2331

EP - 2333

JO - IEEE transactions on magnetics

JF - IEEE transactions on magnetics

SN - 0018-9464

IS - 4 I

T2 - 8th Joint Magnetism and Magnetic Materials -International Magnetic Conference- (MMM-Intermag)

Y2 - 7 January 2001 through 11 January 2001

ER -

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