Processing and characterization of monolithic passive-matrix GaN-based MicroLED arrays with pixel sizes from 5 to 50 μm

Research output: Contribution to journalArticleResearchpeer review

Authors

  • Steffen Bornemann
  • Jan Gulink
  • Victor Moro
  • Joan Canals Gil
  • Stefan Wolter
  • Georg Schottler
  • Daria Bezshlyakh
  • Joan Daniel Prades
  • Angel Dieguez
  • Andreas Waag

External Research Organisations

  • Technische Universität Braunschweig
  • Universitat de Barcelona
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Details

Original languageEnglish
Article number8200209
JournalIEEE photonics journal
Volume13
Issue number5
Publication statusPublished - 20 Aug 2021
Externally publishedYes

Abstract

MicroLED arrays with the capability of switching each pixel separately with high frequency can serve as structured micro-illumination light engines for applications in sensing, optogenetics, microscopy and many others. We describe a scalable chip process chain for the fabrication of passive-matrix microLED arrays, which were integrated with PCB-based driving electronics. The arrays were produced by deep-etching of conventional planar LED structures on sapphire, followed by filling and planarization steps. The pixel resolution lies in the range of 254 to 2540 pixels-per-inch (ppi), the arrays consist of 32 x 32 pixels. Optical output powers up to 50 μW per pixel were measured. In comparison to CMOS-based approaches, the presented technology is a simplified strategy to produce microLED arrays with high pixel counts.

Keywords

    III-V semiconductor materials, Inorganic light-emitting diodes, Micro-light emitting diode array

ASJC Scopus subject areas

Cite this

Processing and characterization of monolithic passive-matrix GaN-based MicroLED arrays with pixel sizes from 5 to 50 μm. / Bornemann, Steffen; Gulink, Jan; Moro, Victor et al.
In: IEEE photonics journal, Vol. 13, No. 5, 8200209 , 20.08.2021.

Research output: Contribution to journalArticleResearchpeer review

Bornemann, S, Gulink, J, Moro, V, Gil, JC, Wolter, S, Schottler, G, Bezshlyakh, D, Prades, JD, Dieguez, A & Waag, A 2021, 'Processing and characterization of monolithic passive-matrix GaN-based MicroLED arrays with pixel sizes from 5 to 50 μm', IEEE photonics journal, vol. 13, no. 5, 8200209 . https://doi.org/10.1109/JPHOT.2021.3106584
Bornemann, S., Gulink, J., Moro, V., Gil, J. C., Wolter, S., Schottler, G., Bezshlyakh, D., Prades, J. D., Dieguez, A., & Waag, A. (2021). Processing and characterization of monolithic passive-matrix GaN-based MicroLED arrays with pixel sizes from 5 to 50 μm. IEEE photonics journal, 13(5), Article 8200209 . https://doi.org/10.1109/JPHOT.2021.3106584
Bornemann S, Gulink J, Moro V, Gil JC, Wolter S, Schottler G et al. Processing and characterization of monolithic passive-matrix GaN-based MicroLED arrays with pixel sizes from 5 to 50 μm. IEEE photonics journal. 2021 Aug 20;13(5):8200209 . doi: 10.1109/JPHOT.2021.3106584
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title = "Processing and characterization of monolithic passive-matrix GaN-based MicroLED arrays with pixel sizes from 5 to 50 μm",
abstract = "MicroLED arrays with the capability of switching each pixel separately with high frequency can serve as structured micro-illumination light engines for applications in sensing, optogenetics, microscopy and many others. We describe a scalable chip process chain for the fabrication of passive-matrix microLED arrays, which were integrated with PCB-based driving electronics. The arrays were produced by deep-etching of conventional planar LED structures on sapphire, followed by filling and planarization steps. The pixel resolution lies in the range of 254 to 2540 pixels-per-inch (ppi), the arrays consist of 32 x 32 pixels. Optical output powers up to 50 μW per pixel were measured. In comparison to CMOS-based approaches, the presented technology is a simplified strategy to produce microLED arrays with high pixel counts. ",
keywords = "III-V semiconductor materials, Inorganic light-emitting diodes, Micro-light emitting diode array",
author = "Steffen Bornemann and Jan Gulink and Victor Moro and Gil, {Joan Canals} and Stefan Wolter and Georg Schottler and Daria Bezshlyakh and Prades, {Joan Daniel} and Angel Dieguez and Andreas Waag",
note = "Funding Information: Manuscript received July 14, 2021; revised August 13, 2021; accepted August 16, 2021. Date of publication August 20, 2021; date of current version September 21, 2021. This work was was supported in part by within the European projects ChipScope and SMILE, which are funded by the European Union{\textquoteright}s Horizon 2020 research and innovation program under Grant Agreements 737089 and 952135. The work was further supported in part by the Deutsche Forschungsge-meinschaft (DFG, German Research Foundation) under Germany{\textquoteright}s Excellence Strategy – EXC-2123 QuantumFrontiers – 390837967 and within the Cluster of Excellence PhoenixD (EXC 2122, Project ID 390833453). (Corresponding authors: Steffen Bornemann; Andreas Waag.) Steffen Bornemann, Jan G{\"u}link, Stefan Wolter, Georg Sch{\"o}ttler, Daria Bezshlyakh, and Andreas Waag are with the Institute of Semiconductor Technology, Technische Universit{\"a}t Braunschweig, 38106 Braunschweig, Germany, and also with the Laboratory for Emerging Nanometrology, Technische Universit{\"a}t Braunschweig, 38106 Braunschweig, Germany (e-mail: steffen.bornemann@tu-braun schweig.de; j.guelink@tu-braunschweig.de; stefan.wolter@tu-braunschweig. de; g.schoettler@tu-braunschweig.de; d.bezshlyakh@tu-braunschweig.de; a.waag@tu-braunschweig.de).",
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T1 - Processing and characterization of monolithic passive-matrix GaN-based MicroLED arrays with pixel sizes from 5 to 50 μm

AU - Bornemann, Steffen

AU - Gulink, Jan

AU - Moro, Victor

AU - Gil, Joan Canals

AU - Wolter, Stefan

AU - Schottler, Georg

AU - Bezshlyakh, Daria

AU - Prades, Joan Daniel

AU - Dieguez, Angel

AU - Waag, Andreas

N1 - Funding Information: Manuscript received July 14, 2021; revised August 13, 2021; accepted August 16, 2021. Date of publication August 20, 2021; date of current version September 21, 2021. This work was was supported in part by within the European projects ChipScope and SMILE, which are funded by the European Union’s Horizon 2020 research and innovation program under Grant Agreements 737089 and 952135. The work was further supported in part by the Deutsche Forschungsge-meinschaft (DFG, German Research Foundation) under Germany’s Excellence Strategy – EXC-2123 QuantumFrontiers – 390837967 and within the Cluster of Excellence PhoenixD (EXC 2122, Project ID 390833453). (Corresponding authors: Steffen Bornemann; Andreas Waag.) Steffen Bornemann, Jan Gülink, Stefan Wolter, Georg Schöttler, Daria Bezshlyakh, and Andreas Waag are with the Institute of Semiconductor Technology, Technische Universität Braunschweig, 38106 Braunschweig, Germany, and also with the Laboratory for Emerging Nanometrology, Technische Universität Braunschweig, 38106 Braunschweig, Germany (e-mail: steffen.bornemann@tu-braun schweig.de; j.guelink@tu-braunschweig.de; stefan.wolter@tu-braunschweig. de; g.schoettler@tu-braunschweig.de; d.bezshlyakh@tu-braunschweig.de; a.waag@tu-braunschweig.de).

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Y1 - 2021/8/20

N2 - MicroLED arrays with the capability of switching each pixel separately with high frequency can serve as structured micro-illumination light engines for applications in sensing, optogenetics, microscopy and many others. We describe a scalable chip process chain for the fabrication of passive-matrix microLED arrays, which were integrated with PCB-based driving electronics. The arrays were produced by deep-etching of conventional planar LED structures on sapphire, followed by filling and planarization steps. The pixel resolution lies in the range of 254 to 2540 pixels-per-inch (ppi), the arrays consist of 32 x 32 pixels. Optical output powers up to 50 μW per pixel were measured. In comparison to CMOS-based approaches, the presented technology is a simplified strategy to produce microLED arrays with high pixel counts.

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KW - III-V semiconductor materials

KW - Inorganic light-emitting diodes

KW - Micro-light emitting diode array

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