Details
Original language | English |
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Title of host publication | Magnetic Materials Processes and Devices 11 |
Publisher | Electrochemical Society, Inc. |
Pages | 93-104 |
Number of pages | 12 |
Edition | 34 |
ISBN (print) | 9781607682448 |
Publication status | Published - 2010 |
Event | 11th International Symposium on Magnetic Materials, Processes and Devices - 218th ECS Meeting - Las Vegas, NV, United States Duration: 11 Oct 2010 → 12 Oct 2010 |
Publication series
Name | ECS Transactions |
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Number | 34 |
Volume | 33 |
ISSN (Print) | 1938-5862 |
ISSN (electronic) | 1938-6737 |
Abstract
Magnetic magnesium (Mg) is a new storage medium for gentelligent™ products and requires a reflective layer on its surface to enable a readout process. The readout process is executed by a magneto-optical method based on the KERR effect. A small rotation of a reflected light plane becomes visible applying a soft magnetic 5 μ thick NiFe81/19 layer on top of the magnetic Mg storage medium which mirrors the magnetization states in the storage material. For the electrodeposition of a NiFe81/19 layer on the magnetic Mg surface, the combination of physical vapor deposition (PVD) and electroplating is applied. The thin NiFe81/19 layer deposited by PVD serves as a protection film on the sample surface to avoid etching during electroplating. The electroplating parameters are investigated and optimized to achieve a required concentration of Fe in the deposited layer.
ASJC Scopus subject areas
- Engineering(all)
- General Engineering
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Magnetic Materials Processes and Devices 11. 34. ed. Electrochemical Society, Inc., 2010. p. 93-104 (ECS Transactions; Vol. 33, No. 34).
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - Process development of an electroplated permalloy layer on magnetic magnesium for gentelligent™ products
AU - Belski, A.
AU - Wurz, M. C.
AU - Rissing, L.
PY - 2010
Y1 - 2010
N2 - Magnetic magnesium (Mg) is a new storage medium for gentelligent™ products and requires a reflective layer on its surface to enable a readout process. The readout process is executed by a magneto-optical method based on the KERR effect. A small rotation of a reflected light plane becomes visible applying a soft magnetic 5 μ thick NiFe81/19 layer on top of the magnetic Mg storage medium which mirrors the magnetization states in the storage material. For the electrodeposition of a NiFe81/19 layer on the magnetic Mg surface, the combination of physical vapor deposition (PVD) and electroplating is applied. The thin NiFe81/19 layer deposited by PVD serves as a protection film on the sample surface to avoid etching during electroplating. The electroplating parameters are investigated and optimized to achieve a required concentration of Fe in the deposited layer.
AB - Magnetic magnesium (Mg) is a new storage medium for gentelligent™ products and requires a reflective layer on its surface to enable a readout process. The readout process is executed by a magneto-optical method based on the KERR effect. A small rotation of a reflected light plane becomes visible applying a soft magnetic 5 μ thick NiFe81/19 layer on top of the magnetic Mg storage medium which mirrors the magnetization states in the storage material. For the electrodeposition of a NiFe81/19 layer on the magnetic Mg surface, the combination of physical vapor deposition (PVD) and electroplating is applied. The thin NiFe81/19 layer deposited by PVD serves as a protection film on the sample surface to avoid etching during electroplating. The electroplating parameters are investigated and optimized to achieve a required concentration of Fe in the deposited layer.
UR - http://www.scopus.com/inward/record.url?scp=84857403809&partnerID=8YFLogxK
U2 - 10.1149/1.3573591
DO - 10.1149/1.3573591
M3 - Conference contribution
AN - SCOPUS:84857403809
SN - 9781607682448
T3 - ECS Transactions
SP - 93
EP - 104
BT - Magnetic Materials Processes and Devices 11
PB - Electrochemical Society, Inc.
T2 - 11th International Symposium on Magnetic Materials, Processes and Devices - 218th ECS Meeting
Y2 - 11 October 2010 through 12 October 2010
ER -