Proceedings of the 1995 E-MRS Spring Meeting

Research output: Chapter in book/report/conference proceeding › Contribution to book/anthology › Research › peer review

Authors

  • H. J. Osten

External Research Organisations

  • Leibniz Institute for High Performance Microelectronics (IHP)
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Details

Original languageEnglish
Title of host publicationSymposium N
Subtitle of host publicationCarbon, Hydrogen, Nitrogen, and Oxygen in Silicon and in Other Elemental Semiconductors
Pages[d]294p
Edition1-3
Publication statusPublished - Jan 1996
Externally publishedYes

Publication series

NameMaterials science & engineering. B, Solid-state materials for advanced technology
Number1-3
VolumeB36
ISSN (Print)0921-5107

Abstract

The growth and properties of Si1-yCy and Si1-x-yGexCy alloys pseudomorphically strained on Si(001) will be reviewed. Although the bulk solubility of carbon in silicon is small, epitaxial layers of more than 1 at.%C can be fabricated. Most of the incorporated C atoms occupy substitutional positions and, therefore, allow strain manipulation; including the growth of an inversely strained Si1-x-yGexCy layer. The mechanical properties as well as the influence of C atoms on band structure will be discussed. Finally we will present an atomistic picture of a fully strain-compensated SiGeC layer.

ASJC Scopus subject areas

Cite this

Proceedings of the 1995 E-MRS Spring Meeting. / Osten, H. J.
Symposium N: Carbon, Hydrogen, Nitrogen, and Oxygen in Silicon and in Other Elemental Semiconductors. 1-3. ed. 1996. p. [d]294p (Materials science & engineering. B, Solid-state materials for advanced technology; Vol. B36, No. 1-3).

Research output: Chapter in book/report/conference proceeding › Contribution to book/anthology › Research › peer review

Osten, HJ 1996, Proceedings of the 1995 E-MRS Spring Meeting. in Symposium N: Carbon, Hydrogen, Nitrogen, and Oxygen in Silicon and in Other Elemental Semiconductors. 1-3 edn, Materials science & engineering. B, Solid-state materials for advanced technology, no. 1-3, vol. B36, pp. [d]294p.
Osten, H. J. (1996). Proceedings of the 1995 E-MRS Spring Meeting. In Symposium N: Carbon, Hydrogen, Nitrogen, and Oxygen in Silicon and in Other Elemental Semiconductors (1-3 ed., pp. [d]294p). (Materials science & engineering. B, Solid-state materials for advanced technology; Vol. B36, No. 1-3).
Osten HJ. Proceedings of the 1995 E-MRS Spring Meeting. In Symposium N: Carbon, Hydrogen, Nitrogen, and Oxygen in Silicon and in Other Elemental Semiconductors. 1-3 ed. 1996. p. [d]294p. (Materials science & engineering. B, Solid-state materials for advanced technology; 1-3).
Osten, H. J. / Proceedings of the 1995 E-MRS Spring Meeting. Symposium N: Carbon, Hydrogen, Nitrogen, and Oxygen in Silicon and in Other Elemental Semiconductors. 1-3. ed. 1996. pp. [d]294p (Materials science & engineering. B, Solid-state materials for advanced technology; 1-3).
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