Problems of contamination prior and during SI-MBE

Research output: Chapter in book/report/conference proceedingConference contributionResearchpeer review

Authors

  • G. Lippert
  • D. Krueger
  • H. P. Zeindl
  • J. Ramm
  • E. Bugiel
  • H. J. Osten

External Research Organisations

  • Leibniz Institute for High Performance Microelectronics (IHP)
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Details

Original languageEnglish
Title of host publicationSurface Chemical Cleaning and Passivation for Semiconductor Processing
EditorsGregg S. Higashi, Eugene A. Irene, Tadahiro Ohmi
Pages85-90
Number of pages6
Publication statusPublished - 1993
Externally publishedYes
Event1993 Spring Meeting of the Materials Research Society - San Francisco, United States
Duration: 13 Apr 199315 Apr 1993

Publication series

NameMaterials Research Society Symposium Proceedings
Volume315
ISSN (Print)0272-9172

Abstract

The deposition of perfect growing layers requires an atomically clean surface. In this paper we will describe a new in situ cleaning technique which is able to reduce the temperature/time load of silicon substrates significantly. First we will investigate the efficiency of the in situ UV/ozone cleaning immediately before deposition. Such an UV/ozone treatment lowers the level of impurities below the detection limit of in situ XPS. The known recontamination if exposing to air after ex situ cleaning is prevented by this in situ technique. Nevertheless a significant contamination within the UHV chamber is detected by SIMS. A comparison of various UHV pumping systems (base pressure in the range of 10-8 Pa) shows the specific influence on recontamination at an atomically clean surface. A blocking mechanism by a thin oxide layer below (0.1 ML) to avoid the growth of stacking faults within an epitaxial silicon layer was successfully tested.

ASJC Scopus subject areas

Cite this

Problems of contamination prior and during SI-MBE. / Lippert, G.; Krueger, D.; Zeindl, H. P. et al.
Surface Chemical Cleaning and Passivation for Semiconductor Processing. ed. / Gregg S. Higashi; Eugene A. Irene; Tadahiro Ohmi. 1993. p. 85-90 (Materials Research Society Symposium Proceedings; Vol. 315).

Research output: Chapter in book/report/conference proceedingConference contributionResearchpeer review

Lippert, G, Krueger, D, Zeindl, HP, Ramm, J, Bugiel, E & Osten, HJ 1993, Problems of contamination prior and during SI-MBE. in GS Higashi, EA Irene & T Ohmi (eds), Surface Chemical Cleaning and Passivation for Semiconductor Processing. Materials Research Society Symposium Proceedings, vol. 315, pp. 85-90, 1993 Spring Meeting of the Materials Research Society, San Francisco, California, United States, 13 Apr 1993.
Lippert, G., Krueger, D., Zeindl, H. P., Ramm, J., Bugiel, E., & Osten, H. J. (1993). Problems of contamination prior and during SI-MBE. In G. S. Higashi, E. A. Irene, & T. Ohmi (Eds.), Surface Chemical Cleaning and Passivation for Semiconductor Processing (pp. 85-90). (Materials Research Society Symposium Proceedings; Vol. 315).
Lippert G, Krueger D, Zeindl HP, Ramm J, Bugiel E, Osten HJ. Problems of contamination prior and during SI-MBE. In Higashi GS, Irene EA, Ohmi T, editors, Surface Chemical Cleaning and Passivation for Semiconductor Processing. 1993. p. 85-90. (Materials Research Society Symposium Proceedings).
Lippert, G. ; Krueger, D. ; Zeindl, H. P. et al. / Problems of contamination prior and during SI-MBE. Surface Chemical Cleaning and Passivation for Semiconductor Processing. editor / Gregg S. Higashi ; Eugene A. Irene ; Tadahiro Ohmi. 1993. pp. 85-90 (Materials Research Society Symposium Proceedings).
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