Details
| Original language | English |
|---|---|
| Title of host publication | Surface Chemical Cleaning and Passivation for Semiconductor Processing |
| Editors | Gregg S. Higashi, Eugene A. Irene, Tadahiro Ohmi |
| Pages | 85-90 |
| Number of pages | 6 |
| Publication status | Published - 1993 |
| Externally published | Yes |
| Event | 1993 Spring Meeting of the Materials Research Society - San Francisco, United States Duration: 13 Apr 1993 → 15 Apr 1993 |
Publication series
| Name | Materials Research Society Symposium Proceedings |
|---|---|
| Volume | 315 |
| ISSN (Print) | 0272-9172 |
Abstract
The deposition of perfect growing layers requires an atomically clean surface. In this paper we will describe a new in situ cleaning technique which is able to reduce the temperature/time load of silicon substrates significantly. First we will investigate the efficiency of the in situ UV/ozone cleaning immediately before deposition. Such an UV/ozone treatment lowers the level of impurities below the detection limit of in situ XPS. The known recontamination if exposing to air after ex situ cleaning is prevented by this in situ technique. Nevertheless a significant contamination within the UHV chamber is detected by SIMS. A comparison of various UHV pumping systems (base pressure in the range of 10-8 Pa) shows the specific influence on recontamination at an atomically clean surface. A blocking mechanism by a thin oxide layer below (0.1 ML) to avoid the growth of stacking faults within an epitaxial silicon layer was successfully tested.
ASJC Scopus subject areas
- Materials Science(all)
- General Materials Science
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Mechanics of Materials
- Engineering(all)
- Mechanical Engineering
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Surface Chemical Cleaning and Passivation for Semiconductor Processing. ed. / Gregg S. Higashi; Eugene A. Irene; Tadahiro Ohmi. 1993. p. 85-90 (Materials Research Society Symposium Proceedings; Vol. 315).
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - Problems of contamination prior and during SI-MBE
AU - Lippert, G.
AU - Krueger, D.
AU - Zeindl, H. P.
AU - Ramm, J.
AU - Bugiel, E.
AU - Osten, H. J.
PY - 1993
Y1 - 1993
N2 - The deposition of perfect growing layers requires an atomically clean surface. In this paper we will describe a new in situ cleaning technique which is able to reduce the temperature/time load of silicon substrates significantly. First we will investigate the efficiency of the in situ UV/ozone cleaning immediately before deposition. Such an UV/ozone treatment lowers the level of impurities below the detection limit of in situ XPS. The known recontamination if exposing to air after ex situ cleaning is prevented by this in situ technique. Nevertheless a significant contamination within the UHV chamber is detected by SIMS. A comparison of various UHV pumping systems (base pressure in the range of 10-8 Pa) shows the specific influence on recontamination at an atomically clean surface. A blocking mechanism by a thin oxide layer below (0.1 ML) to avoid the growth of stacking faults within an epitaxial silicon layer was successfully tested.
AB - The deposition of perfect growing layers requires an atomically clean surface. In this paper we will describe a new in situ cleaning technique which is able to reduce the temperature/time load of silicon substrates significantly. First we will investigate the efficiency of the in situ UV/ozone cleaning immediately before deposition. Such an UV/ozone treatment lowers the level of impurities below the detection limit of in situ XPS. The known recontamination if exposing to air after ex situ cleaning is prevented by this in situ technique. Nevertheless a significant contamination within the UHV chamber is detected by SIMS. A comparison of various UHV pumping systems (base pressure in the range of 10-8 Pa) shows the specific influence on recontamination at an atomically clean surface. A blocking mechanism by a thin oxide layer below (0.1 ML) to avoid the growth of stacking faults within an epitaxial silicon layer was successfully tested.
UR - http://www.scopus.com/inward/record.url?scp=0027802041&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:0027802041
SN - 1558992138
T3 - Materials Research Society Symposium Proceedings
SP - 85
EP - 90
BT - Surface Chemical Cleaning and Passivation for Semiconductor Processing
A2 - Higashi, Gregg S.
A2 - Irene, Eugene A.
A2 - Ohmi, Tadahiro
T2 - 1993 Spring Meeting of the Materials Research Society
Y2 - 13 April 1993 through 15 April 1993
ER -