Details
| Original language | English |
|---|---|
| Title of host publication | 2010 11th International Conference on Thermal, Mechanical and Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems, EuroSimE 2010 |
| Publication status | Published - 2010 |
| Event | 2010 11th International Conference on Thermal, Mechanical and Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems, EuroSimE 2010 - Bordeaux, France Duration: 26 Apr 2010 → 28 Apr 2010 |
Publication series
| Name | 2010 11th International Conference on Thermal, Mechanical and Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems, EuroSimE 2010 |
|---|
Abstract
In ULSI metallization with tantalum barriers the highest stress is generally induced in the barrier, because in the structure tantalum has the highest young modulus compared to the other materials. Regarding this barrier cracking can occur due to the high stress values. In this work possible approaches to simulate cracking appearances are selected from the literature and their feasibility will be investigated. The principles of the cracking come from different science discipline, because only a few concerns about fracture mechanics regarding thin-film application exist so far. In this investigation the first principal stress criterion is implemented and used for simulation of barrier cracking in a simplified line model for the first time.
ASJC Scopus subject areas
- Computer Science(all)
- Computational Theory and Mathematics
- Engineering(all)
- Electrical and Electronic Engineering
- Mathematics(all)
- Theoretical Computer Science
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2010 11th International Conference on Thermal, Mechanical and Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems, EuroSimE 2010. 2010. 5464617 (2010 11th International Conference on Thermal, Mechanical and Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems, EuroSimE 2010).
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - Principles for simulation of barrier cracking due to high stress
AU - Ciptokusumo, Johar
AU - Weide-Zaage, Kirsten
AU - Aubel, Oliver
N1 - Copyright: Copyright 2010 Elsevier B.V., All rights reserved.
PY - 2010
Y1 - 2010
N2 - In ULSI metallization with tantalum barriers the highest stress is generally induced in the barrier, because in the structure tantalum has the highest young modulus compared to the other materials. Regarding this barrier cracking can occur due to the high stress values. In this work possible approaches to simulate cracking appearances are selected from the literature and their feasibility will be investigated. The principles of the cracking come from different science discipline, because only a few concerns about fracture mechanics regarding thin-film application exist so far. In this investigation the first principal stress criterion is implemented and used for simulation of barrier cracking in a simplified line model for the first time.
AB - In ULSI metallization with tantalum barriers the highest stress is generally induced in the barrier, because in the structure tantalum has the highest young modulus compared to the other materials. Regarding this barrier cracking can occur due to the high stress values. In this work possible approaches to simulate cracking appearances are selected from the literature and their feasibility will be investigated. The principles of the cracking come from different science discipline, because only a few concerns about fracture mechanics regarding thin-film application exist so far. In this investigation the first principal stress criterion is implemented and used for simulation of barrier cracking in a simplified line model for the first time.
UR - http://www.scopus.com/inward/record.url?scp=77953718803&partnerID=8YFLogxK
U2 - 10.1109/ESIME.2010.5464617
DO - 10.1109/ESIME.2010.5464617
M3 - Conference contribution
AN - SCOPUS:77953718803
SN - 9781424470266
T3 - 2010 11th International Conference on Thermal, Mechanical and Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems, EuroSimE 2010
BT - 2010 11th International Conference on Thermal, Mechanical and Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems, EuroSimE 2010
T2 - 2010 11th International Conference on Thermal, Mechanical and Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems, EuroSimE 2010
Y2 - 26 April 2010 through 28 April 2010
ER -