Details
| Original language | English |
|---|---|
| Article number | 6809846 |
| Pages (from-to) | 1018-1024 |
| Number of pages | 7 |
| Journal | IEEE journal of photovoltaics |
| Volume | 4 |
| Issue number | 4 |
| Early online date | 2 May 2014 |
| Publication status | Published - Jul 2014 |
Abstract
We demonstrate the fabrication of heterojunction solar cells after laser-bonding the passivated rear side of a crystalline silicon wafer to a metallized glass carrier. All front-side processing including texturization, passivation, junction formation, indium tin oxide deposition, as well as the cells' front-side metallization are done at the module level. We reach efficiencies up to 20% with an open-circuit voltage of 701 mV. Laser-fired and bonding contacts show a surface recombination velocity of 2400 cm/s, their specific contact resistance is 0.85 m Ω ·cm2, and their tear-off stress is 27.6 kPa.
Keywords
- Contact recombination velocity, heterojunction, hybrid silicon, laser-fired and bonding contacts (LFBCs), module-level processing, silicone
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Electrical and Electronic Engineering
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In: IEEE journal of photovoltaics, Vol. 4, No. 4, 6809846, 07.2014, p. 1018-1024.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Principle of module-level processing demonstrated at single a-Si:H/c-Si Heterojunction solar cells
AU - Petermann, Jan Hendrik
AU - Schulte-Huxel, Henning
AU - Steckenreiter, Verena
AU - Kajari-Schröder, Sarah
AU - Brendel, Rolf
PY - 2014/7
Y1 - 2014/7
N2 - We demonstrate the fabrication of heterojunction solar cells after laser-bonding the passivated rear side of a crystalline silicon wafer to a metallized glass carrier. All front-side processing including texturization, passivation, junction formation, indium tin oxide deposition, as well as the cells' front-side metallization are done at the module level. We reach efficiencies up to 20% with an open-circuit voltage of 701 mV. Laser-fired and bonding contacts show a surface recombination velocity of 2400 cm/s, their specific contact resistance is 0.85 m Ω ·cm2, and their tear-off stress is 27.6 kPa.
AB - We demonstrate the fabrication of heterojunction solar cells after laser-bonding the passivated rear side of a crystalline silicon wafer to a metallized glass carrier. All front-side processing including texturization, passivation, junction formation, indium tin oxide deposition, as well as the cells' front-side metallization are done at the module level. We reach efficiencies up to 20% with an open-circuit voltage of 701 mV. Laser-fired and bonding contacts show a surface recombination velocity of 2400 cm/s, their specific contact resistance is 0.85 m Ω ·cm2, and their tear-off stress is 27.6 kPa.
KW - Contact recombination velocity
KW - heterojunction
KW - hybrid silicon
KW - laser-fired and bonding contacts (LFBCs)
KW - module-level processing
KW - silicone
UR - http://www.scopus.com/inward/record.url?scp=84903313254&partnerID=8YFLogxK
U2 - 10.1109/JPHOTOV.2014.2314576
DO - 10.1109/JPHOTOV.2014.2314576
M3 - Article
AN - SCOPUS:84903313254
VL - 4
SP - 1018
EP - 1024
JO - IEEE journal of photovoltaics
JF - IEEE journal of photovoltaics
SN - 2156-3381
IS - 4
M1 - 6809846
ER -