Details
| Original language | English |
|---|---|
| Pages (from-to) | 2050-2053 |
| Number of pages | 4 |
| Journal | Physica Status Solidi (C) Current Topics in Solid State Physics |
| Volume | 9 |
| Issue number | 10-11 |
| Publication status | Published - Oct 2012 |
Abstract
Development of surface morphology in Si molecular beam epitaxy on mesa-structured Si(111) at temperatures around the (7x7) -"1x1" surface phase transition was studied using atomic force microscopy. Significant changes in surface morphology were found for a small increase in temperature near the surface phase transition accompanied by a strong increase in step-free area dimension. This will be discussed with regard to the simultaneous appearance of the two surface phases under certain condition and their specific influence on the growth behaviour. Small triangular islands and voids appeared after growth at 1080 K indicating surface instability of larger step-free areas. Growth at 1120 K with a rate of 1 nm/min results in the formation of atomically step-free surface over 10x10 μm 2 mesas without any irregularities.
Keywords
- Epitaxy, Mesa, Silicon, Surface
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Condensed Matter Physics
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In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 9, No. 10-11, 10.2012, p. 2050-2053.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Preparation of large step-free mesas on Si(111) by molecular beam epitaxy
AU - Fissel, Andreas
AU - Krügener, Jan
AU - Osten, H. Jörg
PY - 2012/10
Y1 - 2012/10
N2 - Development of surface morphology in Si molecular beam epitaxy on mesa-structured Si(111) at temperatures around the (7x7) -"1x1" surface phase transition was studied using atomic force microscopy. Significant changes in surface morphology were found for a small increase in temperature near the surface phase transition accompanied by a strong increase in step-free area dimension. This will be discussed with regard to the simultaneous appearance of the two surface phases under certain condition and their specific influence on the growth behaviour. Small triangular islands and voids appeared after growth at 1080 K indicating surface instability of larger step-free areas. Growth at 1120 K with a rate of 1 nm/min results in the formation of atomically step-free surface over 10x10 μm 2 mesas without any irregularities.
AB - Development of surface morphology in Si molecular beam epitaxy on mesa-structured Si(111) at temperatures around the (7x7) -"1x1" surface phase transition was studied using atomic force microscopy. Significant changes in surface morphology were found for a small increase in temperature near the surface phase transition accompanied by a strong increase in step-free area dimension. This will be discussed with regard to the simultaneous appearance of the two surface phases under certain condition and their specific influence on the growth behaviour. Small triangular islands and voids appeared after growth at 1080 K indicating surface instability of larger step-free areas. Growth at 1120 K with a rate of 1 nm/min results in the formation of atomically step-free surface over 10x10 μm 2 mesas without any irregularities.
KW - Epitaxy
KW - Mesa
KW - Silicon
KW - Surface
UR - http://www.scopus.com/inward/record.url?scp=84867958612&partnerID=8YFLogxK
U2 - 10.1002/pssc.201200139
DO - 10.1002/pssc.201200139
M3 - Article
AN - SCOPUS:84867958612
VL - 9
SP - 2050
EP - 2053
JO - Physica Status Solidi (C) Current Topics in Solid State Physics
JF - Physica Status Solidi (C) Current Topics in Solid State Physics
SN - 1862-6351
IS - 10-11
ER -