Prediction of the growth interface shape in industrial 300 mm CZ Si crystal growth

Research output: Contribution to journalConference articleResearchpeer review

Authors

  • Th Wetzel
  • J. Virbulis
  • A. Muiznieks
  • W. Von Ammon
  • E. Tomzig
  • G. Raming
  • M. Weber

External Research Organisations

  • Siltronic AG
  • University of Latvia
  • Center for Processes Analysis and Research
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Details

Original languageEnglish
Pages (from-to)34-39
Number of pages6
JournalJournal of crystal growth
Volume266
Issue number1-3
Early online date25 Mar 2004
Publication statusPublished - 15 May 2004
EventFourth International Workshop on Modeling - Kyushu, Japan
Duration: 4 Nov 20037 Nov 2003

Abstract

A model approach for a modification of the effective heat conductivity in the turbulent melt flow simulation for 28″ Si CZ crucibles is presented, which helped to overcome deficiencies in the growth interface shape prediction for industrial 300mm Si CZ growth. The model has been incorporated into a CZ simulation tool based on the simulation software codes FEMAG for the global heat transfer and CFD-ACE for the turbulent melt flow simulation. The model predictions are compared to results from 300mm Si CZ growth experiments with 200kg charge weight in 28″ crucibles in a growth parameter range covered by standard industrial processes. The model is an engineering approach. Nevertheless, some physical background is briefly discussed on a phenomenological basis, including results of recent model experiments.

Keywords

    A1. Fluid flows, A1. Heat transfer, A2. Czochralski method, A2. Single crystal growth, B2. Semiconducting silicon

ASJC Scopus subject areas

Cite this

Prediction of the growth interface shape in industrial 300 mm CZ Si crystal growth. / Wetzel, Th; Virbulis, J.; Muiznieks, A. et al.
In: Journal of crystal growth, Vol. 266, No. 1-3, 15.05.2004, p. 34-39.

Research output: Contribution to journalConference articleResearchpeer review

Wetzel, T, Virbulis, J, Muiznieks, A, Von Ammon, W, Tomzig, E, Raming, G & Weber, M 2004, 'Prediction of the growth interface shape in industrial 300 mm CZ Si crystal growth', Journal of crystal growth, vol. 266, no. 1-3, pp. 34-39. https://doi.org/10.1016/j.jcrysgro.2004.02.027
Wetzel, T., Virbulis, J., Muiznieks, A., Von Ammon, W., Tomzig, E., Raming, G., & Weber, M. (2004). Prediction of the growth interface shape in industrial 300 mm CZ Si crystal growth. Journal of crystal growth, 266(1-3), 34-39. https://doi.org/10.1016/j.jcrysgro.2004.02.027
Wetzel T, Virbulis J, Muiznieks A, Von Ammon W, Tomzig E, Raming G et al. Prediction of the growth interface shape in industrial 300 mm CZ Si crystal growth. Journal of crystal growth. 2004 May 15;266(1-3):34-39. Epub 2004 Mar 25. doi: 10.1016/j.jcrysgro.2004.02.027
Wetzel, Th ; Virbulis, J. ; Muiznieks, A. et al. / Prediction of the growth interface shape in industrial 300 mm CZ Si crystal growth. In: Journal of crystal growth. 2004 ; Vol. 266, No. 1-3. pp. 34-39.
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abstract = "A model approach for a modification of the effective heat conductivity in the turbulent melt flow simulation for 28″ Si CZ crucibles is presented, which helped to overcome deficiencies in the growth interface shape prediction for industrial 300mm Si CZ growth. The model has been incorporated into a CZ simulation tool based on the simulation software codes FEMAG for the global heat transfer and CFD-ACE for the turbulent melt flow simulation. The model predictions are compared to results from 300mm Si CZ growth experiments with 200kg charge weight in 28″ crucibles in a growth parameter range covered by standard industrial processes. The model is an engineering approach. Nevertheless, some physical background is briefly discussed on a phenomenological basis, including results of recent model experiments.",
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AU - Wetzel, Th

AU - Virbulis, J.

AU - Muiznieks, A.

AU - Von Ammon, W.

AU - Tomzig, E.

AU - Raming, G.

AU - Weber, M.

N1 - Funding Information: The authors would like to thank Prof. Dr. Yuri Gelfgat, Dr. Leonid Gorbunov and their team for the preparation of the model experiment data. This work was supported by the Federal Department of Education and Research of Germany under the contract No. 01M2973A. The authors alone are responsible for the content. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.

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N2 - A model approach for a modification of the effective heat conductivity in the turbulent melt flow simulation for 28″ Si CZ crucibles is presented, which helped to overcome deficiencies in the growth interface shape prediction for industrial 300mm Si CZ growth. The model has been incorporated into a CZ simulation tool based on the simulation software codes FEMAG for the global heat transfer and CFD-ACE for the turbulent melt flow simulation. The model predictions are compared to results from 300mm Si CZ growth experiments with 200kg charge weight in 28″ crucibles in a growth parameter range covered by standard industrial processes. The model is an engineering approach. Nevertheless, some physical background is briefly discussed on a phenomenological basis, including results of recent model experiments.

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KW - A2. Czochralski method

KW - A2. Single crystal growth

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