Details
Original language | English |
---|---|
Pages (from-to) | 34-39 |
Number of pages | 6 |
Journal | Journal of crystal growth |
Volume | 266 |
Issue number | 1-3 |
Early online date | 25 Mar 2004 |
Publication status | Published - 15 May 2004 |
Event | Fourth International Workshop on Modeling - Kyushu, Japan Duration: 4 Nov 2003 → 7 Nov 2003 |
Abstract
A model approach for a modification of the effective heat conductivity in the turbulent melt flow simulation for 28″ Si CZ crucibles is presented, which helped to overcome deficiencies in the growth interface shape prediction for industrial 300mm Si CZ growth. The model has been incorporated into a CZ simulation tool based on the simulation software codes FEMAG for the global heat transfer and CFD-ACE for the turbulent melt flow simulation. The model predictions are compared to results from 300mm Si CZ growth experiments with 200kg charge weight in 28″ crucibles in a growth parameter range covered by standard industrial processes. The model is an engineering approach. Nevertheless, some physical background is briefly discussed on a phenomenological basis, including results of recent model experiments.
Keywords
- A1. Fluid flows, A1. Heat transfer, A2. Czochralski method, A2. Single crystal growth, B2. Semiconducting silicon
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Condensed Matter Physics
- Chemistry(all)
- Inorganic Chemistry
- Materials Science(all)
- Materials Chemistry
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In: Journal of crystal growth, Vol. 266, No. 1-3, 15.05.2004, p. 34-39.
Research output: Contribution to journal › Conference article › Research › peer review
}
TY - JOUR
T1 - Prediction of the growth interface shape in industrial 300 mm CZ Si crystal growth
AU - Wetzel, Th
AU - Virbulis, J.
AU - Muiznieks, A.
AU - Von Ammon, W.
AU - Tomzig, E.
AU - Raming, G.
AU - Weber, M.
N1 - Funding Information: The authors would like to thank Prof. Dr. Yuri Gelfgat, Dr. Leonid Gorbunov and their team for the preparation of the model experiment data. This work was supported by the Federal Department of Education and Research of Germany under the contract No. 01M2973A. The authors alone are responsible for the content. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.
PY - 2004/5/15
Y1 - 2004/5/15
N2 - A model approach for a modification of the effective heat conductivity in the turbulent melt flow simulation for 28″ Si CZ crucibles is presented, which helped to overcome deficiencies in the growth interface shape prediction for industrial 300mm Si CZ growth. The model has been incorporated into a CZ simulation tool based on the simulation software codes FEMAG for the global heat transfer and CFD-ACE for the turbulent melt flow simulation. The model predictions are compared to results from 300mm Si CZ growth experiments with 200kg charge weight in 28″ crucibles in a growth parameter range covered by standard industrial processes. The model is an engineering approach. Nevertheless, some physical background is briefly discussed on a phenomenological basis, including results of recent model experiments.
AB - A model approach for a modification of the effective heat conductivity in the turbulent melt flow simulation for 28″ Si CZ crucibles is presented, which helped to overcome deficiencies in the growth interface shape prediction for industrial 300mm Si CZ growth. The model has been incorporated into a CZ simulation tool based on the simulation software codes FEMAG for the global heat transfer and CFD-ACE for the turbulent melt flow simulation. The model predictions are compared to results from 300mm Si CZ growth experiments with 200kg charge weight in 28″ crucibles in a growth parameter range covered by standard industrial processes. The model is an engineering approach. Nevertheless, some physical background is briefly discussed on a phenomenological basis, including results of recent model experiments.
KW - A1. Fluid flows
KW - A1. Heat transfer
KW - A2. Czochralski method
KW - A2. Single crystal growth
KW - B2. Semiconducting silicon
UR - http://www.scopus.com/inward/record.url?scp=2342472718&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2004.02.027
DO - 10.1016/j.jcrysgro.2004.02.027
M3 - Conference article
AN - SCOPUS:2342472718
VL - 266
SP - 34
EP - 39
JO - Journal of crystal growth
JF - Journal of crystal growth
SN - 0022-0248
IS - 1-3
T2 - Fourth International Workshop on Modeling
Y2 - 4 November 2003 through 7 November 2003
ER -