Details
| Original language | English |
|---|---|
| Title of host publication | PHYSICS OF SEMICONDUCTORS |
| Subtitle of host publication | 27th International Conference on the Physics of Semiconductors, ICPS-27 |
| Pages | 715-716 |
| Number of pages | 2 |
| Publication status | Published - 30 Jun 2005 |
| Event | PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, United States Duration: 26 Jul 2004 → 30 Jul 2004 |
Publication series
| Name | AIP Conference Proceedings |
|---|---|
| Volume | 772 |
| ISSN (Print) | 0094-243X |
| ISSN (electronic) | 1551-7616 |
Abstract
Optical transitions in self-assembled InAs/AlAs quantum dots were investigated by photoluminescence and photoluminescence excitation spectroscopy. In photoluminescence we found below about 1.8 eV emission from quantum dots whereas above ∼1.8 eV electrons from the AlAs X-band are involved. Photoluminescence excitation spectra show polaron states with a phonon energy of 31 meV of an individual InAs dot.
ASJC Scopus subject areas
- Physics and Astronomy(all)
- General Physics and Astronomy
Cite this
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PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27. 2005. p. 715-716 (AIP Conference Proceedings; Vol. 772).
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - Polaronic effects in optical transitions of single InAs/AlAs quantum dots
AU - Sarkar, D.
AU - Van Der Meulen, H. P.
AU - Calleja, J. M.
AU - Becker, J. M.
AU - Haug, R. J.
AU - Pierz, K.
PY - 2005/6/30
Y1 - 2005/6/30
N2 - Optical transitions in self-assembled InAs/AlAs quantum dots were investigated by photoluminescence and photoluminescence excitation spectroscopy. In photoluminescence we found below about 1.8 eV emission from quantum dots whereas above ∼1.8 eV electrons from the AlAs X-band are involved. Photoluminescence excitation spectra show polaron states with a phonon energy of 31 meV of an individual InAs dot.
AB - Optical transitions in self-assembled InAs/AlAs quantum dots were investigated by photoluminescence and photoluminescence excitation spectroscopy. In photoluminescence we found below about 1.8 eV emission from quantum dots whereas above ∼1.8 eV electrons from the AlAs X-band are involved. Photoluminescence excitation spectra show polaron states with a phonon energy of 31 meV of an individual InAs dot.
UR - http://www.scopus.com/inward/record.url?scp=33749504192&partnerID=8YFLogxK
U2 - 10.1063/1.1994306
DO - 10.1063/1.1994306
M3 - Conference contribution
AN - SCOPUS:33749504192
SN - 0735402574
SN - 9780735402577
T3 - AIP Conference Proceedings
SP - 715
EP - 716
BT - PHYSICS OF SEMICONDUCTORS
T2 - PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
Y2 - 26 July 2004 through 30 July 2004
ER -