Details
| Original language | English |
|---|---|
| Article number | 045202 |
| Journal | Physical Review B |
| Volume | 107 |
| Issue number | 4 |
| Publication status | Published - 5 Jan 2023 |
| Externally published | Yes |
Abstract
Semipolar (112¯2) AlInN/GaN heterostructures on GaN templates were studied using photoluminescence (PL) spectroscopy both at 15 K and at room temperature. The polarization-resolved PL measurements revealed a dominant polarization along the [112¯3¯] c′ and a weaker signal along the [11¯00] m-direction, i.e., the two in-plane directions of the semipolar (112¯2) growth plane. We observed slightly different polarization degrees of 0.34±0.01, 0.25±0.02, and 0.20±0.01 at room temperature, respectively, depending on the degree of strain relaxation in the [11¯00] direction. From a theoretical model based on a k·p calculation, we find that the transition from the conduction band (CB) to the uppermost valence band (VB) is C for AlInN similar to AlN, followed by the transition A from the CB to the second VB, for a wide range of compositions. Thus, the in-plane transition matrix elements from the CB to the two topmost VBs near the Γ point of the Brillouin zone are dominated by M[112¯3¯] for the C transition and by M[11¯00] for the A transition. For the samples under consideration with an energy splitting of about 18±1meV, there is sizable thermal occupation of the second VB at room temperature, reasonably explaining the experimental results. The results show that AlInN possesses a band structure similar to AlN, which might explain the strong Stokes shift and the large variation in the band-gap values reported previously.
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Condensed Matter Physics
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In: Physical Review B, Vol. 107, No. 4, 045202, 05.01.2023.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Polarization anisotropy and valence band ordering in semipolar (112¯2) AlInN/GaN heterostructures
AU - Sidikejiang, Shawutijiang
AU - Henning, Philipp
AU - Rossow, Uwe
AU - Bremers, Heiko
AU - Scholz, Ferdinand
AU - Hangleiter, Andreas
N1 - Publisher Copyright: © 2023 American Physical Society.
PY - 2023/1/5
Y1 - 2023/1/5
N2 - Semipolar (112¯2) AlInN/GaN heterostructures on GaN templates were studied using photoluminescence (PL) spectroscopy both at 15 K and at room temperature. The polarization-resolved PL measurements revealed a dominant polarization along the [112¯3¯] c′ and a weaker signal along the [11¯00] m-direction, i.e., the two in-plane directions of the semipolar (112¯2) growth plane. We observed slightly different polarization degrees of 0.34±0.01, 0.25±0.02, and 0.20±0.01 at room temperature, respectively, depending on the degree of strain relaxation in the [11¯00] direction. From a theoretical model based on a k·p calculation, we find that the transition from the conduction band (CB) to the uppermost valence band (VB) is C for AlInN similar to AlN, followed by the transition A from the CB to the second VB, for a wide range of compositions. Thus, the in-plane transition matrix elements from the CB to the two topmost VBs near the Γ point of the Brillouin zone are dominated by M[112¯3¯] for the C transition and by M[11¯00] for the A transition. For the samples under consideration with an energy splitting of about 18±1meV, there is sizable thermal occupation of the second VB at room temperature, reasonably explaining the experimental results. The results show that AlInN possesses a band structure similar to AlN, which might explain the strong Stokes shift and the large variation in the band-gap values reported previously.
AB - Semipolar (112¯2) AlInN/GaN heterostructures on GaN templates were studied using photoluminescence (PL) spectroscopy both at 15 K and at room temperature. The polarization-resolved PL measurements revealed a dominant polarization along the [112¯3¯] c′ and a weaker signal along the [11¯00] m-direction, i.e., the two in-plane directions of the semipolar (112¯2) growth plane. We observed slightly different polarization degrees of 0.34±0.01, 0.25±0.02, and 0.20±0.01 at room temperature, respectively, depending on the degree of strain relaxation in the [11¯00] direction. From a theoretical model based on a k·p calculation, we find that the transition from the conduction band (CB) to the uppermost valence band (VB) is C for AlInN similar to AlN, followed by the transition A from the CB to the second VB, for a wide range of compositions. Thus, the in-plane transition matrix elements from the CB to the two topmost VBs near the Γ point of the Brillouin zone are dominated by M[112¯3¯] for the C transition and by M[11¯00] for the A transition. For the samples under consideration with an energy splitting of about 18±1meV, there is sizable thermal occupation of the second VB at room temperature, reasonably explaining the experimental results. The results show that AlInN possesses a band structure similar to AlN, which might explain the strong Stokes shift and the large variation in the band-gap values reported previously.
UR - http://www.scopus.com/inward/record.url?scp=85146363382&partnerID=8YFLogxK
U2 - 10.1103/physrevb.107.045202
DO - 10.1103/physrevb.107.045202
M3 - Article
VL - 107
JO - Physical Review B
JF - Physical Review B
SN - 2469-9950
IS - 4
M1 - 045202
ER -