Details
| Original language | English |
|---|---|
| Pages (from-to) | 113-118 |
| Number of pages | 6 |
| Journal | Solar Energy Materials and Solar Cells |
| Volume | 105 |
| Early online date | 23 Jun 2012 |
| Publication status | Published - Oct 2012 |
Abstract
In this paper we demonstrate the preparation of point contact openings in surface passivated macroporous silicon layers. In our experiments we control the etching parameters to vary the percentage of these non-passivated local openings from 0% to 1.6%. We investigate the impact of these local openings in the passivating layer on the effective carrier lifetime. These local openings reduce the measured effective carrier lifetime with increasing percentage of the non-passivated areas. We measure effective carrier lifetimes up to 10 μs on 29 μm-thick fully passivated macroporous silicon samples. We develop and apply a 3-dimensional numerical model to calculate carrier lifetimes as a function of pore morphology, surface recombination, percentage of non-passivated area, and bulk lifetime. The model agrees with the experimental measurements. We find a surface recombination velocity of (S pass=22.8 -1.4 1.6) cm s -1 for the passivated surfaces and S np=(2200 -1400 1500) cm s -1 for the non-passivated surface.
Keywords
- Carrier lifetime, Carrier transport, Macroporous Si, Modeling, Numerical modeling, Porous Si
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Energy(all)
- Renewable Energy, Sustainability and the Environment
- Materials Science(all)
- Surfaces, Coatings and Films
Sustainable Development Goals
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In: Solar Energy Materials and Solar Cells, Vol. 105, 10.2012, p. 113-118.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Point contact openings in surface passivated macroporous silicon layers
AU - Ernst, Marco
AU - Zywietz, Urs
AU - Brendel, Rolf
PY - 2012/10
Y1 - 2012/10
N2 - In this paper we demonstrate the preparation of point contact openings in surface passivated macroporous silicon layers. In our experiments we control the etching parameters to vary the percentage of these non-passivated local openings from 0% to 1.6%. We investigate the impact of these local openings in the passivating layer on the effective carrier lifetime. These local openings reduce the measured effective carrier lifetime with increasing percentage of the non-passivated areas. We measure effective carrier lifetimes up to 10 μs on 29 μm-thick fully passivated macroporous silicon samples. We develop and apply a 3-dimensional numerical model to calculate carrier lifetimes as a function of pore morphology, surface recombination, percentage of non-passivated area, and bulk lifetime. The model agrees with the experimental measurements. We find a surface recombination velocity of (S pass=22.8 -1.4 1.6) cm s -1 for the passivated surfaces and S np=(2200 -1400 1500) cm s -1 for the non-passivated surface.
AB - In this paper we demonstrate the preparation of point contact openings in surface passivated macroporous silicon layers. In our experiments we control the etching parameters to vary the percentage of these non-passivated local openings from 0% to 1.6%. We investigate the impact of these local openings in the passivating layer on the effective carrier lifetime. These local openings reduce the measured effective carrier lifetime with increasing percentage of the non-passivated areas. We measure effective carrier lifetimes up to 10 μs on 29 μm-thick fully passivated macroporous silicon samples. We develop and apply a 3-dimensional numerical model to calculate carrier lifetimes as a function of pore morphology, surface recombination, percentage of non-passivated area, and bulk lifetime. The model agrees with the experimental measurements. We find a surface recombination velocity of (S pass=22.8 -1.4 1.6) cm s -1 for the passivated surfaces and S np=(2200 -1400 1500) cm s -1 for the non-passivated surface.
KW - Carrier lifetime
KW - Carrier transport
KW - Macroporous Si
KW - Modeling
KW - Numerical modeling
KW - Porous Si
UR - http://www.scopus.com/inward/record.url?scp=84862593802&partnerID=8YFLogxK
U2 - 10.1016/j.solmat.2012.05.033
DO - 10.1016/j.solmat.2012.05.033
M3 - Article
AN - SCOPUS:84862593802
VL - 105
SP - 113
EP - 118
JO - Solar Energy Materials and Solar Cells
JF - Solar Energy Materials and Solar Cells
SN - 0927-0248
ER -