P+/n+ polysilicon-on-oxide tunneling junctions as an interface of p-type PERC cells for tandem applications

Research output: Chapter in book/report/conference proceedingConference contributionResearchpeer review

Authors

  • Robby Peibst
  • Michael Rienäcker
  • Byungsul Min
  • Christina Klamt
  • Raphael Niepelt
  • Tobias Wietler
  • Thorsten Dullweber
  • Eduard Sauter
  • Jens Hübner
  • Michael Oestreich
  • Rolf Brendel

External Research Organisations

  • Institute for Solar Energy Research (ISFH)
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Details

Original languageEnglish
Title of host publication2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2635-2637
Number of pages3
ISBN (electronic)9781538685297
Publication statusPublished - 26 Nov 2018
Event7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - Waikoloa Village, United States
Duration: 10 Jun 201815 Jun 2018

Abstract

We present a novel cell concept that combines the tandem cell approach with the PERC mainstream technology. As an interface between Si bottom and top cell, we utilize passivating \text{n} {mathbf {+}}-type polysilicon on oxide (POLO) contacts and a p+ poly-Si / n+ poly-Si tunneling junction. Our full area PERC+ Si bottom cells are fabricated within a typical industrial process {mathbf {sequence\, where\, the\, POCl}}3{mathbf {-diffusion\, and\, SiN}} \mathbf {x}deposition are replaced by the POLO junction formation processes. The implied {mathbf {open\, circuit\, voltage\, iV}} \mathbf {oc} measured on these devices reaches up to 708 mV (684 mV) under 1 sun (under filtered spectrum), respectively.

Keywords

    P-type silicon cell, passivated Emitter and Rear Cells (PERC), passivating contacts, photovoltaic cells, polycrystalline silicon, silicon-based tandem solar cells, solar energy

ASJC Scopus subject areas

Sustainable Development Goals

Cite this

P+/n+ polysilicon-on-oxide tunneling junctions as an interface of p-type PERC cells for tandem applications. / Peibst, Robby; Rienäcker, Michael; Min, Byungsul et al.
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC. Institute of Electrical and Electronics Engineers Inc., 2018. p. 2635-2637 8548032.

Research output: Chapter in book/report/conference proceedingConference contributionResearchpeer review

Peibst, R, Rienäcker, M, Min, B, Klamt, C, Niepelt, R, Wietler, T, Dullweber, T, Sauter, E, Hübner, J, Oestreich, M & Brendel, R 2018, P+/n+ polysilicon-on-oxide tunneling junctions as an interface of p-type PERC cells for tandem applications. in 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC., 8548032, Institute of Electrical and Electronics Engineers Inc., pp. 2635-2637, 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018, Waikoloa Village, United States, 10 Jun 2018. https://doi.org/10.1109/pvsc.2018.8548032
Peibst, R., Rienäcker, M., Min, B., Klamt, C., Niepelt, R., Wietler, T., Dullweber, T., Sauter, E., Hübner, J., Oestreich, M., & Brendel, R. (2018). P+/n+ polysilicon-on-oxide tunneling junctions as an interface of p-type PERC cells for tandem applications. In 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC (pp. 2635-2637). Article 8548032 Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/pvsc.2018.8548032
Peibst R, Rienäcker M, Min B, Klamt C, Niepelt R, Wietler T et al. P+/n+ polysilicon-on-oxide tunneling junctions as an interface of p-type PERC cells for tandem applications. In 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC. Institute of Electrical and Electronics Engineers Inc. 2018. p. 2635-2637. 8548032 doi: 10.1109/pvsc.2018.8548032
Peibst, Robby ; Rienäcker, Michael ; Min, Byungsul et al. / P+/n+ polysilicon-on-oxide tunneling junctions as an interface of p-type PERC cells for tandem applications. 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 2635-2637
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abstract = "We present a novel cell concept that combines the tandem cell approach with the PERC mainstream technology. As an interface between Si bottom and top cell, we utilize passivating \text{n} {mathbf {+}}-type polysilicon on oxide (POLO) contacts and a p+ poly-Si / n+ poly-Si tunneling junction. Our full area PERC+ Si bottom cells are fabricated within a typical industrial process {mathbf {sequence\, where\, the\, POCl}}3{mathbf {-diffusion\, and\, SiN}} \mathbf {x}deposition are replaced by the POLO junction formation processes. The implied {mathbf {open\, circuit\, voltage\, iV}} \mathbf {oc} measured on these devices reaches up to 708 mV (684 mV) under 1 sun (under filtered spectrum), respectively.",
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AU - Peibst, Robby

AU - Rienäcker, Michael

AU - Min, Byungsul

AU - Klamt, Christina

AU - Niepelt, Raphael

AU - Wietler, Tobias

AU - Dullweber, Thorsten

AU - Sauter, Eduard

AU - Hübner, Jens

AU - Oestreich, Michael

AU - Brendel, Rolf

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KW - passivated Emitter and Rear Cells (PERC)

KW - passivating contacts

KW - photovoltaic cells

KW - polycrystalline silicon

KW - silicon-based tandem solar cells

KW - solar energy

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DO - 10.1109/pvsc.2018.8548032

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BT - 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC

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