Plasmon damping below the Landau regime: The role of defects in epitaxial graphene

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Authors

  • Thomas Langer
  • J. Baringhaus
  • Herbert Pfnür
  • H. W. Schumacher
  • Christoph Tegenkamp

Research Organisations

External Research Organisations

  • Physikalisch-Technische Bundesanstalt PTB
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Original languageEnglish
Article number033017
JournalNew Journal of Physics
Volume12
Publication statusPublished - 11 Mar 2010

Abstract

The sheet plasmon in epitaxially grown graphene layers on SiC(0001) and the influence of surface roughness have been investigated in detail by means of low-energy electron diffraction (LEED) and electron energy loss spectroscopy (EELS). We show that the existence of steps or grain boundaries in this epitaxial system is a source of strong damping, while the dispersion is rather insensitive to defects. To the first order, the lifetime of the plasmons was found to be proportional to the average terrace length and to the plasmon wavelength. A possible reason for this surprisingly efficient plasmon damping may be the close coincidence of phase (and group) velocities of the plasmons (almost linear dispersion) with the Fermi velocity of the electrons. Therefore, uncorrelated defects like steps only have to act as a momentum source to effectively couple plasmons to the electron-hole continuum.

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Plasmon damping below the Landau regime: The role of defects in epitaxial graphene. / Langer, Thomas; Baringhaus, J.; Pfnür, Herbert et al.
In: New Journal of Physics, Vol. 12, 033017, 11.03.2010.

Research output: Contribution to journalArticleResearchpeer review

Langer T, Baringhaus J, Pfnür H, Schumacher HW, Tegenkamp C. Plasmon damping below the Landau regime: The role of defects in epitaxial graphene. New Journal of Physics. 2010 Mar 11;12:033017. doi: 10.1088/1367-2630/12/3/033017
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