Details
| Original language | English |
|---|---|
| Article number | 035006 |
| Journal | Semiconductor Science and Technology |
| Volume | 35 |
| Issue number | 3 |
| Publication status | Published - 2020 |
| Externally published | Yes |
Abstract
Plasma profiling time of flight mass spectrometry (PP-TOFMS) has recently gained interest as it enables the elemental profiling of semiconductor structures with high depth resolution in short acquisition times. As recently shown by Tempez et al PP-TOFMS can be used to obtain the composition within structures of modern field effect transistors [1]. There, the results were compared to conventional SIMS measurements. In the present study, we compare PP-TOFMS measurements of an Al-/In-/GaN quantum well multi stack to established micro- and nanoanalysis techniques like cathodoluminescence (CL), scanning transmission electron microscopy (STEM), energy dispersive x-ray spectroscopy (EDX) and x-ray diffraction (XRD). We show that PP-TOFMS is able to resolve the layer structure of the sample even more than 500 nm deep into the sample and allows the determination of a relative elemental composition with an accuracy of about 10 rel%. Therefore, it is an extremely rapid alternative method to obtain semiconductor elemental depth profiles without the expensive and time consuming sample preparation required for TEM. Besides, PP-TOFMS offers better depth resolution and more elemental information than, for example, electrochemical capacitance-voltage (ECV) evaluations, since all elements are detected in parallel and not only electrically (ECV) or optically (CL) active elements are observed.
Keywords
- AlGaN, GaN, InGaN, MQW, PP-TOFMS, TEM, XRD
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Electrical and Electronic Engineering
- Materials Science(all)
- Materials Chemistry
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In: Semiconductor Science and Technology, Vol. 35, No. 3, 035006, 2020.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Plasma profiling time-of-flight mass spectrometry for fast elemental analysis of semiconductor structures with depth resolution in the nanometer range
AU - Spende, Hendrik
AU - Margenfeld, Christoph
AU - Meyer, Tobias
AU - Clavero, Irene Manglano
AU - Bremers, Heiko
AU - Hangleiter, Andreas
AU - Seibt, Michael
AU - Waag, Andreas
AU - Bakin, Andrey
N1 - Publisher Copyright: © 2020 The Author(s). Published by IOP Publishing Ltd.
PY - 2020
Y1 - 2020
N2 - Plasma profiling time of flight mass spectrometry (PP-TOFMS) has recently gained interest as it enables the elemental profiling of semiconductor structures with high depth resolution in short acquisition times. As recently shown by Tempez et al PP-TOFMS can be used to obtain the composition within structures of modern field effect transistors [1]. There, the results were compared to conventional SIMS measurements. In the present study, we compare PP-TOFMS measurements of an Al-/In-/GaN quantum well multi stack to established micro- and nanoanalysis techniques like cathodoluminescence (CL), scanning transmission electron microscopy (STEM), energy dispersive x-ray spectroscopy (EDX) and x-ray diffraction (XRD). We show that PP-TOFMS is able to resolve the layer structure of the sample even more than 500 nm deep into the sample and allows the determination of a relative elemental composition with an accuracy of about 10 rel%. Therefore, it is an extremely rapid alternative method to obtain semiconductor elemental depth profiles without the expensive and time consuming sample preparation required for TEM. Besides, PP-TOFMS offers better depth resolution and more elemental information than, for example, electrochemical capacitance-voltage (ECV) evaluations, since all elements are detected in parallel and not only electrically (ECV) or optically (CL) active elements are observed.
AB - Plasma profiling time of flight mass spectrometry (PP-TOFMS) has recently gained interest as it enables the elemental profiling of semiconductor structures with high depth resolution in short acquisition times. As recently shown by Tempez et al PP-TOFMS can be used to obtain the composition within structures of modern field effect transistors [1]. There, the results were compared to conventional SIMS measurements. In the present study, we compare PP-TOFMS measurements of an Al-/In-/GaN quantum well multi stack to established micro- and nanoanalysis techniques like cathodoluminescence (CL), scanning transmission electron microscopy (STEM), energy dispersive x-ray spectroscopy (EDX) and x-ray diffraction (XRD). We show that PP-TOFMS is able to resolve the layer structure of the sample even more than 500 nm deep into the sample and allows the determination of a relative elemental composition with an accuracy of about 10 rel%. Therefore, it is an extremely rapid alternative method to obtain semiconductor elemental depth profiles without the expensive and time consuming sample preparation required for TEM. Besides, PP-TOFMS offers better depth resolution and more elemental information than, for example, electrochemical capacitance-voltage (ECV) evaluations, since all elements are detected in parallel and not only electrically (ECV) or optically (CL) active elements are observed.
KW - AlGaN
KW - GaN
KW - InGaN
KW - MQW
KW - PP-TOFMS
KW - TEM
KW - XRD
UR - http://www.scopus.com/inward/record.url?scp=85082242292&partnerID=8YFLogxK
U2 - 10.1088/1361-6641/ab6ac0
DO - 10.1088/1361-6641/ab6ac0
M3 - Article
AN - SCOPUS:85082242292
VL - 35
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
SN - 0268-1242
IS - 3
M1 - 035006
ER -