Details
| Original language | English |
|---|---|
| Article number | 253902 |
| Journal | Applied physics letters |
| Volume | 110 |
| Issue number | 25 |
| Publication status | Published - 19 Jun 2017 |
Abstract
In the pursuit of ever higher conversion efficiencies for silicon photovoltaic cells, polycrystalline silicon (poly-Si) layers on thin silicon oxide films were shown to form excellent carrier-selective junctions on crystalline silicon substrates. Investigating the pinhole formation that is induced in the thermal processing of the poly-Si on oxide (POLO) junctions is essential for optimizing their electronic performance. We observe the pinholes in the oxide layer by selective etching of the underlying crystalline silicon. The originally nm-sized pinholes are thus readily detected using simple optical and scanning electron microscopy. The resulting pinhole densities are in the range of 6.6 × 106 cm-2 to 1.6 × 108 cm-2 for POLO junctions with selectivities close to S10 = 16, i.e., saturation current density J0c below 10 fA/cm2 and contact resistivity ρc below 10 mΩcm2. The measured pinhole densities agree with values deduced by a pinhole-mediated current transport model. Thus, we conclude pinhole-mediated current transport to be the dominating transport mechanism in the POLO junctions investigated here.
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Physics and Astronomy (miscellaneous)
Sustainable Development Goals
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In: Applied physics letters, Vol. 110, No. 25, 253902, 19.06.2017.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Pinhole density and contact resistivity of carrier selective junctions with polycrystalline silicon on oxide
AU - Wietler, T. F.
AU - Tetzlaff, D.
AU - Krügener, J.
AU - Rienäcker, M.
AU - Haase, F.
AU - Larionova, Y.
AU - Brendel, R.
AU - Peibst, R.
PY - 2017/6/19
Y1 - 2017/6/19
N2 - In the pursuit of ever higher conversion efficiencies for silicon photovoltaic cells, polycrystalline silicon (poly-Si) layers on thin silicon oxide films were shown to form excellent carrier-selective junctions on crystalline silicon substrates. Investigating the pinhole formation that is induced in the thermal processing of the poly-Si on oxide (POLO) junctions is essential for optimizing their electronic performance. We observe the pinholes in the oxide layer by selective etching of the underlying crystalline silicon. The originally nm-sized pinholes are thus readily detected using simple optical and scanning electron microscopy. The resulting pinhole densities are in the range of 6.6 × 106 cm-2 to 1.6 × 108 cm-2 for POLO junctions with selectivities close to S10 = 16, i.e., saturation current density J0c below 10 fA/cm2 and contact resistivity ρc below 10 mΩcm2. The measured pinhole densities agree with values deduced by a pinhole-mediated current transport model. Thus, we conclude pinhole-mediated current transport to be the dominating transport mechanism in the POLO junctions investigated here.
AB - In the pursuit of ever higher conversion efficiencies for silicon photovoltaic cells, polycrystalline silicon (poly-Si) layers on thin silicon oxide films were shown to form excellent carrier-selective junctions on crystalline silicon substrates. Investigating the pinhole formation that is induced in the thermal processing of the poly-Si on oxide (POLO) junctions is essential for optimizing their electronic performance. We observe the pinholes in the oxide layer by selective etching of the underlying crystalline silicon. The originally nm-sized pinholes are thus readily detected using simple optical and scanning electron microscopy. The resulting pinhole densities are in the range of 6.6 × 106 cm-2 to 1.6 × 108 cm-2 for POLO junctions with selectivities close to S10 = 16, i.e., saturation current density J0c below 10 fA/cm2 and contact resistivity ρc below 10 mΩcm2. The measured pinhole densities agree with values deduced by a pinhole-mediated current transport model. Thus, we conclude pinhole-mediated current transport to be the dominating transport mechanism in the POLO junctions investigated here.
UR - http://www.scopus.com/inward/record.url?scp=85021077362&partnerID=8YFLogxK
U2 - 10.1063/1.4986924
DO - 10.1063/1.4986924
M3 - Article
AN - SCOPUS:85021077362
VL - 110
JO - Applied physics letters
JF - Applied physics letters
SN - 0003-6951
IS - 25
M1 - 253902
ER -