Details
Original language | English |
---|---|
Article number | 241305 |
Journal | Physical Review B - Condensed Matter and Materials Physics |
Volume | 78 |
Issue number | 24 |
Publication status | Published - 1 Dec 2008 |
Abstract
Microphotoluminescence spectroscopy at variable temperature, excitation intensity, and energy was performed on a single InAs/AlAs self-assembled quantum dot. The exciton emission line [zero-phonon line (ZPL)] exhibits a broad sideband due to exciton acoustic-phonon coupling by the deformation-potential mechanism. Additionally, narrow low-energy sidebands at about 0.25 meV of the ZPL are attributed to exciton acoustic-phonon piezoelectric coupling. In lowering the excitation energy or intensity these bands gradually dominate the emission spectrum of the quantum dot while the ZPL disappears. At high excitation intensity the sidebands due to piezoelectric coupling decrease strongly and the ZPL dominates the spectrum as a consequence of screening of the piezoelectric coupling by the photocreated free carriers.
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Condensed Matter Physics
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In: Physical Review B - Condensed Matter and Materials Physics, Vol. 78, No. 24, 241305, 01.12.2008.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Piezoelectric exciton acoustic-phonon coupling in single quantum dots
AU - Sarkar, D.
AU - Van Der Meulen, H. P.
AU - Calleja, J. M.
AU - Meyer, J. M.
AU - Haug, R. J.
AU - Pierz, K.
PY - 2008/12/1
Y1 - 2008/12/1
N2 - Microphotoluminescence spectroscopy at variable temperature, excitation intensity, and energy was performed on a single InAs/AlAs self-assembled quantum dot. The exciton emission line [zero-phonon line (ZPL)] exhibits a broad sideband due to exciton acoustic-phonon coupling by the deformation-potential mechanism. Additionally, narrow low-energy sidebands at about 0.25 meV of the ZPL are attributed to exciton acoustic-phonon piezoelectric coupling. In lowering the excitation energy or intensity these bands gradually dominate the emission spectrum of the quantum dot while the ZPL disappears. At high excitation intensity the sidebands due to piezoelectric coupling decrease strongly and the ZPL dominates the spectrum as a consequence of screening of the piezoelectric coupling by the photocreated free carriers.
AB - Microphotoluminescence spectroscopy at variable temperature, excitation intensity, and energy was performed on a single InAs/AlAs self-assembled quantum dot. The exciton emission line [zero-phonon line (ZPL)] exhibits a broad sideband due to exciton acoustic-phonon coupling by the deformation-potential mechanism. Additionally, narrow low-energy sidebands at about 0.25 meV of the ZPL are attributed to exciton acoustic-phonon piezoelectric coupling. In lowering the excitation energy or intensity these bands gradually dominate the emission spectrum of the quantum dot while the ZPL disappears. At high excitation intensity the sidebands due to piezoelectric coupling decrease strongly and the ZPL dominates the spectrum as a consequence of screening of the piezoelectric coupling by the photocreated free carriers.
UR - http://www.scopus.com/inward/record.url?scp=58549097927&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.78.241305
DO - 10.1103/PhysRevB.78.241305
M3 - Article
AN - SCOPUS:58549097927
VL - 78
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
SN - 1098-0121
IS - 24
M1 - 241305
ER -