Details
| Original language | English |
|---|---|
| Pages (from-to) | 123-126 |
| Number of pages | 4 |
| Journal | Journal of Luminescence |
| Volume | 58 |
| Issue number | 1-6 |
| Publication status | Published - Jan 1994 |
| Externally published | Yes |
Abstract
We investigate the dependence of carrier lifetime in compressed semi-insulating GaAs on defect concentration, excitation intensity, and temperature by means of time-resolved photoluminescence spectroscopy. The carrier lifetime decreases from 240 ps over 50 ps down to 10 ps as the arsenic antisite defect concentration increases from 0.41016 cm-3 over 2.01016 cm-3 to 10.01016 cm-3.
ASJC Scopus subject areas
- Biochemistry, Genetics and Molecular Biology(all)
- Biophysics
- Biochemistry, Genetics and Molecular Biology(all)
- Biochemistry
- Chemistry(all)
- Physics and Astronomy(all)
- Atomic and Molecular Physics, and Optics
- Physics and Astronomy(all)
- Condensed Matter Physics
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In: Journal of Luminescence, Vol. 58, No. 1-6, 01.1994, p. 123-126.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Picosecond spectroscopy of plastically deformed GaAs
AU - Oestreich, Michael
AU - Rühle, Wolfgang W.
AU - Krüger, J.
AU - Alexander, H.
N1 - Funding information: We wish to thank K. Rother and H. Klann for expert technical assistance. The partial financial support of the Bundesministerium für Forschung und Technologie is gratefully acknowledged.
PY - 1994/1
Y1 - 1994/1
N2 - We investigate the dependence of carrier lifetime in compressed semi-insulating GaAs on defect concentration, excitation intensity, and temperature by means of time-resolved photoluminescence spectroscopy. The carrier lifetime decreases from 240 ps over 50 ps down to 10 ps as the arsenic antisite defect concentration increases from 0.41016 cm-3 over 2.01016 cm-3 to 10.01016 cm-3.
AB - We investigate the dependence of carrier lifetime in compressed semi-insulating GaAs on defect concentration, excitation intensity, and temperature by means of time-resolved photoluminescence spectroscopy. The carrier lifetime decreases from 240 ps over 50 ps down to 10 ps as the arsenic antisite defect concentration increases from 0.41016 cm-3 over 2.01016 cm-3 to 10.01016 cm-3.
UR - http://www.scopus.com/inward/record.url?scp=0028253194&partnerID=8YFLogxK
U2 - 10.1016/0022-2313(94)90376-X
DO - 10.1016/0022-2313(94)90376-X
M3 - Article
AN - SCOPUS:0028253194
VL - 58
SP - 123
EP - 126
JO - Journal of Luminescence
JF - Journal of Luminescence
SN - 0022-2313
IS - 1-6
ER -