Photoluminescence of self-assembled InAs/AlAs quantum dots as a function of density

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Original languageEnglish
Pages (from-to)117-119
Number of pages3
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume17
Issue number1-4
Publication statusPublished - 25 Feb 2003
EventInternational Conference on Superlattices - ICSNN 2002 - Touluse, France
Duration: 22 Jul 200226 Jul 2002

Abstract

We report photoluminescence data from three InAs/AlAs quantum dot samples with different densities and separations, respectively. For medium density the quantum dot related emission peak shows a blueshift with increasing excitation power whereas for very high dot density a redshift is observed. These opposite peak shifts are explained by different carrier transfer processes amongst lateral coupled QDs.

Keywords

    InAs/AlAs, Photoluminescence, Quantum dots, Self-assembled quantum dots

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Cite this

Photoluminescence of self-assembled InAs/AlAs quantum dots as a function of density. / Ma, Z.; Pierz, K.; Keyser, U. F. et al.
In: Physica E: Low-Dimensional Systems and Nanostructures, Vol. 17, No. 1-4, 25.02.2003, p. 117-119.

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abstract = "We report photoluminescence data from three InAs/AlAs quantum dot samples with different densities and separations, respectively. For medium density the quantum dot related emission peak shows a blueshift with increasing excitation power whereas for very high dot density a redshift is observed. These opposite peak shifts are explained by different carrier transfer processes amongst lateral coupled QDs.",
keywords = "InAs/AlAs, Photoluminescence, Quantum dots, Self-assembled quantum dots",
author = "Z. Ma and K. Pierz and Keyser, {U. F.} and Haug, {R. J.}",
note = "Funding information: This work was supported by the Deutsche Forschungsgemeinschaft (DFG), Grant Nos. Pi385/1-2 and Ha1826/5-2.; International Conference on Superlattices - ICSNN 2002 ; Conference date: 22-07-2002 Through 26-07-2002",
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TY - JOUR

T1 - Photoluminescence of self-assembled InAs/AlAs quantum dots as a function of density

AU - Ma, Z.

AU - Pierz, K.

AU - Keyser, U. F.

AU - Haug, R. J.

N1 - Funding information: This work was supported by the Deutsche Forschungsgemeinschaft (DFG), Grant Nos. Pi385/1-2 and Ha1826/5-2.

PY - 2003/2/25

Y1 - 2003/2/25

N2 - We report photoluminescence data from three InAs/AlAs quantum dot samples with different densities and separations, respectively. For medium density the quantum dot related emission peak shows a blueshift with increasing excitation power whereas for very high dot density a redshift is observed. These opposite peak shifts are explained by different carrier transfer processes amongst lateral coupled QDs.

AB - We report photoluminescence data from three InAs/AlAs quantum dot samples with different densities and separations, respectively. For medium density the quantum dot related emission peak shows a blueshift with increasing excitation power whereas for very high dot density a redshift is observed. These opposite peak shifts are explained by different carrier transfer processes amongst lateral coupled QDs.

KW - InAs/AlAs

KW - Photoluminescence

KW - Quantum dots

KW - Self-assembled quantum dots

UR - http://www.scopus.com/inward/record.url?scp=0037391580&partnerID=8YFLogxK

U2 - 10.1016/S1386-9477(02)00737-3

DO - 10.1016/S1386-9477(02)00737-3

M3 - Conference article

AN - SCOPUS:0037391580

VL - 17

SP - 117

EP - 119

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

SN - 1386-9477

IS - 1-4

T2 - International Conference on Superlattices - ICSNN 2002

Y2 - 22 July 2002 through 26 July 2002

ER -

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