TY - JOUR

T1 - Photocurrent measurements for laterally resolved interface characterization

AU - Moritz, W.

AU - Gerhardt, I.

AU - Roden, D.

AU - Xu, M.

AU - Krause, S.

N1 - Funding information: Acknowledgments The GaAs samples with epilayer and anodic oxide were kindly prepared by EPIGAP GmbH, Berlin. The authors wish to thank the Microelectronics Centre at Southampton University for providing oxidized silicon substrates, the Engineering Department at Sheffield University for their support in the fabrication of test structures and UNISCAN and the EPSRC for funding the project.

PY - 2000

Y1 - 2000

N2 - A miniaturized optical set-up based on a CD-ROM player optic was developed for LAPS (light ad-dressable potentiometric sensors). A focus of 2.6~m$m was achieved using this easy to handle device. The lateral res-olution of LAPS measurements can be improved by using GaAs as the semiconductor material instead of Si. The diffusion length of the minority charge carriers was deter-mined to be smaller than 3.1$m. A new method called SPIM (scanning photo-induced impedance microscopy) is described. Using this technique, the impedance of thin films can be measured with lateral resolution.

AB - A miniaturized optical set-up based on a CD-ROM player optic was developed for LAPS (light ad-dressable potentiometric sensors). A focus of 2.6~m$m was achieved using this easy to handle device. The lateral res-olution of LAPS measurements can be improved by using GaAs as the semiconductor material instead of Si. The diffusion length of the minority charge carriers was deter-mined to be smaller than 3.1$m. A new method called SPIM (scanning photo-induced impedance microscopy) is described. Using this technique, the impedance of thin films can be measured with lateral resolution.

KW - Potentiometric Sensing

KW - Interface Potentials

KW - Optical Resolution in Semiconductors

M3 - Article

VL - 367

SP - 329

EP - 333

JO - Fresenius J. Anal. Chem.

JF - Fresenius J. Anal. Chem.

ER -