Details
| Original language | English |
|---|---|
| Title of host publication | Physics of Semiconductors - Proceedings of the 31st International Conference on the Physics of Semiconductors, ICPS 2012 |
| Pages | 377-378 |
| Number of pages | 2 |
| Publication status | Published - 1 Jan 2013 |
| Event | 31st International Conference on the Physics of Semiconductors, ICPS 2012 - Zurich, Switzerland Duration: 29 Jul 2012 → 3 Aug 2012 |
Publication series
| Name | AIP Conference Proceedings |
|---|---|
| Volume | 1566 |
| ISSN (Print) | 0094-243X |
| ISSN (electronic) | 1551-7616 |
Abstract
The influence of a magnetic field on Landau levels (LLs) in graphene-based devices is described via the magneto-optical response induced by terahertz (THz) radiation. For single-layer graphene, the resonance energies of the transitions between the on Landau levels (LLs) such as L1, L2 and L3 fit quite well to the terahertz spectral range at low magnetic fields. Also, the calculations for the terahertz photoresponse (photoconductivity) in the presence of low magnetic fields, the reported calculations for the scattering rate of LLs, recent and our experimental results of photoresponse measurements yield that single-layer graphene is suitable for the detection of terahertz radiation.
Keywords
- graphene, Landau levels, photoconductivity, terahertz
ASJC Scopus subject areas
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Physics of Semiconductors - Proceedings of the 31st International Conference on the Physics of Semiconductors, ICPS 2012. 2013. p. 377-378 (AIP Conference Proceedings; Vol. 1566).
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - Photoconductivity of graphene devices induced by terahertz radiation at various photon energies
AU - Salman, M.
AU - Gouider, F.
AU - Friedemann, M.
AU - Schmidt, H.
AU - Ahlers, F. J.
AU - Göthlich, M.
AU - Haug, R. J.
AU - Nachtwei, G.
PY - 2013/1/1
Y1 - 2013/1/1
N2 - The influence of a magnetic field on Landau levels (LLs) in graphene-based devices is described via the magneto-optical response induced by terahertz (THz) radiation. For single-layer graphene, the resonance energies of the transitions between the on Landau levels (LLs) such as L1, L2 and L3 fit quite well to the terahertz spectral range at low magnetic fields. Also, the calculations for the terahertz photoresponse (photoconductivity) in the presence of low magnetic fields, the reported calculations for the scattering rate of LLs, recent and our experimental results of photoresponse measurements yield that single-layer graphene is suitable for the detection of terahertz radiation.
AB - The influence of a magnetic field on Landau levels (LLs) in graphene-based devices is described via the magneto-optical response induced by terahertz (THz) radiation. For single-layer graphene, the resonance energies of the transitions between the on Landau levels (LLs) such as L1, L2 and L3 fit quite well to the terahertz spectral range at low magnetic fields. Also, the calculations for the terahertz photoresponse (photoconductivity) in the presence of low magnetic fields, the reported calculations for the scattering rate of LLs, recent and our experimental results of photoresponse measurements yield that single-layer graphene is suitable for the detection of terahertz radiation.
KW - graphene
KW - Landau levels
KW - photoconductivity
KW - terahertz
UR - http://www.scopus.com/inward/record.url?scp=84907379843&partnerID=8YFLogxK
U2 - 10.1063/1.4848443
DO - 10.1063/1.4848443
M3 - Conference contribution
AN - SCOPUS:84907379843
SN - 9780735411944
T3 - AIP Conference Proceedings
SP - 377
EP - 378
BT - Physics of Semiconductors - Proceedings of the 31st International Conference on the Physics of Semiconductors, ICPS 2012
T2 - 31st International Conference on the Physics of Semiconductors, ICPS 2012
Y2 - 29 July 2012 through 3 August 2012
ER -