Details
| Original language | English |
|---|---|
| Pages (from-to) | 304-307 |
| Number of pages | 4 |
| Journal | Journal of crystal growth |
| Volume | 157 |
| Issue number | 1-4 |
| Publication status | Published - Dec 1995 |
| Externally published | Yes |
Abstract
Donor-doping in silicon molecular beam epitaxy (MBE) is still an open problem, due to the low solid solubility and the strong segregation behavior (Sb,As) or to the high vapor pressure of the doping elements (P,As). Based on its high solubility, elemental P2 would be the best candidate for heavy n-type doping. A new source has been applied to incorporate electrically active phosphorus during growth higher than 1020 cm-3 in Si and SiGe. The incorporation probabilities into Si and strained SiGe will be compared. The dependence of segregation/diffusion processes of phosphorus on growth temperature during the MBE will be shown. No surface accumulation of phosphorus or gallium were observed. SIMS investigations on undoped Si layers reveal no P or Ga "memory effect" of the UHV equipment.
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Condensed Matter Physics
- Chemistry(all)
- Inorganic Chemistry
- Materials Science(all)
- Materials Chemistry
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In: Journal of crystal growth, Vol. 157, No. 1-4, 12.1995, p. 304-307.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Phosphorus doping in molecular beam epitaxial grown silicon and silicon/germanium using a GaP decomposition source
AU - Lippert, G.
AU - Osten, H. J.
AU - Krüger, D.
PY - 1995/12
Y1 - 1995/12
N2 - Donor-doping in silicon molecular beam epitaxy (MBE) is still an open problem, due to the low solid solubility and the strong segregation behavior (Sb,As) or to the high vapor pressure of the doping elements (P,As). Based on its high solubility, elemental P2 would be the best candidate for heavy n-type doping. A new source has been applied to incorporate electrically active phosphorus during growth higher than 1020 cm-3 in Si and SiGe. The incorporation probabilities into Si and strained SiGe will be compared. The dependence of segregation/diffusion processes of phosphorus on growth temperature during the MBE will be shown. No surface accumulation of phosphorus or gallium were observed. SIMS investigations on undoped Si layers reveal no P or Ga "memory effect" of the UHV equipment.
AB - Donor-doping in silicon molecular beam epitaxy (MBE) is still an open problem, due to the low solid solubility and the strong segregation behavior (Sb,As) or to the high vapor pressure of the doping elements (P,As). Based on its high solubility, elemental P2 would be the best candidate for heavy n-type doping. A new source has been applied to incorporate electrically active phosphorus during growth higher than 1020 cm-3 in Si and SiGe. The incorporation probabilities into Si and strained SiGe will be compared. The dependence of segregation/diffusion processes of phosphorus on growth temperature during the MBE will be shown. No surface accumulation of phosphorus or gallium were observed. SIMS investigations on undoped Si layers reveal no P or Ga "memory effect" of the UHV equipment.
UR - http://www.scopus.com/inward/record.url?scp=0029633684&partnerID=8YFLogxK
U2 - 10.1016/0022-0248(95)00337-1
DO - 10.1016/0022-0248(95)00337-1
M3 - Article
AN - SCOPUS:0029633684
VL - 157
SP - 304
EP - 307
JO - Journal of crystal growth
JF - Journal of crystal growth
SN - 0022-0248
IS - 1-4
ER -