Details
| Original language | English |
|---|---|
| Pages (from-to) | 23-29 |
| Number of pages | 7 |
| Journal | IEEE journal of photovoltaics |
| Volume | 8 |
| Issue number | 1 |
| Early online date | 2 Nov 2017 |
| Publication status | Published - Jan 2018 |
Abstract
We introduce a method for the quantification of perimeter recombination in solar cells based on infrared lifetime measurements. We apply this method at a 25.0%-efficient interdigitated back contact (IBC) silicon solar cell with passivating contacts. The implied pseudo-efficiency determined by infrared lifetime mapping is 26.2% at an intermediate process step. The 1.2%abs loss is attributed to a process-related reduction in surface passivation quality, recombination in the perimeter area, and series resistance. The 2×2 cm2-sized cell is processed on a 100mmwafer. We determine the implied pseudo-efficiency with illuminated and with shaded perimeter area during infrared lifetime mapping. The difference between both implied pseudo-efficiencies yields the efficiency loss by perimeter recombination, which is determined to be 0.4%abs for a wafer resistivity of 1.3 ω cm and even 0.9%abs for a wafer resistivity of 80 ω cm.
Keywords
- Charge carrier lifetime analysis, Passivating contacts, Perimeter recombination, Photovoltaic cells
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Electrical and Electronic Engineering
Sustainable Development Goals
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In: IEEE journal of photovoltaics, Vol. 8, No. 1, 01.2018, p. 23-29.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Perimeter recombination in 25%-efficient IBC solar cells with passivating POLO contacts for both polarities
AU - Haase, Felix
AU - Schäfer, Sören
AU - Klamt, Christina
AU - Kiefer, Fabian
AU - Krügener, Jan
AU - Brendel, Rolf
AU - Peibst, Robby
N1 - © 2017 IEEE.
PY - 2018/1
Y1 - 2018/1
N2 - We introduce a method for the quantification of perimeter recombination in solar cells based on infrared lifetime measurements. We apply this method at a 25.0%-efficient interdigitated back contact (IBC) silicon solar cell with passivating contacts. The implied pseudo-efficiency determined by infrared lifetime mapping is 26.2% at an intermediate process step. The 1.2%abs loss is attributed to a process-related reduction in surface passivation quality, recombination in the perimeter area, and series resistance. The 2×2 cm2-sized cell is processed on a 100mmwafer. We determine the implied pseudo-efficiency with illuminated and with shaded perimeter area during infrared lifetime mapping. The difference between both implied pseudo-efficiencies yields the efficiency loss by perimeter recombination, which is determined to be 0.4%abs for a wafer resistivity of 1.3 ω cm and even 0.9%abs for a wafer resistivity of 80 ω cm.
AB - We introduce a method for the quantification of perimeter recombination in solar cells based on infrared lifetime measurements. We apply this method at a 25.0%-efficient interdigitated back contact (IBC) silicon solar cell with passivating contacts. The implied pseudo-efficiency determined by infrared lifetime mapping is 26.2% at an intermediate process step. The 1.2%abs loss is attributed to a process-related reduction in surface passivation quality, recombination in the perimeter area, and series resistance. The 2×2 cm2-sized cell is processed on a 100mmwafer. We determine the implied pseudo-efficiency with illuminated and with shaded perimeter area during infrared lifetime mapping. The difference between both implied pseudo-efficiencies yields the efficiency loss by perimeter recombination, which is determined to be 0.4%abs for a wafer resistivity of 1.3 ω cm and even 0.9%abs for a wafer resistivity of 80 ω cm.
KW - Charge carrier lifetime analysis
KW - Passivating contacts
KW - Perimeter recombination
KW - Photovoltaic cells
UR - http://www.scopus.com/inward/record.url?scp=85034445019&partnerID=8YFLogxK
U2 - 10.1109/jphotov.2017.2762592
DO - 10.1109/jphotov.2017.2762592
M3 - Article
AN - SCOPUS:85034445019
VL - 8
SP - 23
EP - 29
JO - IEEE journal of photovoltaics
JF - IEEE journal of photovoltaics
SN - 2156-3381
IS - 1
ER -