Details
| Original language | English |
|---|---|
| Title of host publication | High Purity Silicon 9 |
| Publisher | Electrochemical Society, Inc. |
| Pages | 285-297 |
| Number of pages | 13 |
| Edition | 4 |
| ISBN (electronic) | 1566775043 |
| Publication status | Published - 2006 |
| Externally published | Yes |
| Event | High Purity Silicon 9 - 210th Electrochemical Society Meeting - Cancun, Mexico Duration: 29 Oct 2006 → 3 Nov 2006 |
Publication series
| Name | ECS Transactions |
|---|---|
| Number | 4 |
| Volume | 3 |
| ISSN (Print) | 1938-5862 |
| ISSN (electronic) | 1938-6737 |
Abstract
The energy conversion efficiency of solar cells fabricated from oxygen-containing crystalline silicon wafers with boron as p-type dopant is ultimately limited by boron-oxygen-related recombination centers which form under illumination or forward-biasinduced electron injection into the p-type base of the cell. This paper reviews the recent progress in understanding the physics of this degradation effect. It is shown that two different types of boronoxygen centers are simultaneously formed at very different formation rates. Electronic defect properties, formation mechanisms and the impact on device properties are discussed. copyright The Electrochemical Society.
ASJC Scopus subject areas
- Engineering(all)
- General Engineering
Cite this
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High Purity Silicon 9. 4. ed. Electrochemical Society, Inc., 2006. p. 285-297 (ECS Transactions; Vol. 3, No. 4).
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - Performance-limiting oxygen-related defects in silicon solar cells
AU - Schmidt, Jan
AU - Bothe, Karsten
PY - 2006
Y1 - 2006
N2 - The energy conversion efficiency of solar cells fabricated from oxygen-containing crystalline silicon wafers with boron as p-type dopant is ultimately limited by boron-oxygen-related recombination centers which form under illumination or forward-biasinduced electron injection into the p-type base of the cell. This paper reviews the recent progress in understanding the physics of this degradation effect. It is shown that two different types of boronoxygen centers are simultaneously formed at very different formation rates. Electronic defect properties, formation mechanisms and the impact on device properties are discussed. copyright The Electrochemical Society.
AB - The energy conversion efficiency of solar cells fabricated from oxygen-containing crystalline silicon wafers with boron as p-type dopant is ultimately limited by boron-oxygen-related recombination centers which form under illumination or forward-biasinduced electron injection into the p-type base of the cell. This paper reviews the recent progress in understanding the physics of this degradation effect. It is shown that two different types of boronoxygen centers are simultaneously formed at very different formation rates. Electronic defect properties, formation mechanisms and the impact on device properties are discussed. copyright The Electrochemical Society.
UR - http://www.scopus.com/inward/record.url?scp=33846947607&partnerID=8YFLogxK
U2 - 10.1149/1.2355764
DO - 10.1149/1.2355764
M3 - Conference contribution
AN - SCOPUS:33846947607
T3 - ECS Transactions
SP - 285
EP - 297
BT - High Purity Silicon 9
PB - Electrochemical Society, Inc.
T2 - High Purity Silicon 9 - 210th Electrochemical Society Meeting
Y2 - 29 October 2006 through 3 November 2006
ER -