Details
| Original language | English |
|---|---|
| Pages (from-to) | 3141-3144 |
| Number of pages | 4 |
| Journal | Physical review letters |
| Volume | 73 |
| Issue number | 23 |
| Publication status | Published - 1 Jan 1994 |
| Externally published | Yes |
Abstract
We investigate the transport properties of insulating phases in the 2D electron system of high-mobility AlGaAs/GaAs heterostructures of Corbino geometry at very low temperatures. We find that the nonlinear current-voltage characteristics for insulating phases in the integer and fractional quantum Hall regime and for a low-density insulating phase are very similar. The behavior of these characteristics with changing temperature and filling factor unambiguously points to the percolation metal-insulator transition as the cause for all insulating phases investigated. We propose a metal-insulator phase diagram in the (B,Ns) plane based on our experimental data.
ASJC Scopus subject areas
Cite this
- Standard
- Harvard
- Apa
- Vancouver
- BibTeX
- RIS
In: Physical review letters, Vol. 73, No. 23, 01.01.1994, p. 3141-3144.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Percolation metal-insulator transitions in the two-dimensional electron system of AlGaAs/GaAs heterostructures
AU - Shashkin, A. A.
AU - Dolgopolov, V. T.
AU - Kravchenko, G. V.
AU - Wendel, M.
AU - Schuster, R.
AU - Kotthaus, J. P.
AU - Haug, R. J.
AU - Von Klitzing, K.
AU - Ploog, K.
AU - Nickel, H.
AU - Schlapp, W.
PY - 1994/1/1
Y1 - 1994/1/1
N2 - We investigate the transport properties of insulating phases in the 2D electron system of high-mobility AlGaAs/GaAs heterostructures of Corbino geometry at very low temperatures. We find that the nonlinear current-voltage characteristics for insulating phases in the integer and fractional quantum Hall regime and for a low-density insulating phase are very similar. The behavior of these characteristics with changing temperature and filling factor unambiguously points to the percolation metal-insulator transition as the cause for all insulating phases investigated. We propose a metal-insulator phase diagram in the (B,Ns) plane based on our experimental data.
AB - We investigate the transport properties of insulating phases in the 2D electron system of high-mobility AlGaAs/GaAs heterostructures of Corbino geometry at very low temperatures. We find that the nonlinear current-voltage characteristics for insulating phases in the integer and fractional quantum Hall regime and for a low-density insulating phase are very similar. The behavior of these characteristics with changing temperature and filling factor unambiguously points to the percolation metal-insulator transition as the cause for all insulating phases investigated. We propose a metal-insulator phase diagram in the (B,Ns) plane based on our experimental data.
UR - http://www.scopus.com/inward/record.url?scp=0001761674&partnerID=8YFLogxK
U2 - 10.1103/PhysRevLett.73.3141
DO - 10.1103/PhysRevLett.73.3141
M3 - Article
AN - SCOPUS:0001761674
VL - 73
SP - 3141
EP - 3144
JO - Physical review letters
JF - Physical review letters
SN - 0031-9007
IS - 23
ER -