Details
| Original language | English |
|---|---|
| Pages (from-to) | 362-366 |
| Number of pages | 5 |
| Journal | Surface Science |
| Volume | 606 |
| Issue number | 3-4 |
| Publication status | Published - 29 Oct 2011 |
Abstract
In this paper, we give an example how domain walls (DW) within an adsorbed monolayer form one-dimensional localized electronic states. We investigated in detail the Ag3×3 phase on Si (111), a prototype system for a low dimensional electron gas, by means of scanning tunneling microscopy. The doubling of the periodicity along the DW-direction at low temperatures (80 K) suggests a metal-insulator transition of Peierls type. The superimposed intensity modulation in the direction across the DW can be interpreted in terms of lateral quantum well states. However, the simultaneous vanishing of both features at room temperature indicates more complicated changes in band structure and/or wave functions during the transition than described by the simple Peierls model.
Keywords
- Domain wall, Metal semiconductor interface, Peierls transition, STM
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Condensed Matter Physics
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Materials Science(all)
- Surfaces, Coatings and Films
- Materials Science(all)
- Materials Chemistry
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In: Surface Science, Vol. 606, No. 3-4, 29.10.2011, p. 362-366.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Peierls-like phase transitions in domain walls
AU - Schmeidel, Jedrzej
AU - Pfnür, Herbert
AU - Tegenkamp, Christoph
N1 - Funding information: We thank gratefully the Deutsche Forschungsgemeinschaft for financial support.
PY - 2011/10/29
Y1 - 2011/10/29
N2 - In this paper, we give an example how domain walls (DW) within an adsorbed monolayer form one-dimensional localized electronic states. We investigated in detail the Ag3×3 phase on Si (111), a prototype system for a low dimensional electron gas, by means of scanning tunneling microscopy. The doubling of the periodicity along the DW-direction at low temperatures (80 K) suggests a metal-insulator transition of Peierls type. The superimposed intensity modulation in the direction across the DW can be interpreted in terms of lateral quantum well states. However, the simultaneous vanishing of both features at room temperature indicates more complicated changes in band structure and/or wave functions during the transition than described by the simple Peierls model.
AB - In this paper, we give an example how domain walls (DW) within an adsorbed monolayer form one-dimensional localized electronic states. We investigated in detail the Ag3×3 phase on Si (111), a prototype system for a low dimensional electron gas, by means of scanning tunneling microscopy. The doubling of the periodicity along the DW-direction at low temperatures (80 K) suggests a metal-insulator transition of Peierls type. The superimposed intensity modulation in the direction across the DW can be interpreted in terms of lateral quantum well states. However, the simultaneous vanishing of both features at room temperature indicates more complicated changes in band structure and/or wave functions during the transition than described by the simple Peierls model.
KW - Domain wall
KW - Metal semiconductor interface
KW - Peierls transition
KW - STM
UR - http://www.scopus.com/inward/record.url?scp=84855431191&partnerID=8YFLogxK
U2 - 10.1016/j.susc.2011.10.019
DO - 10.1016/j.susc.2011.10.019
M3 - Article
AN - SCOPUS:84855431191
VL - 606
SP - 362
EP - 366
JO - Surface Science
JF - Surface Science
SN - 0039-6028
IS - 3-4
ER -