Details
| Original language | English |
|---|---|
| Pages (from-to) | 838-840 |
| Number of pages | 3 |
| Journal | Applied physics letters |
| Volume | 68 |
| Issue number | 6 |
| Publication status | Published - 1 Dec 1996 |
| Externally published | Yes |
Abstract
Resonant tunneling through small double-barrier heterostructures is investigated in dependence of the charge accumulation in the quantum well and the device diameter. The study comprises a series of resonant-tunneling diodes with four different barrier-thickness ratios and diameters between 300 nm and 10 μm. Special emphasis lies on the peak-to-valley ratio of the resonant-tunneling current peaks, which drops drastically with decreasing device diameter for weak electron accumulation, while it is size independent in the strong-charging case.
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Physics and Astronomy (miscellaneous)
Cite this
- Standard
- Harvard
- Apa
- Vancouver
- BibTeX
- RIS
In: Applied physics letters, Vol. 68, No. 6, 01.12.1996, p. 838-840.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Peak-to-valley ratio of small resonant-tunneling diodes with various barrier-thickness asymmetries
AU - Schmidt, T.
AU - Tewordt, M.
AU - Haug, R. J.
AU - Klitzing, K. V.
AU - Schönherr, B.
AU - Grambow, P.
AU - Förster, A.
AU - Lüth, H.
PY - 1996/12/1
Y1 - 1996/12/1
N2 - Resonant tunneling through small double-barrier heterostructures is investigated in dependence of the charge accumulation in the quantum well and the device diameter. The study comprises a series of resonant-tunneling diodes with four different barrier-thickness ratios and diameters between 300 nm and 10 μm. Special emphasis lies on the peak-to-valley ratio of the resonant-tunneling current peaks, which drops drastically with decreasing device diameter for weak electron accumulation, while it is size independent in the strong-charging case.
AB - Resonant tunneling through small double-barrier heterostructures is investigated in dependence of the charge accumulation in the quantum well and the device diameter. The study comprises a series of resonant-tunneling diodes with four different barrier-thickness ratios and diameters between 300 nm and 10 μm. Special emphasis lies on the peak-to-valley ratio of the resonant-tunneling current peaks, which drops drastically with decreasing device diameter for weak electron accumulation, while it is size independent in the strong-charging case.
UR - http://www.scopus.com/inward/record.url?scp=0039868969&partnerID=8YFLogxK
U2 - 10.1063/1.116550
DO - 10.1063/1.116550
M3 - Article
AN - SCOPUS:0039868969
VL - 68
SP - 838
EP - 840
JO - Applied physics letters
JF - Applied physics letters
SN - 0003-6951
IS - 6
ER -