Details
| Original language | English |
|---|---|
| Pages (from-to) | 199-204 |
| Number of pages | 6 |
| Journal | Energy Procedia |
| Volume | 92 |
| Publication status | Published - 1 Aug 2016 |
| Event | 6th International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2016 - Chambery, France Duration: 7 Mar 2016 → 9 Mar 2016 |
Abstract
We investigate the optical properties of n- and p-type polycrystalline silicon (poly-Si) layers. We determine the optical constants n and k of the complex refractive index of polycrystalline silicon by using variable-angle spectroscopic ellipsometry. Moreover, we investigate the effect of different doping levels in the poly-Si on free carrier absorption (FCA). Thereby, we demonstrate that the FCA in poly-Si can be described by a model developed for crystalline silicon (c-Si) at a first approximation. The optical properties of hydrogenated amorphous silicon layers (a-Si:H) are also investigated as a reference. With ray tracing simulations the absorption losses of poly-Si and of the a-Si:H layers are quantified with respect to the film thickness. Based on this approach we find that the short-circuit current density losses due to parasitic absorption of poly-Si layers are significantly lower when compared to a-Si:H layers of the same thickness. For example the short-circuit current density loss due to a 20 nm thick p-type poly-Si layer is around 1.1 mA/cm2, whereas a 20 nm thick p-type a-Si:H layer leads to a loss of around 3.5 mA/cm2.
Keywords
- front junction, optical properties, Polycrystalline silicon, ray tracing simulations
ASJC Scopus subject areas
- Energy(all)
- General Energy
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In: Energy Procedia, Vol. 92, 01.08.2016, p. 199-204.
Research output: Contribution to journal › Conference article › Research › peer review
}
TY - JOUR
T1 - Parasitic Absorption in Polycrystalline Si-layers for Carrier-selective Front Junctions
AU - Reiter, Sina
AU - Koper, Nico
AU - Reineke-Koch, Rolf
AU - Larionova, Yevgeniya
AU - Turcu, Mircea
AU - Krügener, Jan
AU - Tetzlaff, Dominic
AU - Wietler, Tobias
AU - Höhne, Uwe
AU - Kähler, Jan Dirk
AU - Brendel, Rolf
AU - Peibst, Robby
PY - 2016/8/1
Y1 - 2016/8/1
N2 - We investigate the optical properties of n- and p-type polycrystalline silicon (poly-Si) layers. We determine the optical constants n and k of the complex refractive index of polycrystalline silicon by using variable-angle spectroscopic ellipsometry. Moreover, we investigate the effect of different doping levels in the poly-Si on free carrier absorption (FCA). Thereby, we demonstrate that the FCA in poly-Si can be described by a model developed for crystalline silicon (c-Si) at a first approximation. The optical properties of hydrogenated amorphous silicon layers (a-Si:H) are also investigated as a reference. With ray tracing simulations the absorption losses of poly-Si and of the a-Si:H layers are quantified with respect to the film thickness. Based on this approach we find that the short-circuit current density losses due to parasitic absorption of poly-Si layers are significantly lower when compared to a-Si:H layers of the same thickness. For example the short-circuit current density loss due to a 20 nm thick p-type poly-Si layer is around 1.1 mA/cm2, whereas a 20 nm thick p-type a-Si:H layer leads to a loss of around 3.5 mA/cm2.
AB - We investigate the optical properties of n- and p-type polycrystalline silicon (poly-Si) layers. We determine the optical constants n and k of the complex refractive index of polycrystalline silicon by using variable-angle spectroscopic ellipsometry. Moreover, we investigate the effect of different doping levels in the poly-Si on free carrier absorption (FCA). Thereby, we demonstrate that the FCA in poly-Si can be described by a model developed for crystalline silicon (c-Si) at a first approximation. The optical properties of hydrogenated amorphous silicon layers (a-Si:H) are also investigated as a reference. With ray tracing simulations the absorption losses of poly-Si and of the a-Si:H layers are quantified with respect to the film thickness. Based on this approach we find that the short-circuit current density losses due to parasitic absorption of poly-Si layers are significantly lower when compared to a-Si:H layers of the same thickness. For example the short-circuit current density loss due to a 20 nm thick p-type poly-Si layer is around 1.1 mA/cm2, whereas a 20 nm thick p-type a-Si:H layer leads to a loss of around 3.5 mA/cm2.
KW - front junction
KW - optical properties
KW - Polycrystalline silicon
KW - ray tracing simulations
UR - http://www.scopus.com/inward/record.url?scp=85014492780&partnerID=8YFLogxK
U2 - 10.1016/j.egypro.2016.07.057
DO - 10.1016/j.egypro.2016.07.057
M3 - Conference article
AN - SCOPUS:85014492780
VL - 92
SP - 199
EP - 204
JO - Energy Procedia
JF - Energy Procedia
SN - 1876-6102
T2 - 6th International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2016
Y2 - 7 March 2016 through 9 March 2016
ER -